Wei-Hsiang Lin

Single-step deposition of high-mobility graphene at reduced temperatures

Current methods of chemical vapour deposition (CVD) of graphene on copper are complicated by multiple processing steps and by high temperatures required in both preparing the copper and inducing subsequent film growth. Here we demonstrate a plasma-enhanced CVD chemistry that enables the entire process to take place in a single step, at reduced temperatures (<420 °C), and in a matter of minutes. Growth on copper foils is found to nucleate from arrays of well-aligned domains, and the ensuing films possess sub-nanometre smoothness, excellent crystalline quality, low strain, few defects and room-temperature electrical mobility up to (6.0±1.0) × 10(4) cm(2) V(-1) s(-1), better than that of large, single-crystalline graphene derived from thermal CVD growth. These results indicate that elevated temperatures and crystalline substrates are not necessary for synthesizing high-quality graphene.

A Direct and Polymer-Free Method for Transferring Graphene Grown by Chemical Vapor Deposition to Any Substrate

We demonstrate a polymer-free method that can routinely transfer relatively large-area graphene to any substrate with advanced electrical properties and superior atomic and chemical structures as compared to the graphene sheets transferred with conventional polymer-assisted methods. The graphene films that are transferred with polymer-free method show high electrical conductance and excellent optical transmittance. Raman spectroscopy and X-ray/ultraviolet photoelectron spectroscopy also confirm the presence of high quality graphene sheets with little contamination after transfer. Atom-resolved images can be obtained using scanning tunneling microscope on as-transferred graphene sheets without additional cleaning process. The mobility of the polymer-free graphene monolayer is as high as 63,000 cm(2) V(-1) s(-1), which is 50% higher than the similar sample transferred with the conventional method. More importantly, this method allows us to place graphene directly on top of devices made of soft materials, such as organic and polymeric thin films, which widens the applications of graphene in soft electronics.

Graphene Anodes and Cathodes: Tuning the Work Function of Graphene by Nearly 2 eV with an Aqueous Intercalation Process

To expand the applications of graphene in optoelectronics and microelectronics, simple and effective doping processes need to be developed. In this paper, we demonstrate an aqueous process that can simultaneously transfer chemical vapor deposition grown graphene from Cu to other substrates and produce stacked graphene/dopant intercalation films with tunable work functions, which differs significantly from conventional doping methods using vacuum evaporation or spin-coating processes. The work function of graphene layers can be tuned from 3.25 to 5.10 eV, which practically covers the wide range of the anode and cathode applications. Doped graphene films in intercalation structures also exhibit excellent transparency and low resistance. The polymer-based solar cells with either low work function graphene as cathodes or high work function graphene as anodes are demonstrated.