Wanhua Zheng

Integration of a photonic crystal polarization beam splitter and waveguide bend

In this work, we present the design of an integrated photonic-crystal polarization beam splitter (PC-PBS) and a low-loss photonic-crystal 60 degrees waveguide bend. Firstly, the modal properties of the PC-PBS and the mechanism of the low-loss waveguide bend are investigated by the two-dimensional finite-difference time-domain (FDTD) method, and then the integration of the two devices is studied. It shows that, although the individual devices perform well separately, the performance of the integrated circuit is poor due to the multi-mode property of the PC-PBS. By introducing deformed airhole structures, a single-mode PC-PBS is proposed, which significantly enhance the performance of the circuit with the extinction ratios remaining above 20 dB for both transverse-electric (TE) and transverse-magnetic (TM) polarizations. Both the specific result and the general idea of integration design are promising in the photonic crystal integrated circuits in the future.

Reduced divergence angle of photonic crystal vertical-cavity surface-emitting laser

The reduced divergence angle of the photonic crystal vertical-cavity surface-emitting laser (PC-VCSEL) was investigated in both theory and experiment. The photonic crystal waveguide possessed the weakly guiding waveguide characteristic, which accounted for the reduction of the divergence angle. The three-dimensional finite-difference time-domain method was used to simulate the designed PC-VCSEL, and a calculated divergence angle of 5.2° was obtained. The measured divergence angles of our fabricated PC-VCSEL were between 5.1° and 5.5° over the entire drive current range, consistent with the numerical results. This is the lowest divergence angle of the fabricated PC-VCSEL ever reported.

Photonic crystal self-collimation sensor

A novel refractive index sensor based on the two dimensional photonic crystal folded Michelson interferometer employing the self-collimation effect is proposed and its performances are theoretically investigated. Two sensing areas are included in the sensor. Simulation results indicate the branch area is suitable for the small index variety range and fine detection, whereas the reflector area prone to the large index change range and coarse detection. Because of no defect waveguides and no crosstalk of signal, the sensor is desirable to perform monolithic integrated, low-cost, label-free real-time parallel sensing. In addition, a flexible design of self-collimation sensors array is demonstrated.

Polarization-insensitive subwavelength grating reflector based on a semiconductor-insulatormetal structure

We present a polarization-insensitive subwavelength grating reflector based on a semiconductor-insulator-metal structure. The polarization-insensitive characteristic originates from the combined effect of the TM-polarized high-reflectivity high-index-contrast subwavelength grating and the TE-polarized metallic (Au) subwavelength grating with the addition of the insulator layer. The overlapped high reflectivity (>99.5%) bandwidth between the transverse electric polarization and the transverse magnetic polarization is 89 nm. This polarization-insensitive subwavelength grating reflector can be used in the applications without a preferred polarization.

MULTIPLE PEAK PHOTOLUMINESCENCE OF POROUS SILICON

The photoluminescence (PL) response of porous silicon is usually in the form of a single broad peak. Recently, however, PL response with two peaks has been reported. Here we report the observation of multiple peaks in the PL spectrum of porous silicon. A simple modeling of the line shape indicates that four peaks exist within the response curve, and analysis suggests that the PL of porous silicon is derived from quantum confinement in the silicon crystallites. The line shapes can be due to either minibands within the conduction and valence bands or crystallite size variation or a combination of the two.

Mode Analysis and Design of a Low-Loss Photonic Crystal 60

The guided modes of a two-dimensional photonic crystal straight waveguide and a waveguide bend are studied in order to find the high transmission mechanism for the waveguide bend. We find that high transmission occurs when the mode patterns and wave numbers match, while the single-mode condition in the waveguide bend is not necessarily required. According to the mechanism, a simply modified bend structure with broad high transmission band is proposed. The bandwidth is significantly increased from 19 to 116 nm with transmission above 90%, and covers the entire C band of optical communication.

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High-power low-vertical-divergence laser diodes based on the longitudinal photonic band crystal (PBC) concept are investigated at a wavelength of 900 nm. The thicknesses of the layers in the longitudinal PBC waveguide are prudently optimized by mode analysis, and the lowest vertical far-field angle is found to be achieved by mode coupling. A self-consistent model is also utilized to study the device performances in detail, which shows excellent optical properties without obvious electronic performance degradation. In the experiment, continuous wave power up to 1 W/facet and vertical far-field angles of less than 10° (full-width at half-maximum) and ~50° (with 95% power content) are achieved simultaneously, with epitaxial wafer containing PBC layers of ten periods. The agreement among the design, simulation, and experiment shows a bright prospect for further reduced vertical divergence angle with high power output.

Waveguide Bend

In this paper, a III-V/Silicon hybrid single mode laser operating at a long wavelength for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator wafer directly. The novel mode selected mechanism based on a slotted silicon waveguide is applied, which only need standard photolithography in the whole technological process. The side mode suppression ratio of larger than 20dB is obtained from experiments.

Design and Analysis of Laser Diodes Based on the Longitudinal Photonic Band Crystal Concept for High Power and Narrow Vertical Divergence

A lateral cavity photonic crystal (PhC) surface-emitting laser is realized on a commercial epitaxial waveguide wafer without a distributed Bragg reflector first. Energy is coupled from the lateral resonance to surface-emitting light through the Γ band edge of the PhC with a square lattice. Electrically driven 1553.8 nm surface-emitting lasing action is observed at room temperature. The threshold current density of 667 A/cm2 is ultralow for the surface-emitting laser.

A hybrid silicon single mode laser with a slotted feedback structure

In this Letter, a III-V/silicon hybrid single-mode laser operating at C band for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator through wafer to wafer directly. The mode selected mechanism based on a hybrid III-V/silicon straight cavity with periodic microstructures is applied, which only need low cost i-line projection photolithography in the whole technological process. At room temperature, we obtain 0.62 mW output power in continuous-wave. The side mode suppression ratio of larger than 20 dB is obtained from experiments. [corrected].