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Dive into the research topics where Visittapong Yordsri is active.

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Featured researches published by Visittapong Yordsri.


Japanese Journal of Applied Physics | 2016

Effects of microwave and oxygen plasma treatments on capacitive characteristics of supercapacitor based on multiwalled carbon nanotubes

Paweena Dulyaseree; Visittapong Yordsri; Winadda Wongwiriyapan

The effects of microwave and oxygen plasma treatments on the capacitive characteristics of a supercapacitor based on multiwalled carbon nanotubes (MWNTs) were investigated. MWNTs were heat-treated under air ambient at 500 °C for 1 h, and subsequently microwave-treated at 650 W for 70 s (m-MWNTs). Another batch of MWNTs was treated by oxygen plasma for 30 min (p-MWNTs). Pristine MWNTs, m-MWNTs, and p-MWNTs were separately used as electrode materials for supercapacitors. Their cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy results were analyzed. The p-MWNTs show the best performance with a specific capacitance of 238.23 Fg−1. The capacitance improvement is attributed to the increase in the number of oxygen-containing functional groups, as evidenced by Fourier transform-infrared spectroscopy and contact angle measurement. These results suggest that oxygen plasma treatment is a rapid and efficient method for oxygen functionalization.


Microscopy and Microanalysis | 2017

Structures of Green Culms and Charcoal of Bambusa multiplex

Masahiro Kawasaki; Visittapong Yordsri; Chanchana Thanachayanont; Chabaiporn Junin; Shunsuke Asahina; Tetsuo Oikawa; Atsushi Saiki; Makoto Shiojiri

1 JEOL USA Inc., 11 Dearborn Road, Peabody, MA 01960, USA. 2 National Metal and Materials Technology Center, 114 Thailand Science Park, Paholyothin Rd., Klong 1, Klong Luang, Pathumthani 12120, Thailand 3 JEOL Ltd., SM Application Group, Akishima, Tokyo 196-8558, Japan 4 JEOL Asia PTE Ltd., Co Regn No: 199500744W, 2 Corporation Road #01-12, Corporation Place 618494, Singapore 5 University of Toyama, Toyama 930-8555, Japan 6 Kyoto Institute of Technology, Kyoto 606-8585, Japan. † Present address: 1-297 Wakiyama, Kyoto 618-0091 Japan


Microscopy Research and Technique | 2018

Structural investigations on green culms and charcoal of Bambusa multiplex

Visittapong Yordsri; Chanchana Thanachayanont; Chabaiporn Junin; Masahiro Kawasaki; Shunsuke Asahina; Tetsuo Oikawa; Atsushi Saiki; Tadashi Nobuchi; Makoto Shiojiri

Green culms of Bambusa multiplex and the bamboo charcoal carbonized from the green culms at 700°C have been studied by means of X‐ray diffraction, X‐ray fluorescent element analysis, analytical scanning electron microscopy, and analytical scanning transmission electron microscopy (STEM), aiming at industrial applications as raw materials for functional devices and substances. It is revealed that the green culms and the charcoal contain a significant amount of Si, in particular, ∼18 wt % in the skin. The green culms comprise amorphous and crystalline celluloses. The charcoal has a so‐called amorphous structure which is composed of randomly distributed carbon nanotubes and fibers. The growth of Ag‐doped activated charcoal powders that were produced by two different methods using this charcoal powder has also been studied.


Key Engineering Materials | 2016

TEM Analysis of Planar Defects in InGaAsN and GaAs Grown on Ge (001) by MOVPE

Pornsiri Wanarattikan; Sakuntam Sanorpim; Somyod Denchitcharoen; Visittapong Yordsri; Chanchana Thanachayanont; Kenjiro Uesugi; Shigeyuki Kuboya; Kentaro Onabe

InGaAsN on Ge (001) is proposed to be a part of the InGaP(N)/InGaAs/InGaAsN/Ge four-junction solar cell to increase a conversion efficiency over 40%. In this work, InGaAsN lattice-matched film and GaAs buffer layer grown on Ge (001) substrate by metal organic vapor phase epitaxy (MOVPE) were examined by transmission electron microscopy (TEM). Electron diffraction pattern of InGaAsN taken along the [110]-zone axis illustrates single diffracted spots, which represent a layer with a uniformity of alloy composition. Cross-sectional bright field TEM image showed line contrasts generated at the GaAs/Ge interface and propagated to the InGaAsN layer. Dark field TEM images of the same area showed the presence of boundary-like planar defects lying parallel to the growth direction in the InGaAsN film and GaAs buffer layer but not in the Ge substrate. TEM images with the (002) and (00-2) reflections and the four visible {111} planes reflections illustrated planar defects which are expected to attribute to antiphase boundaries (APBs). Moreover, the results observed from atomic force microscopy (AFM) and field emission electron microscopy (FE-SEM) demonstrated the surface morphology of InGaAsN film with submicron-sized domains, which is a characteristic of the APBs.


Materials Letters | 2011

Microstructural investigation and SnO nanodefects in spray-pyrolyzed SnO2 thin films

Chanchana Thanachayanont; Visittapong Yordsri; Chris Boothroyd


Materials Letters | 2012

Microstructural investigation of sol–gel BZT powders

Chanchana Thanachayanont; Visittapong Yordsri; Suphakan Kijamnajsuk; Nawal Binhayeeniyi; Nantakan Muensit


Diamond and Related Materials | 2016

Hybrid gas sensor based on platinum nanoparticles/poly(methyl methacrylate)-coated single-walled carbon nanotubes for dichloromethane detection with a high response magnitude

Worawut Muangrat; Visittapong Yordsri; Rungroj Maolanon; Sirapat Pratontep; Supanit Porntheeraphat; Winadda Wongwiriyapan


Journal of Crystal Growth | 2015

Characterization of semi-polar GaN on GaAs substrates

Phannee Saengkaew; Sakuntam Sanorpim; Visittapong Yordsri; Chanchana Thanachayanont; Kentaro Onabe


Journal of Crystal Growth | 2018

Twin InSb/GaAs quantum nano-stripes: Growth optimization and related properties

Phisut Narabadeesuphakorn; Supachok Thainoi; Aniwat Tandaechanurat; Suwit Kiravittaya; Noppadon Nuntawong; Suwat Sopitopan; Visittapong Yordsri; Chanchana Thanachayanont; Songphol Kanjanachuchai; Somchai Ratanathammaphan; Somsak Panyakeow


Solid State Phenomena | 2018

Hydrothermal Solid Carrot Spheres

Bralee Chayasombat; Visittapong Yordsri; Vittaya Amornkitbamrung; Seksan Lowpa; Samuk Pimanpang; Wasan Maiaugree; Nattawat Ratchapolthavisin; Pikaned Uppachai; Santipap Mitravong; Chris Boothroyd; Chanchana Thanachayanont

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Chanchana Thanachayanont

Thailand National Science and Technology Development Agency

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Winadda Wongwiriyapan

King Mongkut's Institute of Technology Ladkrabang

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Chris Boothroyd

Nanyang Technological University

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Noppadon Nuntawong

Thailand National Science and Technology Development Agency

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Makoto Shiojiri

Kyoto Institute of Technology

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Bralee Chayasombat

Thailand National Science and Technology Development Agency

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