Vladimir M. Promyslov

An investigation of the germylene addition reaction, GeH2 + C2H2: Time-resolved gas-phase kinetic studies and quantum chemical calculations of the reaction energy surface

Time resolved studies of germylene, GeH2, generated by laser flash photolysis of 3,4-dimethylgermacyclopentene-3, have been carried out to obtain rate constants for its bimolecular reaction with ethylene, C2H4. The reaction was studied in the gas-phase over the pressure range 1–100 Torr, with SF6 as bath gas, at 5 temperatures in the range 293–555 K. The reaction shows the characteristic pressure dependence of a third-body assisted association reaction. The high pressure rate constants, obtained by extrapolation, gave the Arrhenius equation: log(k∞/cm3 molecule−1 s−1) = (−10.61 ± 0.08) + (5.37 ± 0.56 kJ mol−1)/RT ln10. These Arrhenius parameters are consistent with a fast reaction occurring at approximately half the collision rate at 298 K. RRKM modelling based on a variational transition state, used in combination with a weak collisional deactivation model, gave good fits to the pressure dependent curves for a choice of the critical energy, E0 = 130 kJ mol−1. Quantum chemical calculations (both DFT and ab initio G2//QCISD) of the GeC2H6 potential energy surface (PES), show that GeH2 + C2H4 initially form a π-complex, which can either collapse to germirane or isomerise by a 1,2 H-shift to ethylgermylene with a relatively low barrier. This indicates that the observed pressure dependence must correspond the formation of two products, of which ethylgermylene is the more stable. It also shows that germiranes with 1-H substituents will thermally rearrange to ethylgermylenes with very low barriers. A detailed examination of the PES shows that other potential reaction products are unlikely to be formed. Thermochemical considerations show that germirane is less strained than silirane, and that divalent state stabilisation energies (DSSE) for germylenes are hardly greater than those for silylenes.

A highly delocalized triplet carbene, 5-Methylhexa-1,2,4-triene-1,3-diyl: matrix IR identification, structure, and reactions.

The first representative of highly delocalized triplet carbenes bearing both vinyl and ethynyl groups at the formal carbene center, 5-methylhexa-1,2,4-triene-1,3-diyl, has been generated in a low-temperature Ar matrix upon UV photolysis of 5-ethynyl-3,3-dimethyl-3H-pyrazole and detected by FTIR spectroscopy. The transformation of 3H-pyrazole into the carbene proceeds in two stages via intermediate 3-diazo-5-methylhex-4-en-1-yne. According to DFT PBE/TZ2P calculations, 5-methylhexa-1,2,4-triene-1,3-diyl possesses an effective conjugation along the five-carbon chain and shows the same type of the bond length alternation as the HC(4m+1)H-type polyacetylenic carbenes. The carbene readily reacts with molecular oxygen, producing carbonyl oxides, which undergo further transformations typical of this type of compound upon irradiation in the UV-visible region. Two major photolytic rearrangements of 5-methylhexa-1,2,4-triene-1,3-diyl represent reactions characteristic of vinyl carbenes and resulting in the formation of 1-ethynyl-3,3-dimethylcyclopropene and 3E-2-methylhexa-1,3-dien-5-yne. A minor reaction is that typical of ethynylcarbenes; this leads to the formation of singlet 2-(2-methylpropenyl)cyclopropenylidene. Fragments of singlet and triplet potential energy surfaces of the C(7)H(8) system have been explored in DFT PBE/TZ2P calculations.

Gas-phase kinetics of chlorosilylene reactions. I. ClSiH + Me3SiH: absolute rate measurements and theoretical calculations for prototype Si-H insertion reactions.

Time-resolved studies of chlorosilylene, ClSiH, generated by the 193 nm laser flash photolysis of 1-chloro-1-silacyclopent-3-ene, have been carried out to obtain rate constants for its bimolecular reaction with trimethylsilane, Me(3)SiH, in the gas phase. The reaction was studied at total pressures up to 100 torr (with and without added SF(6)) over the temperature range 297-407 K. The rate constants were found to be pressure independent and gave the following Arrhenius equation: log(k/cm(3) molecule(-1) s(-1)) = (-13.97 +/- 0.25) + (12.57 +/- 1.64) kJ mol(-1)/RT ln 10. The Arrhenius parameters are consistent with a mechanism involving an intermediate complex, whose rearrangement is the rate-determining step. Quantum chemical calculations of the potential energy surface for this reaction and also the reactions of ClSiH with SiH(4) and the other methylsilanes support this conclusion. Comparisons of both experiment and theory with the analogous Si-H insertion processes of SiH(2) and SiMe(2) show that the main factor causing the lower reactivity of ClSiH is the secondary energy barrier. The calculations also show the existence of a novel intramolecular H-atom exchange process in the complex of ClSiH with MeSiH(3).

