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Dive into the research topics where Wang Zhanguo is active.

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Featured researches published by Wang Zhanguo.


Chinese Physics Letters | 2007

Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by photoluminescence and x-ray photoelectron spectroscopy

Fan Hai-Bo; Yang Shaoyan; Zhang Pan-Feng; Wei Hongyuan; Liu Xianglin; Jiao Chunmei; Zhu Qin-Sheng; Chen Yonghai; Wang Zhanguo

ZnO films prepared at different temperatures and annealed at 900 degrees C in oxygen are studied by photoluminescence (PL) and x-ray photoelection spectroscopy (XPS). It is observed that in the PL of the as-grown films the green luminescence (GL) and the yellow luminescence (YL) are related, and after annealing the GL is restrained and the YL is enhanced. The O 1s XPS results also show the coexistence of oxygen vacancy (Vo) and interstitial oxygen (O-i) before annealing and the quenching of the V-o after annealing. By combining the two results it is deduced that the GL and YL are related to the V-o and O-i defects, respectively.


Chinese Physics Letters | 2001

Growth and Photoluminescence of Epitaxial CeO2 Film on Si (111) Substrate

Gao Fei; Lv Guo-Hua; Zhang Jian-Hui; Qin Fuguang; Yao Zhenyu; Liu Zhikai; Wang Zhanguo; Lin Lanying

A CeO2 film with a thickness of about 80nm was deposited by a mass-analysed low-energy dual ion beam deposition technique on an Si(111) substrate. Reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal. The tetravalent state of Ce in the film was confirmed by x-ray photoelectron spectroscopy measurements, indicating that stoichiometric CeO2 was formed. Violet/blue light emission (379.5 nm) was observed at room temperature, which may be tentatively explained by charge transitions from the 4f band to the valence band of CeO2.


Chinese Physics Letters | 2000

Photoluminescence of Eu2+ doped ZnS nanocrystals

Liu Shu-Man; Guo Hai-Qing; Zhang Zhihua; Liu Fengqi; Wang Zhanguo

Eu2+ doped ZnS nanocrystals exhibit new luminescence properties because of the enlarged energy gap of nanocrystalline ZnS host due to quantum confinement effects. Photoluminescence emission at about 520 nm from Eu2+ doped ZnS nanocrystals at room temperature is investigated by using photoluminescence emission and excitation spectroscopy. Such green emission with long lifetime (ms) is proposed to be a result of excitation, ionization, carriers recapture and recombination via Eu2+ centers in nanocrystalline ZnS host.


Chinese Physics Letters | 2005

Evidence of ultrafast energy exchange-induced soft'mode of phonons and lattice instability: a nanotime effect

Zhu Xian-Fang; Wang Zhanguo

With a series of supportive experimental phenomena as induced by ion beam bombardment, energetic beaminduced athermal activation process in Si is demonstrated. This is correlated with phenomena induced by ultrafast energy exchange in condensed matter in general. A critical modelling is presented on the above process and a universal concept: the ultrafast energy exchange-induced soft mode of phonons and the lattice instability in condensed matter are proposed.


Chinese Physics Letters | 2011

Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell

Deng Qingwen; Wang Xiaoliang; Yang Cui-Bai; Xiao Hongling; Wang Cuimei; Yin Haibo; Hou Qifeng; Bi Yang; Li Jin-Min; Wang Zhanguo; Hou Xun

An InxGa1−xN/InN quantum-dot intermediate-band solar cell is calculated by means of solving the Schrodinger equation according to the Kronig—Penney model. Based on particular assumptions, the power conversion efficiency is worked out. The results reveal that the InxGa1−xN/InN quantum-dot intermediate-band solar cell manifests much larger power conversion efficiency than that of p-n junction solar cells, and the power conversion efficiency strongly depends on the size of the quantum dot and the interdot distance.


