V V Korenev

Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.

Gain compression and its dependence on output power in quantum dot lasers

The gain compression coefficient was evaluated by applying the frequency modulation/amplitude modulation technique in a distributed feedback InAs/InGaAs quantum dot laser. A strong dependence of the gain compression coefficient on the output power was found. Our analysis of the gain compression within the frame of the modified well-barrier hole burning model reveals that the gain compression coefficient decreases beyond the lasing threshold, which is in a good agreement with the experimental observations.

Quantum dot lasers and relevant nanoheterostructures

Spectral and power characteristics of QD stripe lasers operating in two-state lasing regime have been studied in a wide range of operation conditions. It was demonstrated that neither self-heating nor increase of the homogeneous broadening are responsible for quenching of the ground-state lasing beyond the two-state lasing threshold. It was found that difference in electron and hole capture rates strongly affects light-current curve. Modulation p-type doping is shown to enhance the peak power of GS lasing transition. Microring and microdisk structures (D = 4-9 μm) comprising 1.3 μm InAs/InGaAs quantum dots have been fabricated and studied by μ-PL and NSOM. Ground-state lasing was achieved well above root temperature (up to 380 K). Effect of inner diameter on threshold characteristics was evaluated.

The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers

Two-state lasing in devices based on undoped and p-type modulation-doped InAs/InGaAs quantum dots is studied for various cavity lengths and temperatures. Modulation doping of the active region strongly enhances the threshold current of two-state lasing, preserves ground-state lasing up to higher temperatures and increases ground-state output power. The impact of modulation doping is especially strong in short cavities.

Simultaneous multi-state stimulated emission in quantum dot lasers: experiment and analytical approach

The theoretical investigation of the double-state lasing phenomena in InAs/InGaAs quantum dot lasers has been carried out. The new mechanism of the ground-state lasing quenching, which takes place in quantum dot (QD) laser operating in double-state lasing regime at high pump level, was proposed. The difference between electron and hole capture rates causes the depletion of the hole levels and consequently leads to the decrease of an output lasing power via QD ground state with the growth of injection. Moreover, it was shown that the hole-to-electron capture rates ratio strongly affects both the light-current curve and the key laser parameters. The model of the simultaneous lasing through the ground and excited QD states was developed which allows to describe the observed quenching quantitatively.

Waveguide and active region structure optimization for low-divergence InAs/InGaAs quantum dot comb lasers

Ways to improve beam divergence and energy consumption of quantum dot lasers emitting via the ground-state optical transitions by optimization of the key parameters of laser active region are discussed. It is shown that there exist an optimal cavity length, dispersion of inhomogeneous broadening and number of QD layers in active region allowing to obtain lasing spectrum of a given width at minimum injection current. The planar dielectric waveguide of the laser is optimized by analytical means for a better trade-off between high Γ-factor and low beam divergence.

The analytical approach to the multi-state lasing phenomenon in undoped and p-doped InAs/InGaAs semiconductor quantum dot lasers

We introduce an analytical approach to the multi-state lasing phenomenon in p-doped and undoped InAs/InGaAs quantum dot lasers which were studied both theoretically and experimentally. It is shown that the asymmetry in charge carrier distribution in quantum dots as well as hole-to-electron capture rate ratio jointly determine laser’s behavior in such a regime. If the ratio is lower than a certain critical value, the complete quenching of ground-state lasing takes place at sufficiently high injection currents; at higher values of the ratio, our model predicts saturation of the ground-state power. It was experimentally shown that the modulation p-doping of laser’s active region results in increase of output power emitted via the ground-state optical transitions of quantum dots and in enhancement of the injection currents range in which multi-state lasing takes place. The maximum temperature at which multi-state lasing exists was increased by about 50°C in the p-doped samples. These effects are qualitatively explained in the terms of the proposed model.

The Influence of Carrier Dynamics on Double-State Lasing in Quantum Dot Lasers at Variable Temperature

It is shown in analytical form that the carrier capture from the matrix as well as carrier dynamics in quantum dots plays an important role in double-state lasing phenomenon. In particular, the de-synchronization of hole and electron captures allows one to describe recently observed quenching of ground-state lasing, which takes place in quantum dot lasers operating in double-state lasing regime at high injection. From the other side, the detailed analysis of charge carrier dynamics in the single quantum dot enables one to describe the observed light-current characteristics and key temperature dependences.