Wai-Lun Chan

Making waves: Kinetic processes controlling surface evolution during low energy ion sputtering

When collimated beams of low energy ions are used to bombard materials, the surface often develops a periodic pattern or “ripple” structure. Different types of patterns are observed to develop under different conditions, with characteristic features that depend on the substrate material, the ion beam parameters, and the processing conditions. Because the patterns develop spontaneously, without applying any external mask or template, their formation is the expression of a dynamic balance among fundamental surface kinetic processes, e.g., erosion of material from the surface, ion-induced defect creation, and defect-mediated evolution of the surface morphology. In recent years, a comprehensive picture of the different kinetic mechanisms that control the different types of patterns that form has begun to emerge. In this article, we provide a review of different mechanisms that have been proposed and how they fit together in terms of the kinetic regimes in which they dominate. These are grouped into regions of behavior dominated by the directionality of the ion beam, the crystallinity of the surface, the barriers to surface roughening, and nonlinear effects. In sections devoted to each type of behavior, we relate experimental observations of patterning in these regimes to predictions of continuum models and to computer simulations. A comparison between theory and experiment is used to highlight strengths and weaknesses in our understanding. We also discuss the patterning behavior that falls outside the scope of the current understanding and opportunities for advancement.

The Quantum Coherent Mechanism for Singlet Fission: Experiment and Theory

The absorption of one photon by a semiconductor material usually creates one electron-hole pair. However, this general rule breaks down in a few organic semiconductors, such as pentacene and tetracene, where one photon absorption may result in two electron-hole pairs. This process, where a singlet exciton transforms to two triplet excitons, can have quantum yields as high as 200%. Singlet fission may be useful to solar cell technologies to increase the power conversion efficiency beyond the so-called Shockley-Queisser limit. Through time-resolved two-photon photoemission (TR-2PPE) spectroscopy in crystalline pentacene and tetracene, our lab has recently provided the first spectroscopic signatures in singlet fission of a critical intermediate known as the multiexciton state (also called a correlated triplet pair). More importantly, we found that population of the multiexciton state rises at the same time as the singlet state on the ultrafast time scale upon photoexcitation. This observation does not fit with the traditional view of singlet fission involving the incoherent conversion of a singlet to a triplet pair. However, it provides an experimental foundation for a quantum coherent mechanism in which the electronic coupling creates a quantum superposition of the singlet and the multiexciton state immediately after optical excitation. In this Account, we review key experimental findings from TR-2PPE experiments and present a theoretical analysis of the quantum coherent mechanism based on electronic structural and density matrix calculations for crystalline tetracene lattices. Using multistate density functional theory, we find that the direct electronic coupling between singlet and multiexciton states is too weak to explain the experimental observation. Instead, indirect coupling via charge transfer intermediate states is two orders of magnitude stronger, and dominates the dynamics for ultrafast multiexciton formation. Density matrix calculation for the crystalline tetracene lattice satisfactorily accounts for the experimental observations. It also reveals the critical roles of the charge transfer states and the high dephasing rates in ensuring the ultrafast formation of multiexciton states. In addition, we address the origins of microscopic relaxation and dephasing rates, and adopt these rates in a quantum master equation description. We show the need to take the theoretical effort one step further in the near future by combining high-level electronic structure calculations with accurate quantum relaxation dynamics for large systems.

Whisker formation in Sn and Pb-Sn coatings: Role of intermetallic growth, stress evolution, and plastic deformation processes

We have simultaneously measured the evolution of intermetallic volume, stress, and whisker density in Sn and Pb–Sn alloy layers on Cu to study the fundamental mechanisms controlling whisker formation. For pure Sn, the stress becomes increasingly compressive and then saturates, corresponding to a plastically deformed region spreading away from the growing intermetallic particles. Whisker nucleation begins after the stress saturates. Pb–Sn layers have similar intermetallic growth kinetics but the resulting stress and whisker density are much less. Measurements after sputtering demonstrate the important role of the surface oxide in inhibiting stress relaxation.

Harvesting Singlet Fission for Solar Energy Conversion: One- versus Two-Electron Transfer from the Quantum Mechanical Superposition

Singlet fission, the creation of two triplet excitons from one singlet exciton, is being explored to increase the efficiency of solar cells and photo detectors based on organic semiconductors, such as pentacene and tetracene. A key question is how to extract multiple electron-hole pairs from multiple excitons. Recent experiments in our laboratory on the pentacene/C(60) system (Chan, W.-L.; et al. Science 2011, 334, 1543-1547) provided preliminary evidence for the extraction of two electrons from the multiexciton (ME) state resulting from singlet fission. The efficiency of multielectron transfer is expected to depend critically on other dynamic processes available to the singlet (S(1)) and the ME, but little is known about these competing channels. Here we apply time-resolved photoemission spectroscopy to the tetracene/C(60) interface to probe one- and two-electron transfer from S(1) and ME states, respectively. Unlike ultrafast (~100 fs) singlet fission in pentacene where two-electron transfer from the multiexciton state resulting from singlet fission dominates, the relatively slow (~7 ps) singlet fission in tetracene allows both one- and two-electron transfer from the S(1) and the ME states that are in a quantum mechanical superposition. We show evidence for the formation of two distinct charge transfer states due to electron transfer from photoexcited tetracene to the lowest unoccupied molecular orbital (LUMO) and the LUMO+1 levels in C(60), respectively. Kinetic analysis shows that ~60% of the S(1) ⇔ ME quantum superposition transfers one electron through the S(1) state to C(60) while ~40% undergoes two-electron transfer through the ME state. We discuss design principles at donor/acceptor interfaces for optimal multiple carrier extraction from singlet fission for solar energy conversion.

