Vasiliy Ostroumov

New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser

Diode pumped frequency doubled Optically Pumped Semiconductor lasers (OPS), has proven to be a reliable source of laser radiation in the blue and blue-green spectral range between 460 nm and 505 nm. One of the major advantages of using semiconductors as gain medium is the possibility to tailor the wavelength of the semiconductor material by means of band gap engineering. Here we report about new OPS material enabling the wavelength region between 1090 nm and 1160 nm which allows the realization of frequency doubled lasers between 545 nm and 580 nm. Laser results up to several Watts in the yellow spectral range as well as efficiency and lifetime data will be presented.

UV generation by intracavity frequency doubling of an OPS-pumped Pr:YLF laser with 500 mW of cw power at 360 nm

In this paper, we report on 500 mW of cw ultraviolet radiation at 360 nm, which has been obtained by intracavity frequency doubling of a Pr:YLF laser, end pumped by 1.8 W Coherent High Power OPS Laser at 479 nm. We have demonstrated the scalability of Pr:YLF laser to pump power of 5.3Watts, resulting in real continuous wave 2.5 Watts of output power at 720 nm and cw 1.3 Watts at 360 nm.

1 W of 261 nm cw generation in a Pr3+:LiYF4 laser pumped by an optically pumped semiconductor laser at 479 nm

The lack of blue pump sources for Pr-doped materials has been overcome with the recent progress in optically pumped semiconductor lasers (OPS) operating at 479 nm. The availability of reliable high power OPS pump lasers, makes Pr3+-doped crystals ideal gain media for compact and efficient ultraviolet solid-state lasers with output power in the Watt range. We report on the scalability of a 522/261 nm Pr:YLF cw laser that is dual-end-pumped by two OPS lasers at 479 nm. At 9.6 W of incident pump power more than 4 W were obtained at 522 nm with a slope efficiency of 45%. Intracavity frequency doubling of 522 nm resulted in 1 Watt of cw UV output at 261 nm.

Optically pumped semiconductor lasers: a new reliable technique for realizing highly efficient visible lasers

Optically pumped semiconductor material is a complimentary gain medium for rare earth or transition metal doped crystals. The design of several compositions based on GaAs allows the realization of a wavelength range between 710nm and 1180nm. This can be diode pumped and frequency doubled to cover the near UV up to the yellow spectral range. The power is scaleable and we have realized several Watts at 488nm and 460nm. Experimental results will be presented and discussed as well as reliability data to show that this technology has ripened for industrial applications.

522/261 nm cw generation of Pr:YLF laser pumped by OPS laser

In this paper, we report on 2.5 Watts of output power at 522 nm of Pr:YLF laser end pumped by 5.3 W Coherent High Power OPS Laser at 479 nm, and on 620 mW of cw ultraviolet radiation at 261 nm, which has been obtained by intracavity frequency doubling of the Pr:YLF laser with a BBO crystal.

Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments

Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

Ultra-narrow bandwidth OPS laser in the green-yellow wavelength range for Raman spectroscopy

Optically pumped semiconductor lasers are scalable up to several 10ths of Watts of output power, maintaining excellent beam quality and high reliability. A further key advantage of the OPS technology is wavelength flexibility: the accessible wavelength range spans from 915 nm to 1180 nm. Frequency doubling expands this into the blue to yellow spectral range. The current investigation aims at applications (such as Raman spectroscopy) where ultra-narrow bandwidth lasers are required. Results of a single frequency green-yellow OPS laser will be presented.

Powerful Pr 3+ :LiLuF 4 -laser in the visible and ultraviolet spectral range

Visible lasing and frequency doubling of semiconductor and diode laser pumped Pr3+:LiLuF4 will be presented. Output powers of 550 mW in the visible spectral region and 261 mW at 320 nm are demonstrated.

A compact optically pumped semiconductor laser emitting at 593 nm

We achieved 100mW cw of 593nm by intracavity sum frequency generation in a branched cavity, dual laser set up. Two gain media were used: Nd:YVO4 for generating 1342nm, diode-pumped by 3.7W at 808nm, and an optically pumped semiconductor chip (OPS), designed for 1064nm emission, diode-pumped by 1.7W at 808nm. Due to the short upperstate lifetime of the OPS, the generated 593nm output power was stable.A

Nature of electron excitation-energy transfer Cr3+--TR3+ in garnet crystals

This paper is devoted to the donor (chromium ion) excitation-energy decay caused by interaction with the acceptors (rare earth ions) in garnet crystals, as analyzed within the approximation of a static nonradiative energy transfer.