W. Zaleszczyk

ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy

ZnTe nanowires with an average diameter of about 30nm and lengths above 1μm were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3–20A thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55° to the (100) substrate surface normal. They have a zinc-blende crystal structure and their growth axis is ⟨111⟩.

ZnTe–ZnO core–shell radial heterostructures grown by the combination of molecular beam epitaxy and atomic layer deposition

ZnTe-ZnO core-shell radial heterostructures were grown using a new method of combining molecular beam epitaxy (MBE) and atomic layer deposition (ALD). Zinc telluride nanowires (core) were grown on a GaAs substrate using gold catalyzed vapor-liquid-solid mechanism. An atomic layer deposition technique using diethyl zinc and deionized water as precursors was applied for zinc oxide shell formation. The core-shell ZnTe-ZnO heterostructures thus obtained were characterized by scanning electron microscopy, transmission electron microscopy, x-ray diffraction and photoluminescence measurements.

Spin currents in diluted magnetic semiconductors.

We study zero-bias spin separation in (Cd,Mn)Te/(Cd,Mg)Te diluted magnetic semiconductor structures. The spin current generated by electron gas heating under terahertz radiation is converted into a net electric current by applying an external magnetic field. The experiments show that the spin polarization of the magnetic ion system enhances drastically the conversion process due to giant Zeeman splitting of the conduction band and spin-dependent electron scattering on localized Mn(2+) ions.

Zn1−xMnxTe Diluted Magnetic Semiconductor Nanowires Grown by Molecular Beam Epitaxy

It is shown that the growth of II-VI diluted magnetic semiconductor nanowires is possible by the catalytically enhanced molecular beam epitaxy (MBE). Zn(1-x)MnxTe NWs with manganese content up to x=0.60 were produced by this method. X-ray diffraction, Raman spectroscopy, and temperature dependent photoluminescence measurements confirm the incorporation of Mn(2+) ions in the cation substitutional sites of the ZnTe matrix of the NWs.

Upconverting/magnetic: Gd2O3:(Er3+,Yb3+,Zn2+) nanoparticles for biological applications: effect of Zn2+ doping

Upconverting Gd2O3 nanoparticles (NPs) doped 1% Er3+ and 18% Yb3+ permits one to perform optical imaging. Because of the presence of Gd3+ they are useful in MRI. The main challenge is to enhance the NPs upconversion efficiency. As a result of co-doping the NPs with Zn2+ ions, achieved using microwave-induced solution combustion synthesis, we obtained optimal upconversion quantum yields (UQYs). The breakdown of the local crystal field symmetry around the rare earth ions, maximal in the presence of 5% of zinc, may be responsible for the highest observed UQY. The upconversion of IR light results in emission of visible red light mainly at 660 nm and at 550 nm. Optimized red photoluminescence of the samples observed in an organic environment was examined as a function of the laser power density to explain the mechanism of the upconversion emission. Paramagnetic properties of the NPs were determined by superconducting quantum interference device measurements. The non-functionalized nanoparticles incubated with HeLa cells were endocytosed and imaged by confocal laser scanning microscopy. We investigated their localization inside HeLa cells for various incubation times and NPs concentrations. PrestoBlue toxicity assay was performed to test the NPs bio-efficacy.

Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping level, i.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with the photoluminescence measurements which showed the presence of Mn(2+) acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires.

Spin Splitting Anisotropy in Single Diluted Magnetic Nanowire Heterostructures

We study the impact of the nanowire shape anisotropy on the spin splitting of excitonic photoluminescence. The experiments are performed on individual ZnMnTe/ZnMgTe core/shell nanowires as well as on ZnTe/ZnMgTe core/shell nanowires containing optically active magnetic CdMnTe insertions. When the magnetic field is oriented parallel to the nanowire axis, the spin splitting is several times larger than for the perpendicular field. We interpret this pronounced anisotropy as an effect of mixing of valence band states arising from the strain present in the core/shell geometry. This interpretation is further supported by theoretical calculations which allow to reproduce experimental results.

Activation of an intense near band edge emission from ZnTe/ZnMgTe core/shell nanowires grown on silicon

The absence of luminescence in the near band edge energy region of Te-anion based semiconductor nanowires grown by gold catalyst assisted molecular beam epitaxy has strongly limited their applications in the field of photonics. In this paper, an enhancement of the near band edge emission intensity from ZnTe/ZnMgTe core/shell nanowires grown on Si substrates is reported. A special role of the use of Si substrates instead of GaAs substrates is emphasized, which results in an increase of the near band edge emission intensity by at least one order of magnitude accompanied by a simultaneous reduction of the defect related luminescence. A possible explanation of this effect relies on the presence of Ga-related deep level defects in structures grown on GaAs substrates, which are absent when Si substrates are used. Monochromatic mapping of the cathodoluminescence clearly confirms that the observed emission originates, indeed, from the ZnTe/ZnMgTe core/shell nanowires, whereas individual objects are studied by means of microphotoluminescence.

Strain-induced energy gap variation in ZnTe/ZnMgTe core/shell nanowires

Strain-induced changes of ZnTe energy gap in ZnTe/ZnMgTe core/shell nanowires arising from lattice mismatch between the core and the shell semiconductor are studied by means of optical methods. It is shown that the increase of the Mg content in the shell, as well as the increase of the shell thickness result in an effective redshift of the near band edge photoluminescence from ZnTe nanowire cores, which reflects directly the decrease of energy gap under tensile strain conditions. The conclusions are supported by theoretical calculations in terms of the valence force field model. The observed change of ZnTe energy gap can be as large as 120 meV with respect to the unstrained conditions and can be tuned in a continuous manner by adjusting shell parameters, which open a path towards an effective band gap engineering in these structures.

TEM characterization of MBE grown CdTe/ZnTe axial nanowires.

CdTe/ZnTe axial nanowires were successfully fabricated by molecular beam epitaxy with the use of Au nano‐catalysts and vapour–liquid–solid growth mechanism. Nanowires had zinc‐blende structure with numerous stacking faults in the bottom ZnTe part and near perfect crystalline structure in the top CdTe part. Energy dispersive X‐ray spectroscopy (EDXS) and lattice fringe spacing analysis revealed nonabrupt nature of hetero−interface, whose width was estimated to be 50–70 nm for the nanowires having a diameter in the range from 40 to 50 nm.