Harvesting singlet fission for solar energy conversion via triplet energy transfer

The efficiency of a conventional solar cell may be enhanced if one incorporates a molecular material capable of singlet fission, that is, the production of two triplet excitons from the absorption of a single photon. To implement this, we need to successfully harvest the two triplets from the singlet fission material. Here we show in the tetracene (Tc)/copper phthalocyanine (CuPc) model system that triplets produced from singlet fission in the former can transfer to the later on the timescale of 45±5 ps. However, the efficiency of triplet energy transfer is limited by a loss channel due to faster formation (400±100 fs) and recombination (2.6±0.5 ps) of charge transfer excitons at the interface. These findings suggest a design principle for efficient energy harvesting from singlet fission: one must reduce interfacial area between the two organic chromophores to minimize charge transfer/recombination while optimizing light absorption, singlet fission and triplet rather than singlet transfer.

All-Printable ZnO Quantum Dots/Graphene van der Waals Heterostructures for Ultrasensitive Detection of Ultraviolet Light

In ZnO quantum dot/graphene heterojunction photodetectors, fabricated by printing quantum dots (QDs) directly on the graphene field-effect transistor (GFET) channel, the combination of the strong quantum confinement in ZnO QDs and the high charge mobility in graphene allows extraordinary quantum efficiency (or photoconductive gain) in visible-blind ultraviolet (UV) detection. Key to the high performance is a clean van der Waals interface to facilitate an efficient charge transfer from ZnO QDs to graphene upon UV illumination. Here, we report a robust ZnO QD surface activation process and demonstrate that a transition from zero to extraordinarily high photoresponsivity of 9.9 × 108 A/W and a photoconductive gain of 3.6 × 109 can be obtained in ZnO QDs/GFET heterojunction photodetectors, as the ZnO QDs surface is systematically engineered using this process. The high figure-of-merit UV detectivity D* in exceeding 1 × 1014 Jones represents more than 1 order of magnitude improvement over the best reported previously on ZnO nanostructure-based UV detectors. This result not only sheds light on the critical role of the van der Waals interface in affecting the optoelectronic process in ZnO QDs/GFET heterojunction photodetectors but also demonstrates the viability of printing quantum devices of high performance and low cost.

Stress-enhanced pattern formation on surfaces during low energy ion bombardment

Ion-induced surface patterns (sputter ripples) are observed to grow more rapidly than predicted by current models, suggesting that additional sources of roughening may be involved. Using a linear stability analysis, we consider the contribution of ion-induced stress in the near surface region to the formation rate of ripples. This leads to a simple model that combines the effects of stress-induced roughening with the curvature-dependent erosion model of Bradley and Harper. The enhanced growth rate observed on Cu surfaces appears to be consistent with the magnitude of stress measured from wafer curvature measurements.

Stress evolution and defect diffusion in Cu during low energy ion irradiation: Experiments and modeling

Measurements of stress generation in Cu during low energy ion irradiation show that the induced stress depends on temperature and ion flux. A steady-state compressive stress is observed during irradiation, which turns into tensile stress after the irradiation is stopped. The results cannot be explained by the incorporation of gas ions alone, and point defects generated by the ions must be considered. In this work, the authors develop a continuum model that includes ion implantation, sputtering, and defect diffusion to explain the experimental data. The authors show that the experimental results can be reproduced primarily by considering a difference in diffusivity between interstitials and vacancies.

Influence of Step-Edge Barriers on the Morphological Relaxation of Nanoscale Ripples on Crystal Surfaces

We show that the decay of sinusoidal ripples on crystal surfaces, where mass transport is limited by the attachment and detachment of atoms at the step edges, is remarkably different from the decay behavior that has been reported until now. Unlike the decreasing or at most constant rate of amplitude decay of sinusoidal profiles observed in earlier work, we find that the decay rate increases with decreasing amplitude in this kinetic regime. The rate of shape invariant amplitude relaxation is shown to be inversely proportional to both the square of the wavelength and the current amplitude. We have also carried out numerical simulations of the relaxation of realistic sputter ripples.

Spontaneous Patterning of Surfaces by Low-Energy Ion Beams

Pattern formation by low-energy ion beams results from a balance among different kinetic processes on the surface. Some increase the roughness of the surface (e.g., sputtering) while others tend to smoothen the surface (e.g., diffusion) and the interaction between them leads to the development of a characteristic periodicity on the surface. In this chapter, we describe the different physical mechanisms that contribute to sputter ripple formation and their dependence on the processing parameters of flux and temperature. This is used to develop a linear instability model that can be applied to understanding the different features of patterning that are found under different processing conditions.