V. Yu. Bondarev

SCANNING E-BEAM LONGITUDINALLY PUMPED RT OPERABLE LASER BASED ON MOVPE-GROWN GaInP/AlGaInP MQW STRUCTURE

The 17- and 25-period Ga0.5In0.5P/(Al0.7Ga0.3)0.5In0.5P quantum well structures were grown by metalorganic vapor phase epitaxy on a GaAs substrate misoriented by 10° from (001) to (111)A. A microcavity with dielectric oxide mirrors was fabricated on the basis of each structure. Lasing at 619 nm (632 nm) with 0.7 W (6 W) output power was achieved under scanning electron beam longitudinal pumping at room temperature using the 17-period (25-period) structure. The threshold current density at a 40 keV electron energy was 8 A/cm2. It is shown that low threshold and high power lasing requires the position of the QWs to coincide with the antinodes of the cavity mode, at the maximum of the gain spectrum due to the QW ground state.

E-beam pumped GaInP/AlGaInP MQW VCSEL

A 17-period Ga/sub 0.5/In/sub 0.5/P/(Al/sub 0.7/Ga/sub 0.3/)/sub 0.5/In/sub 0.5/P quantum well structure was grown by metalorganic vapor phase epitaxy on a GaAs substrate misoriented by 10/spl deg/ from [001] to [111]A. A microcavity with dielectric oxide mirrors was fabricated on the basis of this structure. Lasing at 619 nm with 0.7 W output power was achieved under scanning electron beam longitudinal pumping at room temperature. It is shown that low threshold lasing requires the position of the QWs to coincide with the antinodes of the cavity mode, at the maximum of the gain spectrum due to the QW ground state.

Limiting parameters of high-power single-stripe laser diodes in the range of 800–808 nm in the pulsed mode

Experimental results on the study of the output parameters of high-power continuous-wave (cw) laser diodes operating in the pulsed mode and the results of numerical simulation of the total efficiency of laser diodes with cavity lengths of 3 and 4 mm in a wide range of pump currents are presented. The spectral parameters of the high-power laser diodes are studied at various pulse-repetition rates. The possible causes of the limited output power in the pulsed mode are discussed.

High-power laser diodes of the spectral region of 808 nm and 980 nm

A technique for assembling high-power laser diodes emitting at 808 and 980 nm was developed, which stably provides high radiation parameters when using one of the standard types of heat sinks for assembling high-power laser diodes, i.e., the C-mount. The maximum achievable power of laser diodes with a stripe contact width of 150 µm in the cw lasing mode was 25 W at a temperature of 20 °C.

E-BEAM PUMPED VCSEL ON MOVPE-GROWN HEXAGONAL CdSSe/CdS MQW STRUCTURE

The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12–16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535–590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.

E-beam longitudinal pumped laser on MOVPE-grown hexagonal CdSSe/CdS MQW structure

En CdSSe/CdS multi quantum well structures were grown by metalorganic vapor phase epitaxy (MOVPE) on a CdS substrate misoriented by 12−15o from (0001) towards (1010). Microcavities with dielectric oxide mirrors were fabricated on the basis of these structures. Lasing in the 535−590 nm spectral range was achieved on different structures under longitudinal electron beam pumping at room temperature. The relatively high threshold of the laser and the blueshift from the spontaneous emission peak to lasing wavelength were explained by taking into account the type−II band alignment of the active region.