Vasily Cherepanov

Resistance and dopant profiling along freestanding GaAs nanowires

Resistance profiles along as-grown GaAs nanowires were measured with a multi-tip scanning tunneling microscope used as a nanoprober. The nanowires were grown in the vapor-liquid-solid growth mode in a two-temperature-step mode and doped with Zn. Using a transport model, the resistance profile was converted to a dopant profile. The dopant distribution along the nanowires was found to correlate with the temperature during different phases of nanowire growth. The nanowire base grown at higher temperature exhibits a decreased dopant concentration. Mechanical stress by intentional bending of a nanowire was shown not to influence nanowire conductance.

A nanopositioner for scanning probe microscopy: The KoalaDrive

We present a new type of piezoelectric nanopositioner called KoalaDrive which can have a diameter less than 2.5 mm and a length smaller than 10 mm. The new operating principle provides a smooth travel sequence and avoids shaking which is intrinsic to nanopositioners based on inertial motion with sawtooth driving signals. In scanning probe microscopy, the KoalaDrive can be used for the coarse approach of the tip or sensor towards the sample. Inserting the KoalaDrive in a piezo tube for xyz-scanning integrates a complete scanning tunneling microscope (STM) inside a 4 mm outer diameter piezo tube of <10 mm length. The use of the KoalaDrive makes the scanning probe microscopy design ultracompact and accordingly leads to a high mechanical stability. The drive is UHV, low temperature, and magnetic field compatible. The compactness of the KoalaDrive allows building a multi-tip STM as small as a single tip STM.

Influence of strain on diffusion at Ge(111) surfaces

The measurement of the density of two-dimensional islands by scanning tunneling microscopy after submonolayer growth is used to determine the strain dependence of surface diffusion. Templates of strained and relaxed Ge surfaces with the same surface reconstruction are prepared for comparison. The diffusion barrier for Ge and Si adatoms is found to increase with increasing compressive strain of the Ge(111) substrate. When the strain increases from relaxed Ge to Ge strained to the Si lattice constant, the diffusion barrier is estimated to increase by ∼60 meV.

Metal bead crystals for easy heating by direct current

The preparation of metal bead crystals with two wires attached to the crystal is described. These crystals allow for a very easy and efficient method to heat metal single crystals by direct current heating through the connecting wires of the bead crystal. This heating of the bead crystal is sufficient to clean metal surfaces such as the surfaces of Pt and Au as confirmed by Auger spectroscopy and scanning tunneling microscopy (STM). There is no need for any ion sputtering which is conventionally used to clean metal single crystal surfaces. The bead crystals with two leads fabricated from a wide range metals and metal alloys such as Cu, Mo, Ru, Rh, Pd, Ag, Ta, W, Re, Ir, Pt, Au, PtPd, PtRh, AuAg, and PtIr can be used as general purpose metal substrates for surface science studies and other applications. Additionally, these bead crystals can be used to reshape STM tips by indentation of the tip into the soft metal in order to recover atomic resolution imaging on hard substrates.

Surface and Step Conductivities on Si(111) Surfaces

Four-point measurements using a multitip scanning tunneling microscope are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from nonsurface contributions. A termination of the Si(111) surface with either Bi or H results in the two limiting cases of a pure 2D or 3D conductance, respectively. In order to further disentangle the surface conductivity of the step-free surface from the contribution due to atomic steps, a square four-probe configuration is applied as a function of the rotation angle. In total, this combined approach leads to an atomic step conductivity of σ(step)=(29±9)  Ω(-1) m(-1) and to a step-free surface conductivity of σ(surf)=(9±2)×10(-6)  Ω(-1)/□ for the Si(111)-(7×7) surface.

Electrical resistance of individual defects at a topological insulator surface

Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi0.53Sb0.47)2Te3 topological insulator thin film. We find the largest localized voltage drop to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared with the other defects.

Scanning tunneling potentiometry implemented into a multi-tip setup by software

We present a multi-tip scanning tunneling potentiometry technique that can be implemented into existing multi-tip scanning tunneling microscopes without installation of additional hardware. The resulting setup allows flexible in situ contacting of samples under UHV conditions and subsequent measurement of the sample topography and local electric potential with resolution down to Å and μV, respectively. The performance of the potentiometry feedback is demonstrated by thermovoltage measurements on the Ag/Si(111)-(√3×√3)R30° surface by resolving a standing wave pattern. Subsequently, the ability to map the local transport field as a result of a lateral current through the sample surface is shown on Ag/Si(111)-(√3×√3)R30° and Si(111) - (7 × 7) surfaces.

Low vibration laboratory with a single-stage vibration isolation for microscopy applications

The construction and the vibrational performance of a low vibration laboratory for microscopy applications comprising a 100 ton floating foundation supported by passive pneumatic isolators (air springs), which rest themselves on a 200 ton solid base plate, are discussed. The optimization of the air spring system leads to a vibration level on the floating floor below that induced by an acceleration of 10 ng for most frequencies. Additional acoustic and electromagnetic isolation is accomplished by a room-in-room concept.

Si(111) strained layers on Ge(111): Evidence for c ( 2 × 4 ) domains141

The tensile strained Si(111) layers grown on top of Ge(111) substrates are studied by combining scanning tunneling microscopy, low energy electron diffraction and first-principles calculations. It is shown that the layers exhibit c(2x4) domains, which are separated by domain walls along directions. A model structure for the c(2x4) domains is proposed, which shows low formation energy and good agreement with the experimental data. The results of our calculations suggest that Ge atoms are likely to replace Si atoms with dangling bonds on the surface (rest-atoms and adatoms), thus significantly lowering the surface energy and inducing the formation of domain walls. The experiments and calculations demonstrate that when surface strain changes from compressive to tensile, the (111) reconstruction converts from dimer-adatom-stacking fault-based to adatom-based structures.

Erratum: “Low vibration laboratory with a single-stage vibration isolation for microscopy applications” [Rev. Sci. Instrum. 88, 023703 (2017)]

The construction and the vibrational performance of a low vibration laboratory for microscopy applications comprising a 100 ton floating foundation supported by passive pneumatic isolators (air springs), which rest themselves on a 200 ton solid base plate is discussed. The optimization of the air spring system lead to a vibration level on the floating floor below that induced by an acceleration of 10 ng for most frequencies. Additional acoustic and electromagnetic isolation is accomplished by a room-in-room concept.