Journal of Semiconductors | 2015

Free-space communication based on quantum cascade laser*

Liu Chuanwei; Zhai Shenqiang; Zhang Jinchuan; Zhou Yuhong; Jia Zhiwei; Liu Fengqi; Wang Zhanguo

A free-space communication based on a mid-infrared quantum cascade laser (QCL) is presented. A room-temperature continuous-wave distributed-feedback (DFB) QCL combined with a mid-infrared detector comprise the basic unit of the communication system. Sinusoidal signals at a highest frequency of 40 MHz and modulated video signals with a carrier frequency of 30 MHz were successfully transmitted with this experimental setup. Our research has provided a proof-of-concept demonstration of space optical communication application with QCL. The highest operation frequency of our setup was determined by the circuit-limited modulation bandwidth. A high performance communication system can be obtained with improved modulation circuit system.


Chinese Physics Letters | 2009

Structural and Magnetic Properties of Sm Implanted GaN

Jiang Lijuan; Wang Xiaoliang; Xiao Hongling; Wang Zhanguo; Feng Chun; Zhang Ming-Lan; Tang Jian

The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are investigated. XRD results do not show any peaks associated with second phase formation. Magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering temperature above room temperature in all the implanted samples, while the effective magnetic moment per Sm obtained from saturation magnetization gives a much higher value than the atomic moment of Sm. These results could be explained by the phenomenological model proposed by Dhar et al. [Phys. Rev. Lett. 94(2005) 037205, Phys. Rev. B 72(2005) 245203] in terms of a long-range spin polarization of the GaN matrix by the Sm atoms.


Chinese Physics Letters | 2010

Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy

Guo Yan; Liu Xianglin; Song Hua-Ping; Yang Anli; Zheng Gao-Lin; Wei Hongyuan; Yang Shaoyan; Zhu Qin-Sheng; Wang Zhanguo

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 +/- 0.19 eV, according to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V : Delta E-C = E-g(GaN) - E-g(Ge) - Delta E-V, and taking the room-temperature band-gaps as 3.4 and 0.67 eV for GaN and Ge, respectively. The conduction band offset is deduced to be 1.6 +/- 0.19 eV, which indicates a type-I band alignment for GaN/Ge. Accurate determination of the valence and conduction band offsets is important for the use of GaN/Ge based devices.


Chinese Physics Letters | 1997

Optical Anisotropy of InAs Monolayer in (311)-Oriented GaAs Matrix

Y. H. Chen; Z. Yang; Xu Bo; Wang Zhanguo; Liang Ji-Ben

In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in (311)-oriented GaAs matrix is observed by reflectance difference spectroscopy. The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots. The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of (311) orientation quantum wells, indicating that there is little structural or strain anisotropy of the InAs layer grown on (311)-oriented GaAs surface.


Chinese Physics Letters | 2013

Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH4-C2H4-H2 System

Liu Bin; Sun Guosheng; Liu Xingfang; Zhang Feng; Dong Lin; Zheng Liu; Yan Guoguo; Liu Shengbei; Zhao Wanshun; Wang Lei; Zeng Yiping; Li Xiguang; Wang Zhanguo; Yang Fei

Homoepitaxial growth of 4H-SiC epilayers is conducted in a SiH4-C2H4-H2 system by low pressure hot-wall vertical chemical vapor deposition (CVD). Thick epilayers of 45 μm are achieved at a high growth rate up to 26 μm/h under an optimized growth condition, and are characterized by using a Normaski optical microscope, a scanning electronic microscope (SEM), an atomic force microscope (AFM) and an x-ray diffractometer (XRD), indicating good crystalline quality with mirror-like smooth surfaces and an rms roughness of 0.9 nm in a 5 μm × 5μm area. The dependence of the 4H-SiC growth rate on growth conditions on 4° off-axis 4H-SiC substrates and its mechanism are investigated. It is found that the H2 flow rate could influence the surface roughness, while good surface morphologies without Si droplets and epitaxial defects such as triangular defects could be obtained by increasing temperature.

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Liu Fengqi

Chinese Academy of Sciences

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Liu Junqi

Chinese Academy of Sciences

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Jin Peng

Chinese Academy of Sciences

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Zhang Jinchuan

Chinese Academy of Sciences

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Wang Lijun

Chinese Academy of Sciences

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Xu Bo

Chinese Academy of Sciences

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Yang Shaoyan

Chinese Academy of Sciences

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Qu Shengchun

Chinese Academy of Sciences

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Liu Xianglin

Chinese Academy of Sciences

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Wang Xiaoliang

Chinese Academy of Sciences

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