Surprisingly Slow Reaction of Dimethylsilylene with Dimethylgermane: Time-Resolved Kinetic Studies and Related Quantum Chemical Calculations

Time-resolved studies of silylene, SiH2, and dimethylsilylene, SiMe2, generated by the 193 nm laser flash photolysis of appropriate precursor molecules have been carried out to obtain rate constants for their bimolecular reactions with dimethylgermane, Me2GeH2, in the gas phase. SiMe2 + Me2GeH2 was studied at five temperatures in the range 299-555 K. Problems of substrate UV absorption at 193 nm at temperatures above 400 K meant that only three temperatures could be used reliably for rate constant measurement. These rate constants gave the Arrhenius parameters log(A/cm3 molecule(-1) s(-1)) = -13.25 +/- 0.16 and E(a) = -(5.01 +/- 1.01) kJ mol(-1). Only room temperature studies of SiH2 were carried out. These gave values of (4.05 +/- 0.06) x 10(-10) cm3 molecule(-1) s(-1) (SiH2 + Me2GeH2 at 295 K) and also (4.41 +/- 0.07) x 10(-10) cm3 molecule(-1) s(-1) (SiH2 + MeGeH3 at 296 K). Rate constant comparisons show the surprising result that SiMe2 reacts 12.5 times slower with Me2GeH2 than with Me2SiH2. Quantum chemical calculations (G2(MP2,SVP)//B3LYP level) of the model Si-H and Ge-H insertion processes of SiMe2 with SiH4/MeSiH3 and GeH4/MeGeH3 support these findings and show that the lower reactivity of SiMe2 with Ge-H bonds is caused by a higher secondary barrier for rearrangement of the initially formed complexes. Full details of the structures of intermediate complexes and the discussion of their stabilities are given in the paper. Other, related, comparisons of silylene reactivity are also presented.

Reactions between germylenes (silylenes) and phosphaalkenes: an experimental and theoretical study. Preparation of the first representative of germaphosphacyclopropanes

Reactions of a number of germylenes and dimethylsilylene with a phosphaalkene, 2,2-bis(trimethylsilyl)-1-phenyl-1-phosphaethene (1), were studied. The reaction of short-lived dimethylgermylene with 1 produced a phosphagermirane 3 (the first representative of a new class of heterocyclic compounds). Compound 3 was characterized in solution by 1H, 13C, 31P, and 29Si NMR spectroscopy. Subsequent reaction of 3 with dimethylgermylene results in 2,2,3,3-tetramethyl-4,4-bis(trimethylsilyl)-1-phenyl-2,3-digerma-1-phosphacyclobutane 4, which has not been reported so far. In order to rationalize different reactivities of germylenes towards alkenes and phosphaalkenes, the addition products of GeH2 to ethylene and phosphaethene (HP=CH2) were studied using the G2 computational scheme and DFT PBE technique. The adducts of GeMe2 (GeCl2) with HP=CH2 and of GeMe2 with PhP=C(SiH3)2 were also calculated by the DFT PBE method. According to calculations, the exothermicity, DE, of cycloaddition of GeH2 and GeMe2 to the phosphaalkenes HP=CH2 and PhP=C(SiH3)2 (43.5—39.7 kcal mol–1) is nearly twice as high as the exothermicity of cycloaddition of these germylenes to ethylene. In addition to the minimum corresponding to the three-membered cycle, a number of minima corresponding to quite stable donor-acceptor complexes in which the Ge atom is coordinated by the lone electron pair of the P atom in the phosphaalkene molecule were located on the potential energy surface of the germylene—phosphaalkene system. The complexation energy of the complex of GeH2 (GeMe2) with phosphaethene is 25.0 (16.9) kcal mol–1. For GeCl2, the exothermicity of cycloaddition to HP=CH2 decreases to 7.6 kcal mol–1 and the complexation energy decreases to 8.2 kcal mol–1.

Unusual Isotope Effect in the Reaction of Chlorosilylene with Trimethylsilane-1-d. Absolute Rate Studies and Quantum Chemical and Rice–Ramsperger–Kassel–Marcus Calculations Provide Strong Evidence for the Involvement of an Intermediate Complex

Time-resolved studies of chlorosilylene, ClSiH, generated by the 193 nm laser flash photolysis of 1-chloro-1-silacyclopent-3-ene, have been carried out to obtain rate constants for its bimolecular reaction with trimethylsilane-1-d, Me(3)SiD, in the gas phase. The reaction was studied at total pressures up to 100 Torr (with and without added SF(6)) over the temperature range of 295-407 K. The rate constants were found to be pressure independent and gave the following Arrhenius equation: log[(k/(cm(3) molecule(-1) s(-1))] = (-13.22 ± 0.15) + [(13.20 ± 1.00) kJ mol(-1)]/(RT ln 10). When compared with previously published kinetic data for the reaction of ClSiH with Me(3)SiH, kinetic isotope effects, k(D)/k(H), in the range from 7.4 (297 K) to 6.4 (407 K) were obtained. These far exceed values of 0.4-0.5 estimated for a single-step insertion process. Quantum chemical calculations (G3MP2B3 level) confirm not only the involvement of an intermediate complex, but also the existence of a low-energy internal isomerization pathway which can scramble the D and H atom labels. By means of Rice-Ramsperger-Kassel-Marcus modeling and a necessary (but small) refinement of the energy surface, we have shown that this mechanism can reproduce closely the experimental isotope effects. These findings provide the first experimental evidence for the isomerization pathway and thereby offer the most concrete evidence to date for the existence of intermediate complexes in the insertion reactions of silylenes.

