Vaidotas Miseikis

Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor

In this work we present a simple pathway to obtain large single-crystal graphene on copper (Cu) foils with high growth rates using a commercially available cold-wall chemical vapour deposition (CVD) reactor. We show that graphene nucleation density is drastically reduced and crystal growth is accelerated when: (i) using ex situ oxidized foils; (ii) performing annealing in an inert atmosphere prior to growth; (iii) enclosing the foils to lower the precursor impingement flux during growth. Growth rates as high as 14.7 and 17.5 μm min−1 are obtained on flat and folded foils, respectively. Thus, single-crystal grains with lateral size of about 1 mm can be obtained in just 1 h. The samples are characterized by optical microscopy, scanning electron microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy as well as selected area electron diffraction and low-energy electron diffraction, which confirm the high quality and homogeneity of the films. The development of a process for the quick production of large grain graphene in a commonly used commercial CVD reactor is a significant step towards an increased accessibility to millimetre-sized graphene crystals.

Acoustically induced current flow in graphene

We demonstrate the directed control of charge carriers in graphene using the electric field that accompanies the propagation of surface acoustic waves (SAWs) on a piezoelectric surface. Graphene grown by chemical vapor deposition was transferred to the surface of lithium niobate, allowing its direct integration with interdigital transducers used for SAW generation and detection. Radio frequency (RF) signal applied to the transducers at their resonant frequency was found to generate a direct current flow by the transport of p-type charge carriers. The acoustically induced current scales linearly with the applied RF power and can be observed even in presence of a counter-flow current induced by an applied bias.

Increasing the active surface of titanium islands on graphene by nitrogen sputtering

Titanium-island formation on graphene as a function of defect density is investigated. When depositing titanium on pristine graphene, titanium atoms cluster and form islands with an average diameter of about 10nm and an average height of a few atomic layers. We show that if defects are introduced in the graphene by ion bombardment, the mobility of the deposited titanium atoms is reduced and the average diameter of the islands decreases to 5nm with monoatomic height. This results in an optimized coverage for hydrogen storage applications since the actual titanium surface available per unit graphene area is significantly increased.

Magneto-optic transmittance modulation observed in a hybrid graphene–split ring resonator terahertz metasurface

By placing a material in close vicinity of a resonant optical element, its intrinsic optical response can be tuned, possibly to a wide extent. Here, we show that a graphene monolayer, spaced a few tenths of nanometers from a split ring resonator metasurface, exhibits a magneto-optical response which is strongly influenced by the presence of the metasurface itself. This hybrid system holds promises in view of thin optical modulators, polarization rotators, and nonreciprocal devices, in the technologically relevant terahertz spectral range. Moreover, it could be chosen as the playground for investigating the cavity electrodynamics of Dirac fermions in the quantum regime.

THz saturable absorption in turbostratic multilayer graphene on silicon carbide.

We investigated the room-temperature Terahertz (THz) response as saturable absorber of turbostratic multilayer graphene grown on the carbon-face of silicon carbide. By employing an open-aperture z-scan method and a 2.9 THz quantum cascade laser as source, a 10% enhancement of transparency is observed. The saturation intensity is several W/cm2, mostly attributed to the Pauli blocking effect in the intrinsic graphene layers. A visible increase of the modulation depth as a function of the number of graphene sheets was recorded as consequence of the low nonsaturable losses. The latter in turn revealed that crystalline disorder is the main limitation to larger modulations, demonstrating that the THz nonlinear absorption properties of turbostratic graphene can be engineered via a proper control of the crystalline disorder and the layers number.

UV Light Detection from CdS Nanocrystal Sensitized Graphene Photodetectors at kHz Frequencies

We have fabricated UV-sensitive photodetectors based on colloidal CdS nanocrystals and graphene. The nanocrystals act as a sensitizer layer that improves light harvesting leading to high responsivity of the detector. Despite the slow relaxation of the photogenerated charges in the nanocrystal film, faster processes allowed to detect pulses up to a repetition rate of 2 kHz. We have performed time-resolved analysis of the processes occurring in our hybrid system and discuss possible photoinduced charge transfer mechanisms.

Scalable synthesis of WS2 on graphene and h-BN: an all-2D platform for light-matter transduction*

By exhibiting a measurable bandgap and exotic valley physics, atomically thick tungsten disulfide (WS2) offers exciting prospects for optoelectronic applications. The synthesis of continuous WS2 films on other two-dimensional (2D) materials would greatly facilitate the implementation of novel all-2D photoactive devices. In this work we demonstrate the scalable growth of WS2 on graphene and hexagonal boron nitride (h-BN) via a chemical vapor deposition approach. Spectroscopic and microscopic analysis reveal that the film is bilayer-thick, with local monolayer inclusions. Photoluminescence measurements show a remarkable conservation of polarization at room temperature peaking 74% for the entire WS2 film. Furthermore, we present a scalable bottom-up approach for the design of photoconductive and photoemitting patterns.

Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth

Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-compatible processes. For future application in next generation devices the accurate control over the properties of high-quality graphene synthesized on Ge surfaces, such as number of layers and domain size, is of paramount importance. Here we investigate the role of the process gas flows on the CVD growth of graphene on Ge(100). The quality and morphology of the deposited material is assessed by using μ-Raman spectroscopy, X-ray photoemission spectroscopy, scanning electron microscopy, and atomic force microscopy. We find that by simply varying the carbon precursor flow different growth regimes yielding to graphene nanoribbons, graphene monolayer, and graphene multilayer are established. We identify the growth conditions yielding to a layer-by-layer growth regime and report on the achievement of homogeneous monolayer graphene with an average intensity ratio of 2D and G bands in the Raman map larger than 3.

Coherent absorption of light by graphene and other optically conducting surfaces in realistic on-substrate configurations

Analytical formulas are derived describing the coherent absorption of light from a realistic multilayer structure composed by an optically conducting surface on a supporting substrate. The model predicts two fundamental results. First, the absorption regime named coherent perfect transparency theoretically can always be reached. Second, the optical conductance of the surface can be extrapolated from absorption experimental data even when the substrate thickness is unknown. The theoretical predictions are experimentally verified by analyzing a multilayer graphene structure grown on a silicon carbide substrate. The graphene thickness estimated through the coherent absorption technique resulted in good agreement with the values obtained by two other spectroscopic techniques. Thanks to the high spatial resolution that can be reached and high sensitivity to the probed structure thickness, coherent absorption spectroscopy represents an accurate and non-destructive diagnostic method for the spatial mapping of th...

Revealing the Multibonding State between Hydrogen and Graphene-Supported Ti Clusters

Hydrogen adsorption on graphene-supported metal clusters has brought much controversy due to the complex nature of the bonding between hydrogen and metal clusters. The bond types of hydrogen and graphene-supported Ti clusters are experimentally and theoretically investigated. Transmission electron microscopy shows that Ti clusters of nanometer size are formed on graphene. Thermal desorption spectroscopy captures three hydrogen desorption peaks from hydrogenated graphene-supported Ti clusters. First-principles calculations also found three types of interaction: two types of bonds with different partial ionic character and physisorption. The physical origin for this rests on the charge state of the Ti clusters: when Ti clusters are neutral, H2 is dissociated, and H forms bonds with the Ti cluster. On the contrary, H2 is adsorbed in molecular form on positively charged Ti clusters, resulting in physisorption. Thus, this work clarifies the bonding mechanisms of hydrogen on graphene-supported Ti clusters.