Wang Weibiao

Field Emission Characteristics of BN Films with Cubic-BN Phase

Boron nitride (BN) thin films with cubic boron nitride (c-BN) phase were prepared on the (100)-oriented surface of n-Si (0.008–0.02 Ωm) by rf magnetron sputtering physical vapour deposition. The c-BN content is determined to be around 50% by using Fourier transform infrared spectroscopy for the BN thin films. The field emission characteristics of BN films were measured in an ultrahigh vacuum system. It is found that the field emission of the BN film with c-BN phase is evidently more excellent than that without c-BN phase. A turn-on field of 5 V/μm and a current of 460 μA/cm2 were obtained for the BN film with c-BN phase. The Fowler–Nordheim plots of emission characteristics of BN films indicate a straight line, which suggests the presence of the FN tunnelling.

Fabrication and electron emission of carbon microtubes

This study introduced a kind of carbon microtubes. These materials have some different properties with carbon nanotubes and the density is lower than carbon nanotube bundles. These carbon microtubes are directly synthesized by liquidoid epitaxy method on silicon substrates at low temperature. The field emission properties of carbon microtubes were also determined.

Electron emission of carbon nanonets

In this paper, a kind of carbon nanonet and its field emission properties were introduced. They had similar properties with carbon nanotubes, but density was lower than carbon nanotubes bundles. These carbon nanotubes were directly synthesized by liquidoid epitaxy method on silicon substrates at low temperature.

Electron emission of carbon nanotube synthesized by liquidoid epitaxy

It is shown in this paper that liquidoid synthesis of carbon nanotube film is a simple method to produce thin film cold cathode material, and that the carbon nanotube films have better field emission properties.

The field emission properties of epitaxial diamond film

In this research, synthetic diamond nano-grits was deposited onto substrate by electrophoretic method and then grow diamond layer again on diamond nano-grits by epitaxy. The aim is to improve emission uniformity of diamond emitter.

Internal field emission study of aluminum base field emitter

The internal field emission of aluminum base field emitter was an old topic which its emission property shows some negative-resistance phenomena. Although its emission mechanism was not fully clear, we thought its applied grid voltage was lower and easy to control, also its fabrication process was simple. If emission current of this kind emitter to anode increased, maybe it could get application in field emission display. For this reason, we try to explore the way to improve emission ability of the emitter.

Field emission performance of diamond film with grid

Field emission display (FED) is a new flat panel display technology, but a basic problem in development of FED is the material choice for cold cathode. Diamond material as a candidate is idea for FED because it has almost best hardness, chemical stability, high thermal conductivity and lower even negative affinity. Although its emission mechanism is not understand, there are lots of researcher studied it. In the research, we fabricated the triode structure devices of diamond thin film cold cathode and measured their emission performance in vacuum chamber.