Viyas Gupta

Dynamic Test Methods for COTS SRAMs

In previous works, we have demonstrated the importance of dynamic mode testing of SRAM components under ionizing radiation. Several types of failures are difficult to expose when the device is tested under static (retention) mode. With the purpose of exploring and defining the most complete testing procedures and reveal the potential hazardous behaviors of SRAM devices, we present novel methods for the dynamic mode radiation testing of SRAMs. The proposed methods are based on different word address accessing schemes and data background: Fast Row, Fast Column, Pseudorandom, Adjacent (Gray) and Inverse Adjacent (Gray). These methods are evaluated by heavy ion and atmospheric-like neutron irradiation of two COTS SRAMs of 90 nm and 65 nm technology.

Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.

Methodologies for the Statistical Analysis of Memory Response to Radiation

Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study [1].

Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs

During irradiation testing of RAMs, various failure scenarios may occur which may generate different characteristic Multiple Cell Upset (MCU) error patterns. This work proposes a method based on spatial and temporal criteria to identify them.

SEE on Different Layers of Stacked-SRAMs

This paper presents heavy-ion and proton radiation test results of a 90 nm COTS SRAM with stacked structure. Radiation tests were made using high penetration heavy-ion cocktails at the HIF (Belgium) and at RADEF (Finland) as well as low energy protons at RADEF. The heavy-ion SEU cross-section showed an unusual profile with a peak at the lowest LET (heavy-ion with the highest penetration range). The discrepancy is due to the fact that the SRAM is constituted of two vertically stacked dice. The impact of proton testing on the response of both stacked dice is presented. The results are discussed and the SEU cross-sections of the upper and lower layers are compared. The impact of the stacked structure on the proton SEE rate is investigated.

Real-time SRAM based particle detector

Monitoring radiative environments is of great importance, especially for facilities hosting large particle accelerators and nuclear power plants. Such facilities make use of monitoring systems that are usually composed of different sensors to evaluate the intensity of the ambient radiation field in different locations. In this paper, we propose an SRAM-based monitor that works in dynamic mode (memory continuously accessed), according to data gathered by irradiating our sensor in several particle accelerator facilities. The dynamic mode of operation allows for real-time sensing, especially when the particle fluence is high. In order to ensure the efficiency of the detector, setting parameters, specific for each environment, are determined through characterization.