Victor Boris Sapozhnikov
Seagate Technology
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Publication
Featured researches published by Victor Boris Sapozhnikov.
Journal of The Electrochemical Society | 2003
Ibro Tabakovic; Steve Riemer; Vladyslav A. Vas′ko; Victor Boris Sapozhnikov; Mark T. Kief
Enhancement of current for solutions, containing Ni +2 , Fe +2 , and H + ions, has been observed by linear sweep voltammetry and chronoamperometry when a magnetic field of 0.1 T was applied parallel to the cathode. The current enhancement in a magnetic field was attributed to the convection near the electrode surface induced by the Lorentz force. There is a decrease of the Fe content in NiFe films by approximately 4% obtained with applied magnetic field. It was also demonstrated that the applied magnetic field affects the magnetic properties, crystalline structure and/or texture, stress, and surface roughness of NiFe films.
IEEE Transactions on Magnetics | 2010
Yonghua Chen; Dion Song; Jiaoming Qiu; Paul Kolbo; Lei Wang; Qing He; Mark William Covington; Scott Stokes; Victor Boris Sapozhnikov; Dimitar V. Dimitrov; Kaizhong Gao; Bradley H. Miller
We review the 2 Tbit/in2 reader design landscape based on existing knowledge and projection. We found that the reader signal-to-noise ratio (SNR) requirement will be highly challenging due to the rapid increase in noise and the additional requirements from assisted writing. An acceptable level of channel bit density can be achieved in spite of a slow head-to-media spacing (HMS) reduction provided that both the shield-to-shield (SS) spacing and the ¿a¿ parameter scale with the bit length. We expect the side reading control for high ktpi to be difficult, and potentially a reader side shield will be required. The reader will likely use a higher quality MgO tunneling giant magnetoresistance (TGMR) stack with improved permanent-magnet coercivity. Certain new structures such as the differential reader or the trilayer will likely be part of the solution.
IEEE Transactions on Magnetics | 2007
Robert Lamberton; Michael Allen Seigler; Kalman Pelhos; Hua Zhou; Martin McCurry; Marcus Ormston; Gary Yi; Gregor McClean; Tom Mclaughlin; Paul Kolbo; Olle Heininen; Victor Boris Sapozhnikov; Sining Mao
The current-in-plane giant magnetoresistive (GMR) trilayer readback sensor (CIP-3L), where only one permanent magnet at the back edge of the GMR stack is used to stabilize and bias a dual free layer system, is reviewed. Micromagnetic modeling is employed to show that the design has improved efficiency over abutted junction (ABJ) tunneling magnetoresistive (TMR) head designs. An experimental evaluation of how permanent magnet thickness (PM Th), interlayer exchange coupling (J), and stripe height impact the signal-to-noise ratio, symmetry, and stability of prototype CIP-3L heads is conducted. The study indicates that PM Th >400 nm, J<-0.8 erg/cm2, and a read width to SH aspect ratio of 1:1 to 0.75:1, gives optimal transfer curve performance. A head gimbal assembly spinstand comparison on perpendicular recording media with best-in-class TMR readers shows that although the amplitude of the CIP-3L heads is lower (believed to be process related), the symmetry, stability, and most important, bit-error rate normalized to electrical write width and read width, are comparable. In addition, the CIP-3L design shows better linearity and low-frequency noise performance than TMR heads. The areal density performance of the best CIP-3L heads shows 195 Gb/in2 recording capability and linear densities of 1100 kbpi
IEEE Transactions on Magnetics | 2008
Kaizhong Gao; Victor Boris Sapozhnikov; Anna Zheng; Olle Heinonen
The interlayer in perpendicular recording affects the distance between the head and the soft underlayer (SUL, or keeper) and thus plays an important role in overall recording performance. We investigate the effect of interlayer thickness on read write processes in perpendicular recording. We show that different media designs lead to different responses during the write process. On the other hand, the effect of the interlayer thickness on the read-back process is more complicated; reducing the interlayer thickness may not necessarily lead to better performance.
Journal of Applied Physics | 2009
Victor Boris Sapozhnikov; Kaizhong Gao; Yonghua Chen
We suggest using a different expression for the angular dependence of the junction resistance to match the convenient definition of tunneling magnetoresistive ratio (TMR). In addition, we demonstrate that readers with high TMR have a significant intrinsic asymmetry and we suggest methods of solving the problem.
Archive | 2011
Victor Boris Sapozhnikov; Eric W. Singleton; Mark William Covington
Archive | 2004
Taras Pokhil; Victor Boris Sapozhnikov; Andrzej Stankiewicz; Janusz Nowak
Archive | 2014
Harry Sam Edelman; Victor Boris Sapozhnikov; Mohammed Shariat Ullah Patwari
Archive | 2015
Victor Boris Sapozhnikov; Mohammed Shariat Ullah Patwari
Archive | 2002
Victor Boris Sapozhnikov; Taras Pokhil; Olle Heinonen; Janusz Nowak