Walter Escoffier

Unveiling the magnetic structure of graphene nanoribbons.

We perform magnetotransport measurements in lithographically patterned graphene nanoribbons down to a 70 nm width. The electronic spectrum fragments into an unusual Landau levels pattern, characteristic of Dirac fermion confinement. The two-terminal magnetoresistance reveals the onset of magnetoelectronic subbands, edge currents and quantized Hall conductance. We bring evidence that the magnetic confinement at the edges unveils the valley degeneracy lifting originating from the electronic confinement. Quantum simulations suggest some disorder threshold at the origin of mixing between chiral magnetic edge states and disappearance of quantum Hall effect.

Edge magnetotransport fingerprints in disordered graphene nanoribbons

We report on (magneto)-transport experiments in chemically derived narrow graphene nanoribbons under high magnetic fields (up to 60 Tesla). Evidences of field-dependent electronic confinement features are given, and allow estimating the possible ribbon edge symmetry. Besides, the measured large positive magnetoconductance indicates a strong suppression of backscattering induced by the magnetic field. Such scenario is supported by quantum simulations which consider different types of underlying disorders (smooth edge disorder and long range Coulomb scatters).

Band Bending Inversion in Bi2Se3 Nanostructures

Shubnikov-de Haas oscillations were studied under high magnetic field in Bi2Se3 nanostructures grown by chemical vapor transport, for different bulk carrier densities ranging from 3 × 10(19) cm(-3) to 6 × 10(17) cm(-3). The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.

Edge Magneto-Fingerprints in Disordered Graphene Nanoribbons

We report on (magneto)-transport experiments in chemically derived narrow graphene nanoribbons under high magnetic fields (up to 60 Tesla). Evidences of field-dependent electronic confinement features are given, and allow estimating the possible ribbon edge symmetry. Besides, the measured large positive magnetoconductance indicates a strong suppression of backscattering induced by the magnetic field. Such scenario is supported by quantum simulations which consider different types of underlying disorders (smooth edge disorder and long range Coulomb scatters).

Searching for the fractional quantum Hall effect in graphite.

Measurements of basal plane longitudinal rho(b)(B) and Hall rho(H)(B) resistivities were performed on highly oriented pyrolytic graphite samples in a pulsed magnetic field up to B=50 T applied perpendicular to graphene planes, and temperatures 1.5 K<or=T<or=4.2 K. At B>30 T and for all studied samples, we observed a sign change in rho(H)(B) from electron- to holelike. For our best quality sample, the measurements revealed the enhancement in rho(b)(B) for B>34 T (T=1.8 K), presumably associated with the field-driven charge density wave or Wigner crystallization transition. In addition, well-defined plateaus in rho(H)(B) were detected in the ultraquantum limit revealing possible signatures of the fractional quantum Hall effect in graphite.

Anodic bonded graphene

We show how to prepare graphene samples on a glass substrate with the anodic bonding method. In this method, a graphite precursor in flake form is bonded to a glass substrate with the help of an electrostatic field and then cleaved off to leave few layer graphene on the substrate. Now that several methods are available for producing graphene, the relevance of our method is in its simplicity and practicality for producing graphene samples of about 100 µm lateral dimensions. This method is also extensible to other layered materials. We discuss some detailed aspects of the fabrication and results from Raman spectroscopy, local probe microscopy and transport measurements on these samples.

Electron–hole coexistence in disordered graphene probed by high-field magneto-transport

We report on magneto-transport measurement in disordered graphene under a pulsed magnetic field of up to 57 T. For large electron or hole doping, the system displays the expected anomalous integer quantum Hall effect (IQHE) specific to graphene down to the filling factor ν=2. In the close vicinity of the charge neutrality point, the system breaks up into coexisting puddles of holes and electrons, leading to a vanishing Hall and finite longitudinal resistance with no hint of divergence at very high magnetic field. Large resistance fluctuations are observed near the Dirac point. They are interpreted as the natural consequence of the presence of electron and hole puddles. The magnetic field at which the amplitude of the fluctuations is the largest is directly linked to the mean size of the puddles.

Properties of Carbon Nanotubes

After a brief reminder of the basics of carbon nanotubes regarding their morphology, structure, texture, and nanotexture, this chapter attempts to summarize the knowledge gathered on every aspect of their properties as the result of the extensive investigation carried out in this field since the 1990s. The properties covered include electrical, thermal, optical, electronic, and adsorptive (chemical reactivity) completed by a summary of the behavior of carbon nanotubes in biological environment, both from the point of view of eco- and cytotoxicity and that of positive (e.g., therapeutic) interactions. An abundant literature is cited for enabling the reader to deepen any selected topic among those addressed here.

High magnetic field induced charge density waves and sign reversal of the Hall coefficient in graphite.

We report on the investigation of magnetic field induced charge density waves and Hall coefficient sign reversal in a quasi-two-dimensional electronic system of highly oriented pyrolytic graphite under very strong magnetic field. The change of Hall sign coefficient from negative to positive occurs at low temperature and high magnetic field just after the charge density wave transition, suggesting the role of hole-like quasi-particles in this effect. Angular dependent measurements show that the charge density wave transition and Hall sign reversal fields follow the magnetic field component along the c-axis of graphite.

Puddle-Induced Resistance Oscillations in the Breakdown of the Graphene Quantum Hall Effect

We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The ν=2 quantized plateau appears from fields B≃5  T and persists up to B≃80  T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a 1/B periodicity and an anomalous phase, which we relate to the presence of additional electron reservoirs. The high field experimental data suggest that these reservoirs induce a continuous increase of the carrier density up to the highest available magnetic field, thus enlarging the quantum plateaus. These in-plane inhomogeneities, in the form of high carrier density graphene pockets, modulate the quantum Hall effect breakdown and decrease the breakdown current.