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Dive into the research topics where Vasil Vorsa is active.

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Featured researches published by Vasil Vorsa.


Applied Optics | 2005

Quantitative absorption spectroscopy of residual water vapor in high-purity gases: pressure broadening of the 1.39253-μm H 2 O transition by N 2 , HCl, HBr, Cl 2 , and O 2

Vasil Vorsa; Seksan Dheandhanoo; Suhas Narayan Ketkar; Joseph T. Hodges

We determined the respective pressure-broadening coefficients of HCl, HBr, Cl2, and O2 (expressed relative to that of the reference gas N2) for the (v1,v2,v3)J(Ka,Kc) = (0,0,0)3(0,3) --> (1,0,1)2(0,2) rovibrational transition of H2 16O that occurs at 1.39253 microm. The experiment used a continuous-wave cavity ring-down spectroscopy analyzer to measure the peak absorption losses as a function of added moisture concentration. The measured pressure-broadening coefficients for HCl, HBr, Cl2, and O2 are, respectively, 2.76, 2.48, 1.39, and 0.49 times that of the N2 pressure-broadening coefficient, and detection limits for water vapor range from 0.22 nmol mol(-1) for O2 matrix gas to 2.3 nmol mol(-1) for HBr matrix gas. The degradation of the detection limit (relative to the N2 matrix gas) is ascribed to a pressure-broadening-induced reduction in peak absorption cross section and to elevated background loss from the matrix gas.


Archive | 2008

METHODS FOR IN-SITU CHAMBER CLEANING PROCESS FOR HIGH VOLUME MANUFACTURE OF SEMICONDUCTOR MATERIALS

Chantal Arena; Christiaan Werkhoven; Ronald Thomas Bertram; Andrew David Johnson; Vasil Vorsa; Robert Gordon Ridgeway; Peter James Maroulis


Archive | 2008

Thermal etch process for cleaning CVD chambers

Andrew David Johnson; Peter James Maroulis; Vasil Vorsa; Robert Gordon Ridgeway


Archive | 2009

Amino Vinylsilane Precursors for Stressed SiN Films

Vasil Vorsa; Andrew David Johnson; Manchao Xiao


Archive | 2009

AMINO VINYLSILANE PRECURSOR FOR STRESSED SiN FILM

Andrew David Johnson; Vasil Vorsa; Manchao Xiao; デイビッド ジョンソン アンドリュー; ボーサ バシル; シャオ マンチャオ


Archive | 2012

Method using amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films

Vasil Vorsa; Andrew David Johnson; Manchao Xiao


Archive | 2009

Amino vinylsilane precursors for compressively stressed SiN films

Vasil Vorsa; Andrew David Johnson; Manchao Xiao


Archive | 2009

Aminovinylsilan-Ausgangsstoffe für die Abscheidung von SiN-Filmen mit intrinsischer Druckspannung

Andrew David Johnson; Vasil Vorsa; Manchao Xiao


Archive | 2009

Auf uv basierende überwachung und regelung von chlorid in einem gasstrom

Ronald Thomas Bertram; Chantal Arena; Christiaan Werkhoven; Michael Albert Tischler; Vasil Vorsa; Andrew David Johnson


Archive | 2009

Aminovinylsilan-Ausgangsvebindungen für druckgespannte SiN-Filme

Vasil Vorsa; Andrew David Johnson; Manchao Xiao

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Joseph T. Hodges

National Institute of Standards and Technology

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