Watanabe Kazuo

Oxygen ion implantation into both heavily doped n+- and p+-GaAs for isolation

Abstract Oxygen ion implantation into GaAs has been investigated as a function of ion dose (1013−4 × 1015/cm2) and post-implantation annealing temperature (100–700°C). Singly and doubly ionized oxygen atoms are implanted into both heavily doped n+ Sn-doped, 1 × 1019/cm3- and p+ Be-doped, 2 × 1019/cm3−GaAs. The isolation regions with high resistivity of 108−109 Ω/□ are completely formed in both n+- and p+-GaAs by implantation at a dose range of 1015/cm2 followed by annealing at 500 to 550°C for 10 min. The initial high resistivity in the n+- and p+-GaAs remains stable for more than 4000 h in a 200°C atmosphere. It is found that the compensation center levels, which are more or less induced by implantation damage, remain stable over long-term aging. It was also found that diffusion of implanted oxygen atoms was very small and hardly detectable by SIMS analysis in the samples annealed at less than 700°C.