Vu Xuan Hien

Hydrothermal Synthesis and Ammonia Sensing Properties of WO3/Fe2O3 Nanorod Composites

WO3 nanorods (NRs) and α-Fe2O3 NRs were fabricated by hydrothermal treatment. Composites of these materials were created by mixing with ratios of 1:2, 1:1 and 2:1 in weight. Morphology, structure and composition characteristics of the WO3/Fe2O3 NRs composites were characterized by scanning electron microscopy, x-ray diffraction and energy dispersive x-ray spectroscopy analyses. The results of sensing measurements indicated that the sensor based on WO3:Fe2O3 with the ratio of 2:1 exhibited fairly good sensitivity toward NH3 at 300°C and the sensor based on WO3:Fe2O3 with the ratio of 1:1 can be used as a NH3 sensor with an operating temperature of 350°C. Selectivity and response–recovery times are suitable for practical applications. Finally, the mechanism for the improvement in the gas-sensing property was discussed.

Effect of Surface Treatment on the Formation of NiO Nanomaterials by Thermal Oxidation

Thermal oxidation has significant potential for use in synthesizing metal-oxide nanostructures from metallic materials. However, this method has limited applicability to the synthesis of multi-morphology NiO from Ni foil. Techniques consisting of mechanical and chemical approaches were used to pre-treat the Ni foil (prior to oxidation) to promote the formation of nanowires and nanoplates on the NiO layer. These morphologies were realized on the Ni foils scratched by sand paper and a knife, respectively, and subsequently heat-treated at 500C for 24 h. Small nanowires (diameter: <10 nm) formed on the Ni foil treated by absolute HNO3 and then oxidized at 500 C for 24 h. The formation of various morphologies (on the pre-treated Ni foil), which differ from that formed in the case of pristine Ni foil after oxidation, may be attributed to the surface melting phenomenon that occurs during the nucleation process.

Sn Spheres Embedded in a SiO2 Matrix: Synthesis and Potential Application As Self-Destructing Materials

We introduce a simple process for the fabrication of SiO2 films embedded with β-Sn-rich nano/microspheres. Sn spheres with maximum and minimum sizes of 10 μm (near the SiO2 surface) and 5 nm (at the Si/SiO2 interface) were grown within a 0.7-5.7 μm-thick SiO2 layer by evaporating SnO powders onto an Si (100) substrate for 1-600 min at 600-900 °C and 0.001-5.0 Torr. A possible growth mechanism of these materials is discussed. The current-voltage characteristics of the as-fabricated samples were investigated to identify potential applications. During these tests, small flashes of light and the presence of damaged areas were observed at the oxide surfaces of the samples using an optical camera and a field emission scanning electron microscope, respectively. The electrical breakdown and shutdown of the devices observed in the current-voltage curves were attributed to the destruction of the SiO2 surface. In addition, the current-time responses show that the size of the damaged regions can be controlled by the voltage and duration of the applied stress, and are independent of the size and shape of the electrodes. The present materials thus possess great potential for applications in self-destructing devices.