W. J. Chang

Electronic structure and transport properties of La0.7Ce0.3MnO3

X-ray absorption spectroscopy (XAS), optical reflectance spectroscopy, and the Hall effect measurements were used to investigate the electronic structure in

Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La0.7Ce0.3MnO3 films

{\mathrm{La}}_{0.7}{\mathrm{Ce}}_{0.3}\mathrm{Mn}{\mathrm{O}}_{3}

Phase separation and persistent magnetic memory effect in La0.625Ca0.375MnO3 and La0.375Pr0.25Ca0.375MnO3 films

thin films (LCeMO). The XAS results are consistent with those obtained from

Strong anisotrpoic maganetoresistance and magnetic interaction in La0.7Ce0.3MnO3∕La0.7Ca0.3MnO3 p-n junction

\mathrm{LDA}+U

Anisotropic magnetoresistance of La0.7Ca0.3MnO3 thin film biepitaxial step junctions

calculations. In that the doping of Ce has shifted up the Fermi level and resulted in marked shrinkage of hole pockets originally existing in

Electronic structure and transport properties ofLa0.7Ce0.3MnO3

{\mathrm{La}}_{0.7}{\mathrm{Ca}}_{0.3}\mathrm{Mn}{\mathrm{O}}_{3}

Electronic structure and transport properties of La_0.7Ce_0.3MnO_3

(LCaMO). The Hall measurements indicate that in LCeMO the carriers are still displaying the characteristics of holes as

Electronic structure of pyrochlore Cd2Re2O7

\mathrm{LDA}+U

Spectroscopic evidence of electron doping in La0.7Ce0.3MnO3

calculations predict. Analyses of the optical reflectance spectra evidently disapprove the scenario that the present LCeMO might have been dominated by the La-deficient phases.

Magnetoresistance of La0.7Ca0.3MnO3 thin film biepitaxial step junctions

Single-phase electron-doped manganite thin films with nominal composition of La0.7Ce0.3MnO3(LCeMO) have been prepared on SrTiO3(100) substrates by pulsed laser deposition. The conditions for obtaining purely single-phase LCeMO films lie within a very narrow window of substrate temperature (Ts∼720°C) and laser energy density (ED∼2J∕cm2) during deposition. In situ postdeposition annealing, mainly to relax the possible epitaxial in-plane tensile strain between the film and the substrate, leads to an increasing c-axis lattice constant accompanied by the formation of secondary CeO2 phase and higher metal-insulator transition temperature. This is indicative of a strong coupling between the electron and lattice degree of freedom.