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Victor Ray Nastasi

IBM

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Archive | 1987

Trench sidewall isolation by polysilicon oxidation

Inge Grumm Fulton; James Steve Makris; Victor Ray Nastasi; Anthony Francis Scaduto; Anne Charlene Shartel

Archive | 1996

Method of manufacturing an insulated-gate field-effect transistor

Manfred Hauf; Max G. Levy; Victor Ray Nastasi

Archive | 1996

Integrated circuit chip having isolation trenches composed of a dielectric layer with oxidation catalyst material

Manfred Hauf; Max G. Levy; Victor Ray Nastasi

Archive | 1998

Method of filling shallow trenches

Bernhard Fiegl; Walter Glashauser; Max G. Levy; Victor Ray Nastasi

Archive | 1993

Bipolar transistor with reduced topography

Shao-Fu S. Chu; Kyong-Min Kim; Shaw-Ning Mei; Victor Ray Nastasi; Somnuk Ratanaphanyarat

Archive | 1992

Method of making bipolar transistor with reduced topography

Shao-Fu S. Chu; Kyong-Min Kim; Mei Shaw-Ning; Victor Ray Nastasi; Somnuk Ratanaphanyarat

Archive | 1999

Self-aligned trench capacitor capping process for high density DRAM cells

Masami Aoki; Hirofumi Inoue; Bruce W. Porth; Max G. Levy; Victor Ray Nastasi; Emily Fisch; Paul C. Buschner

Archive | 2002

Self-aligned corner Vt enhancement with isolation channel stop by ion implantation

George Richard Goth; John I. Kim; Victor Ray Nastasi

Archive | 1998

Methods to control the threshold voltage of a deep trench corner device

Johann Alsmeier; George Richard Goth; Max G. Levy; Victor Ray Nastasi; James A. O'Neill; Paul C. Parries

Archive | 1997

A method of manufacturing an insulated gate field effect transistor

Manfred Haue; Max G. Levy; Victor Ray Nastasi

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