W. Sheng

Multiband theory of multi-exciton complexes in self-assembled quantum dots

We report on a multiband microscopic theory of many-exciton complexes in self-assembled quantum dots. The single particle states are obtained by three methods: single-band effective-mass approximation, the multiband

Atomistic theory of electronic and optical properties of InAs/InP self-assembled quantum dots on patterned substrates

\mathbf{k}∙\mathbf{p}

Non-linear exciton spin-splitting in single InAs/GaAs self-assembled quantum structures in ultrahigh magnetic fields

method, and the tight-binding method. The electronic structure calculations are coupled with strain calculations via Bir-Pikus Hamiltonian. The many-body wave functions of

Tuning the exciton g factor in single InAs/InP quantum dots

N

Photoluminescence of single, site-selected, InAs∕InP quantum dots in high magnetic fields

electrons and

Building semiconductor nanostructures atom by atom

N

Electron and Hole States in Vertically Coupled Self‐Assembled InGaAs Quantum Dots

valence holes are expanded in the basis of Slater determinants. The Coulomb matrix elements are evaluated using statically screened interaction for the three different sets of single particle states and the correlated

Theory of excitonic filling factor v = 2 quantum Hall droplet in self‐assembled quantum dots

N

Excitonic Energy Shell Structure of Self-Assembled InGaAs/GaAs Quantum Dots

-exciton states are obtained by the configuration interaction method. The theory is applied to the excitonic recombination spectrum in InAs/GaAs self-assembled quantum dots. The results of the single-band effective-mass approximation are successfully compared with those obtained by using the of

Electronic and optical properties of semiconductor and graphene quantum dots

\mathbf{k}∙\mathbf{p}