Gas‐Phase Kinetics of Chlorosilylene Reactions II. ClSiH + C2H4: Absolute Rate Measurements and Quantum Chemical and RRKM Calculations for the Prototype π Addition Reaction

Time-resolved studies of chlorosilylene, ClSiH, generated by the 193 nm laser flash photolysis of 1-chloro-1-silacyclopent-3-ene, are carried out to obtain rate constants for its bimolecular reaction with ethene, C(2)H(4), in the gas-phase. The reaction is studied over the pressure range 0.13-13.3 kPa (with added SF(6)) at five temperatures in the range 296-562 K. The second order rate constants, obtained by extrapolation to the high pressure limits at each temperature, fitted the Arrhenius equation: log(k(infinity)/cm(3) molecule(-1) s(-1)) = (-10.55+/-0.10) + (3.86 +/- 0.70) kJ mol(-1)/RT ln10. The Arrhenius parameters correspond to a loose transition state and the rate constant at room temperature is 43% of that for SiH(2) + C(2)H(4), showing that the deactivating effect of Cl-for-H substitution in the silylene is not large. Quantum chemical calculations of the potential energy surface for this reaction at the G3MP2//B3LYP level show that, as well as 1-chlorosilirane, ethylchlorosilylene is a viable product. The calculations reveal how the added effect of the Cl atom on the divalent state stabilisation of ClSiH influences the course of this reaction. RRKM calculations of the reaction pressure dependence suggest that ethylchlorosilylene should be the main product. The results are compared and contrasted with those of SiH(2) and SiCl(2) with C(2)H(4).

Mechanism of thermal decomposition of allyltrichlorosilane with formation of three labile intermediates: dichlorosilylene, allyl radical, and atomic chlorine

It is experimentally found that allyltrichlorosilane dissociates under vacuum pyrolysis (~10–2 Torr) at temperatures above 1100 K to form three labile intermediates: allyl radical, dichlorosilylene, and monoatomic chlorine. On the basis of experimental and theoretical data obtained, it is shown that the decomposition reaction proceeds in two steps. The first step is a typical reaction of homolytic decomposition to two radicals (C3H5 and SiCl3) at the weakest Si—C bond. Due to weakness of the Si—Cl bond in the SiCl3 radical, the energy of which is even somewhat lower than the dissociation energy of the Si—C bond in starting AllSiCl3, this radical undergoes further dissociation to SiCl2 and Cl, thus resulting in three intermediates of different classes of highly reactive species formed from AllSiCl3.

Complexes of dichlorosilylene with allyl chloride and allyl bromide: matrix IR spectroscopy and quantum chemical studies

Formation of donor-acceptor complexes between dichlorosilylene, SiCl2, and allyl halides, AllHal(Hal= Cl, Br) was detected in Ar matrixes using matrix IR spectroscopy. In agreement with the predictions of the performed quantum chemical calculations, only broad unstructured absorption bands contributed by different conformers of the 1 : 1 complexes between SiCl2 and AllHal were observed in IR spectra of matrixes after deposition in the regions of characteristic vibrations of starting reactants. Annealing of matrixes resulted in strong narrowing the bands due to conversions of different conformers into the most stable structures. The predominantly formed conformers in both the reaction systems were those of complexes with SiCl2 coordinated to the Hal atoms of AllHal in the gauche conformations. At the same time, according to the calculations, the complexes with SiCl2 coordination to the double bonds of AllHal can be only slightly less stable than the complexes with coordination to the Hal atoms, and all these basic centers can be considered as comparable in their activity in the complexation. The only products revealed upon photolysis of complexes were the products of silylene insertion into the C–Hal bonds, viz., AllSiCl3 and AllSiCl2Br. Theoretical study of thermal transformations in the SiCl2 + AllHal systems showed that formal insertion of SiCl2 in the C–Hal bonds and its addition to the double bonds of AllHal have low activation barriers of 3–8 kcal mol–1. However, these barriers are too high for these reactions to occur under the matrix isolation conditions.

Quantum chemical study of σ-dimerization reaction of 1-silacycloprop-2-enes

The PBE/TZ2P method was used to study a concerted σ-dimerization reaction of 1-silacycloprop-2-enes having substituents with different electron effects. The corresponding reaction channels were founds in all the cases, that indicated a general character of this reaction. The reaction barriers varied from moderately high to extremely low. The suggestions made earlier on a possibility for this process to take place in the course of the reaction of silylenes with alkynes at elevated temperature were quantitatively confirmed for the first time. The influence of substituents on the barrier heights and exothermicity of σ-dimerization of 1-silacycloprop-2-enes was studied. The σ-dimerization reaction of 1-silacycloprop-2-enes is one of a few examples of metathesis of s-bonds in the absence of transition metal complexes.