Vyacheslav F. Solovyov

Growth rate limiting mechanisms of YBa2Cu3O7 films manufactured by ex situ processing

Abstract YBa 2 Cu 3 O 7 films were fabricated on SrTiO 3 substrates using the BaF 2 ex situ process. Precursor films 1, 3 and 5 μm thick were processed in an atmospheric pressure reactor using a gas mixture of oxygen, nitrogen and water vapor. The films were processed at different water vapor pressures and it was observed that the film growth rate was independent of film thickness and proportional to the square root of the water vapor pressure. The dependence of the film growth rate on film area was also investigated for film areas varying from 10 to 160 mm 2 . Surprisingly, it was observed that the growth rate was inversely proportional to square root of the area of the film. A theoretical model is developed and applied to the experimental results presented in this paper. The model correctly predicts the inverse square root dependence of the film growth rate on sample area. In addition, it predicts that it will be difficult to process long samples, such as tapes, in simple reactor geometries.

Iron-chalcogenide FeSe0.5Te0.5 coated superconducting tapes for high field applications

The high upper critical field characteristic of the recently discovered iron-based superconducting chalcogenides opens the possibility of developing a new type of non-oxide high-field superconducting wires. In this work, we utilize a buffered metal template on which we grow a textured FeSe

Kinetics of YBa2Cu3O7 film growth by postdeposition processing

_{0.5}

Thick YBa2Cu3O7 films by post annealing of the precursor by high rate e-beam deposition on SrTiO3 substrates

Te

Ex-situ post-deposition processing for large area Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7/ films and coated tapes

_{0.5}

Growth of thick YBa2Cu3O7 layers via a barium fluoride process

layer, an approach developed originally for high temperature superconducting coated conductors. These tapes carry high critical current densities (>1

Mechanisms for hetero-epitaxial nucleation of YBa2Cu3O∼6.1 at the buried precursor/SrTiO3 interface in the postdeposition reaction process

\times10^{4}

Nucleation of YBa2Cu3O7−x on buffered metallic substrates in thick precursor films made by the BaF2 process

A/cm

Three- and four-μm-thick YBa2Cu3O7 layers with high critical-current densities on flexible metallic substrates by the BaF2 process

^{2}

Highly efficient solid state catalysis by reconstructed (001) Ceria surface

) at about 4.2K under magnetic field as high as 25 T, which are nearly isotropic to the field direction. This demonstrates a very promising future for iron chalcogenides for high field applications at liquid helium temperatures. Flux pinning force analysis indicates a point defect pinning mechanism, creating prospects for a straightforward approach to conductor optimization.