Wanxiang Feng

Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides.

We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials. The spin-valley coupling at the valence-band edges suppresses spin and valley relaxation, as flip of each index alone is forbidden by the valley-contrasting spin splitting. Valley Hall and spin Hall effects coexist in both electron-doped and hole-doped systems. Optical interband transitions have frequency-dependent polarization selection rules which allow selective photoexcitation of carriers with various combination of valley and spin indices. Photoinduced spin Hall and valley Hall effects can generate long lived spin and valley accumulations on sample boundaries. The physics discussed here provides a route towards the integration of valleytronics and spintronics in multivalley materials with strong spin-orbit coupling and inversion symmetry breaking.

Quantum spin Hall effect in silicene and two-dimensional germanium.

We investigate the spin-orbit opened energy gap and the band topology in recently synthesized silicene as well as two-dimensional low-buckled honeycomb structures of germanium using first-principles calculations. We demonstrate that silicene with topologically nontrivial electronic structures can realize the quantum spin Hall effect (QSHE) by exploiting adiabatic continuity and the direct calculation of the Z(2) topological invariant. We predict that the QSHE can be observed in an experimentally accessible low temperature regime in silicene with the spin-orbit band gap of 1.55 meV, much higher than that of graphene. Furthermore, we find that the gap will increase to 2.9 meV under certain pressure strain. Finally, we also study germanium with a similar low-buckled stable structure, and predict that spin-orbit coupling opens a band gap of 23.9 meV, much higher than the liquid nitrogen temperature.

Quantum anomalous Hall effect in graphene from Rashba and exchange effects

We investigate the possibility of realizing quantum anomalous Hall effect in graphene. We show that a bulk energy gap can be opened in the presence of both Rashba spin-orbit coupling and an exchange field. We calculate the Berry curvature distribution and find a nonzero Chern number for the valence bands and demonstrate the existence of gapless edge states. Inspired by this finding, we also study, by first-principles method, a concrete example of graphene with Fe atoms adsorbed on top, obtaining the same result.

Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators

Using first-principles calculations within density functional theory, we explore the feasibility of converting ternary half-Heusler compounds into a new class of three-dimensional topological insulators (3DTI). We demonstrate that the electronic structure of unstrained LaPtBi as a prototype system exhibits a distinct band-inversion feature. The 3DTI phase is realized by applying a uniaxial strain along the [001] direction, which opens a band gap while preserving the inverted band order. A definitive proof of the strained LaPtBi as a 3DTI is provided by directly calculating the topological Z2 invariants in systems without inversion symmetry. We discuss the implications of the present study to other half-Heusler compounds as 3DTI, which, together with the magnetic and superconducting properties of these materials, may provide a rich platform for novel quantum phenomena.

Engineering quantum anomalous/valley Hall states in graphene via metal-atom adsorption: An ab-initio study

We systematically investigate the magnetic and electronic properties of graphene adsorbed with diluted 3d-transition and noble metal atoms using first principles calculation methods. We find that most transition metal atoms (i.e. Sc, Ti, V, Mn, Fe) favor the hollow adsorption site, and the interaction between magnetic adatoms and \pi-orbital of graphene induces sizable exchange field and Rashba spin-orbit coupling, which together open a nontrivial bulk gap near the Dirac points leading to the quantum-anomalous Hall effect. We also find that the noble metal atoms (i.e. Cu, Ag, Au) prefer the top adsorption site, and the dominant inequality of the AB sublattice potential opens another kind of nontrivial bulk gap exhibiting the quantum-valley Hall effect.

Half-Heusler topological insulators: A first-principles study with the Tran-Blaha modified Becke-Johnson density functional

We systematically investigate the topological band structures of half-Heusler compounds using first-principles calculations. The modified Becke-Johnson exchange potential together with local-density approximation for the correlation potential (MBJLDA) has been used here to obtain accurate band inversion strength and band order. Our results show that a large number of half-Heusler compounds are candidates for three-dimensional topological insulators. The difference between band structures obtained using the LDA and MBJLDA potential is also discussed.

Three-dimensional topological insulators in I-III-VI2 and II-IV-V2 chalcopyrite semiconductors.

Using first-principles calculations within density functional theory, we investigate the band topology of ternary chalcopyrites of composition I-III-VI2 and II-IV-V2. By exploiting adiabatic continuity of their band structures to the binary 3D-HgTe, combined with direct evaluation of the Z2 topological invariant, we show that a large number of chalcopyrites can realize the topological insulating phase in their native states. The ability to host room-temperature ferromagnetism in the same chalcopyrite family makes them appealing candidates for novel spintronics devices.

Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

Polarization-modulated resistive switching and fatigue behaviors of the Ag/La0.1Bi0.9FeO3/La0.7Sr0.3MnO3 capacitors have been investigated. The device resistance is found to show a V-shaped dependence on poling voltage, and the lowest resistance appears at the voltage corresponding to the coercive field of La0.1Bi0.9FeO3. Based on this relation, three distinct resistance states can be achieved by applying appropriate pulse trains, which manifests a potential application in high-density storage technology. The fatigue properties of the sample under repeated bipolar or unipolar pulses were further analyzed. Bipolar pulses enhance the rectifying characters of the current-voltage relation, whereas unipolar pulses produce a reverse effect. Based on impedance analysis, we propose the formation of leakage paths along conductive domain walls, and it is the domain reconstruction during repeated polarization flipping that results in the complex transport behavior observed

Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi4Br4

Quantum spin Hall (QSH) insulators have gapless topological edge states inside the bulk band gap, which can serve as dissipationless spin current channels. The major challenge currently is to find suitable materials for this topological state. Here, we predict a new large-gap QSH insulator with bulk direct band gap of ∼ 0.18 eV, in single-layer Bi4Br4, which could be exfoliated from its three-dimensional bulk material due to the weakly bonded layered structure. The band gap of single-layer Bi4Br4 is tunable via strain engineering, and the QSH phase is robust against external strain. Moreover, because this material consists of special one-dimensional molecular chain as its basic building block, the single layer Bi4Br4 could be torn to ribbons with clean and atomically sharp edges. These nanoribbons, which have single-Dirac-cone edge states crossing the bulk band gap, are ideal wires for dissipationless transport. Our work thus provides a new promising material for experimental studies and practical applications of the QSH effect.

The optical properties of ZnO hexagonal prisms grown from poly (vinylpyrrolidone)-assisted electrochemical assembly onto Si(111) substrate

ZnO hexagonal prisms have been grown from poly (vinylpyrrolidone)-assisted electrochemical assembly onto p-type Si (111) substrate. These ZnO prisms arrays are highly (0002) orientated. The (0001) end facets and {1010} side facets of the hexagonal prisms are well defined. The photoluminescence (PL) spectrum of these ZnO prisms shows an intense ultraviolet near band-gap emission with a full width at half maximum of 86 meV at room temperature. The low-temperature PL spectrum is split into well-resolved free and bound exciton emission lines. The temperature dependence of the exciton emission intensities shows a nonmonotonic decaying behavior, which can be explained by the existence of interfacial states.