Václav Petrák

Growth and characterization of nanodiamond layers prepared using the plasma-enhanced linear antennas microwave CVD system

Industrial applications of plasma-enhanced chemical vapour deposition (CVD) diamond grown on large area substrates, 3D shapes, at low substrate temperatures and on standard engineering substrate materials require novel plasma concepts. Based on the pioneering work of the group at AIST in Japan, the high-density coaxial delivery type of plasmas has been explored (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337–46). However, an important challenge is to obtain commercially interesting growth rates at very low substrate temperatures. In this work we introduce the concept of novel linear antenna sources, designed at Leybold Optics Dresden, using high-frequency pulsed MW discharge with a high plasma density. This type of pulse discharges leads to the preparation of nanocrystalline diamond (NCD) thin films, compared with ultra-NCD thin films prepared in (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337–46). We present optical emission spectroscopy data for the CH4–CO2–H2 gas chemistry and we discuss the basic properties of the NCD films grown.

Increased Charge Storage Capacity of Titanium Nitride Electrodes by Deposition of Boron-doped Nanocrystalline Diamond Films

The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.

Experimental measurement of the diamond nucleation landscape reveals classical and nonclassical features

Significance Nucleation is the limiting step for thermodynamic phase transitions. While classical models predict that nucleation should be extremely rare, nucleation is surprisingly rapid in the gas-phase synthesis of diamond, silicon, and other industrial materials. We developed an approach for measuring nucleation landscapes using atomically defined precursors and find that diamond critical nuclei contain no bulk atoms, which leads to a nucleation barrier that is four orders of magnitude lower than prior bulk estimations. Our findings suggest that metastable molecular precursors play a key role in lowering nucleation barriers during materials synthesis and provide quantitative support for recent theoretical proposals of multistep nucleation pathways with much lower barriers than the predictions of classical nucleation theory. Nucleation is a core scientific concept that describes the formation of new phases and materials. While classical nucleation theory is applied across wide-ranging fields, nucleation energy landscapes have never been directly measured at the atomic level, and experiments suggest that nucleation rates often greatly exceed the predictions of classical nucleation theory. Multistep nucleation via metastable states could explain unexpectedly rapid nucleation in many contexts, yet experimental energy landscapes supporting such mechanisms are scarce, particularly at nanoscale dimensions. In this work, we measured the nucleation energy landscape of diamond during chemical vapor deposition, using a series of diamondoid molecules as atomically defined protonuclei. We find that 26-carbon atom clusters, which do not contain a single bulk atom, are postcritical nuclei and measure the nucleation barrier to be more than four orders of magnitude smaller than prior bulk estimations. These data support both classical and nonclassical concepts for multistep nucleation and growth during the gas-phase synthesis of diamond and other semiconductors. More broadly, these measurements provide experimental evidence that agrees with recent conceptual proposals of multistep nucleation pathways with metastable molecular precursors in diverse processes, ranging from cloud formation to protein crystallization, and nanoparticle synthesis.

Fluorescent Nanodiamonds: Effect of Surface Termination

It has been reported that physico-chemical properties of diamond surfaces are closely related to the surface chemisorbed species on the surface. Hydrogen chemisorption on a chemical vapor deposition grown diamond surface is well-known to be important for stabilizing diamond surface structures with sp 3 hybridization. It has been suggested that an H-chemisorbed structure is necessary to provide a negative electron affinity condition on the diamond surfaces. Negative electron affinity condition could change to a positive electron affinity by oxidation of the Hchemisorbed diamond surfaces. Oxidized diamond surfaces usually show characteristics completely different from those of the H-chemisorbed diamond surfaces. The unique electron affinity condition, or the surface potential, is strongly related to the chemisorbed species on diamond surfaces. The relationship between the surface chemisorption structure and the surface electrical properties, such as the surface potential of the diamond, has been modelled using DFT based calculations.