Vladimir A. Burdov

Controllable electron dynamics in a finite-size quantum well lattice ✩

The nonstationary electron dynamics in a quantum well lattice is considered. We investigate the influence of quasi-constant electric field applied to the system in addition to variable electric field periodic in time. It is shown that various types of controllable motion of an electron density in the lattice can be realized.

Temperature and donor concentration dependence of the conduction electron Lande g-factor in silicon

Temperature and donor concentration dependence of the conduction electron g-factor in silicon has been investigated both experimentally and theoretically. We performed electron spin resonance experiments on Si samples doped with different densities of phosphorus and lithium. Theoretical consideration is based on the renormalization of the electron energy in a weak magnetic field by the interaction with possible perturbing agents, such as phonons and impurity centers. In the second-order perturbation theory interaction of the electron subsystem with the lattice vibrations as well as ionized donors results in decreasing the conduction electron g-factor, which becomes almost linear function both of temperature and impurity concentration.

Electronic States and Optical Gap of Phosphorus-Doped Silicon Nanocrystals Embedded in a Silica Host Matrix

Using the envelope-function approximation the electronic states and the optical gap of silicon nanocrystals heavily doped with phosphorus have been calculated. Assuming the uniform impurity distribution over the crystallite volume we have found the fine structure of the electron ground state (induced by the valley-orbit interaction) and the optical gap as a function of the crystallite size and donor concentration. It is shown that the energy of the ground singlet state decreases almost linearly as the concentration increases, while the valley-orbit splitting increases nonlinearly. Phosphorus doping also results in the decrease of the nanocrystal gap with increasing the impurity concentration.

DISSIPATIVE REGIME OF DYNAMIC LOCALIZATION IN DOUBLE QUANTUM DOT

Dissipative electron dynamics in a double quantum dot, influenced by external ac and dc electric fields, has been analyzed. It was shown that the dissipation caused by phonon environment disappears under certain relations between electric field parameters. In this case one may perform the dynamic localization and form stable electron states localized within one of the dots.