Vaishali Patil

Chemically Deposited Sb2Se3 Anode for Thin Film Lithium Batteries

Sb2Se3, an important member of V2VI3 compound semiconductor, is a layer-structured semiconductor of orthorhombic crystal structure which exhibits good photo-voltaic properties and high thermoelectric power (TEP) which makes it to possess promising applications in photo-chemical devices, optical and thermoelectric cooling devices, decorative coatings and solar selective. However, there is no report on the electrochemical properties of Sb2Se3 as thin film anode in rechargeable lithium battery.

Structural, compositional and electrochemical properties of Aluminium-Silicon-Chromium alloy thin film as anode for Lithium thin film battery

In recent years, many new materials have been investigated in order to meet the need of high energy density for thin film batteries. Silicon based anode materials are attracting wide attention because of the highest theoretical capacity. By using DC magnetron sputtering method Aluminium film was deposited on ceramic substrate which acts as a current collector. Nanocrystalline film of Aluminium-Silicon-Chromium(Al-Si-Cr) alloy was deposited on aluminum film by using same sputtering method. High purity Aluminium-Silicon- Chromium metal alloy sputtering target was used for the film deposition. For comparison of anode cycling performance, pure Silicon thin films were also prepared by using same sputtering method. Al-Si-Cr films were analysed by XRD, EDAX, AFM and SEM . The crystallite size was determined by FWHM of XRD peaks. Particle size and microstructure of the film have been studied by SEM and AFM. The Al-Si-Cr thin film composition was analysed by EDAX. Composition ratio between Aluminium Silicon and Chromium obtained by EDAX is 2:3:5. Electrochemical properties of the films were analyzed by preparing lithium battery cell. Lithium insertion and excretion was performed by Cyclic Voltametry.

Thickness dependent properties of nanocryastalline Sb 2 S 3 electrode

Sb2S3 thin films of different thickness have been prepared by chemical bath deposition method using bismuth nitrate and thioacetamide in an aqueous medium. Films were deposited onto ordinary as well as FTO coated glass substrates. The photoelectrochemical (PEC) cell configuration was n-Sb2S3 / 0.25 M NaOH-0.25 Na2S -0.25 MS/C. From the current -voltage and capacitance -voltage plots, it is concluded that the photovoltaic output characteristics increases with increasing the thickness of the Sb2S3 thin films. Grain size increased with the film thickness which is confirmed by XRD and SEM. Electrical conductivity and thermoelectric power (TEP) measurements have been carried out in 300-500 K temperature range. The conduction activation energy is found to be thickness dependent. TEP measurements shows n-type conduction. Carrier concentration increased with thickness.