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Wang Fangfang

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Publication

Featured researches published by Wang Fangfang.

Archive | 2015

Silicon carbide MOSEFTs (metal-oxide-semiconductor field-effect transistors) power device and manufacturing method therefor

Chai Yiying; Wang Fangfang; Zheng Liu; Tian Liang; Wu Hao; Zhu Yunhui; Xia Jinghua; Liu Rui; Li Yongping; Li Ling; Yang Fei

Archive | 2015

Method for manufacturing grooved silicon carbide MOSFET power device

Yang Fei; Zhu Yunhui; Zheng Liu; Tian Liang; Xia Jinghua; Liu Rui; Zhang Wenting; Wu Hao; Li Ling; Li Yongping; Chai Yiying; Wang Fangfang

Archive | 2017

Preparation method of oxidization film in surface of silicon carbide

Zheng Liu; Yang Fei; Wang Fangfang; Li Ling; Li Yongping; Liu Rui; Wu Hao; Niu Yingxi; Zhang Wenting; Wang Jiaming; Sang Ling

Archive | 2017

A preparation method of a low interface state oxide layer on a silicon carbide surface

Wang Fangfang; Zheng Liu; Yang Fei; Li Ling; Li Yongping; Liu Rui; Tian Liang; Xia Jinghua; Wang Jiaming

Archive | 2017

Preparation method of silicon carbide surface oxidation film

Zheng Liu; Yang Fei; Wang Fangfang; Li Ling; Li Yongping; Zhu Yunhui; Xia Jinghua; Tian Liang; Zha Yiying; Li Jialin

Archive | 2016

Three-dimensional atomic structure model made from 4H-SiC material and having deflection angle of 4 degrees as well as construction method and application therefor

Li Ling; Wang Fangfang; Li Yongping; Zheng Liu; Liu Rui; Xia Jinghua; Tian Liang; Yang Fei

Archive | 2016

Novel bars structure

Yang Fei; Zheng Liu; Wang Fangfang; Li Yongping; Cha Yiying; Niu Yingxi

Archive | 2016

Novel gate structure and manufacture method thereof

Yang Fei; Zheng Liu; Wang Fangfang; Zhu Yunhui; Wu Hao; Wang Jiaming

Archive | 2016

4H-SiC three-dimensional atomic structure model with deflection angle of 8 degrees, construction method therefor and application thereof

Wang Fangfang; Li Ling; Yang Fei; Zheng Liu; Li Yongping; Zhu Yunhui; Wu Hao; Xia Jinghua

Archive | 2016

Novel package and manufacturing method thereof

Yang Fei; Zheng Liu; Wang Fangfang; Li Ling; Xia Jinghua; Tian Liang; Li Jialin

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Collaboration

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