Victor A. J. van Lint

Correlation of Displacement Effects Produced by Electrons Protons and Neutrons in Silicon

The correlation of displacement effects produced by electrons, protons, and neutrons in silicon is studied. Available data from the literature is employed. In particular the scope of the study is limited to the degradation of excess carrier lifetime and device electrical parameters directly related to it. The degree to which displacement effects may be correlated in order to predict semiconductor device response based on response data to another type of radiation is discussed. Useful ranges of the correlation factors (KT ratios) as a function of device majority carrier type, device resistivity, and injection level are presented. A significant dependence on injection level for the correlation factors is found.

Hardness Assurance Considerations for Long-Term Ionizing Radiation Effects on Bipolar Structures

The purpose of this work was to assess the theoretical understanding of long-term ionization effects in semiconductor bipolar devices in support of developing hardness assurance techniques. The principal effort was directed at studying transistor gain degradation mechanisms by use of models relating semiconductor physical and electrical parameters to surface properties. Ionizing radiation effects on surface properties were used to identify critical physical parameters for use in hardness assurance procedures. Model implications and predictions were then compared with existing data to evaluate their accuracy and usefulness as a hardness assurance tool.

Exploding-Wire Photon Testing of Skynet Satellite

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Electrical and Photon Tests of a Resonant Satellite Shape

A resonant body has been tested and analyzed to determine its SGEMP response. Both electrical and photon excitation were used and their results compare favorably with predictions. A modal analysis of the experimental data using Pronys algorithm yielded the dominant frequencies, damping and excitation amplitudes. Within the accuracy of the measurements, the presence of the photon-induced electron cloud had no effect on the period or damping times of the RESMOD modes. The proximity of an electrical pulser and its 200-Ohm terminating resistor markedly decreased the damping time during electrical excitation.

Spontaneous Discharges and the Effect of Electron Charging on Skynet SGEMP Response

During a series of SGEMP experiments on the Skynet satellite qualification modelt (SQM) a set of spacecraft charging experiments were performed. The principal external surface materials of the SQM are painted fiberglass over an aluminum covered honeycomb (top and bottom thermal shields) and solar-cell panels with 6 mil glass covers over the silicon photocells (around the cylindrical side). When exposed to a steady electron beamthese surfaces become charged by electron implantation in the insulator. At sufficiently high electron energy and accumulated charge the resultant electric fields can cause a spontaneous electric discharge. These electric fields can also modify the trajectories of electrons emitted by an energetic photon pulse, thereby modifying the SGEMP response of the object.

Parameter Sensitivities for Hardness Assurance Displacement Effects in Bipolar Transistors: Part II

A worst-case neutron hardness assurance approach is presented that can be implemented by both the manufacturer and user and is in excellent agreement with the-CRIC data over the normal operating range. The limitations of the technique (VCE(SAT) and severe crowding) are pointed out and suggestions are made on how to approach these limitations.

Radiation effects in detector electronics

Abstract Radiation effects produced in electronics for detectors operated at intense high-energy particle accelerators are reviewed. Both displacement damage in semiconductor material and long-lived ionization effects produced by charge trapping in dielectrics near interfaces are potentially serious. Hardening and test methods must recognize the particular circuits functional requirements. The dominant defects and appropriate hardening method depend on the important parameter (e.g., offset, leakage, noise) as well as the operating frequency.