Wei Lu

High‐Responsivity Graphene/InAs Nanowire Heterojunction Near‐Infrared Photodetectors with Distinct Photocurrent On/Off Ratios

Graphene is a promising candidate material for high-speed and ultra-broadband photodetectors. However, graphene-based photodetectors suffer from low photoreponsivity and I(light)/I(dark) ratios due to their negligible-gap nature and small optical absorption. Here, a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector is reported, with a large photoresponsivity of 0.5 AW(-1) and I(light)/I(dark) ratio of 5 × 10(2), while the photoresponsivity and I(light)/I(dark) ratio of graphene infrared photodetectors are 0.1 mAW(-1) and 1, respectively. The Fermi level (E(F)) of graphene can be widely tuned by the gate voltage owing to its 2D nature. As a result, the back-gated bias can modulate the Schottky barrier (SB) height at the interface between graphene and InAs NWs. Simulations further demonstrate the rectification behavior of graphene/InAs NW heterojunctions and the tunable SB controls charge transport across the vertically stacked heterostructure. The results address key challenges for graphene-based infrared detectors, and are promising for the development of graphene electronic and optoelectronic applications.

A multi-responsive hydrogel with a triple shape memory effect based on reversible switches

A novel multi-responsive shape memory hydrogel is described. The hydrogel shows multi-responsive shape memory performance and a programmable triple shape memory effect based on dual multi-responsive reversible switches, which will inspire the design and fabrication of novel shape memory systems.

Highly Sensitive and Wide-Band Tunable Terahertz Response of Plasma Waves Based on Graphene Field Effect Transistors

Terahertz (THz) technology is becoming a spotlight of scientific interest due to its promising myriad applications including imaging, spectroscopy, industry control and communication. However, one of the major bottlenecks for advancing this field is due to lack of well-developed solid-state sources and detectors operating at THz gap which serves to mark the boundary between electronics and photonics. Here, we demonstrate exceptionally wide tunable terahertz plasma-wave excitation can be realized in the channel of micrometer-level graphene field effect transistors (FET). Owing to the intrinsic high propagation velocity of plasma waves (>~108u2005cm/s) and Dirac band structure, the plasma-wave graphene-FETs yield promising prospects for fast sensing, THz detection, etc. The results indicate that the multiple guide-wave resonances in the graphene sheets can lead to the deep sub-wavelength confinement of terahertz wave and with Q-factor orders of magnitude higher than that of conventional 2DEG system at room temperature. Rooted in this understanding, the performance trade-off among signal attenuation, broadband operation, on-chip integrability can be avoided in future THz smart photonic network system by merging photonics and electronics. The unique properties presented can open up the exciting routes to compact solid state tunable THz detectors, filters, and wide band subwavelength imaging based on the graphene-FETs.

Tuning indium tin oxide work function with solution-processed alkali carbonate interfacial layers for high-efficiency inverted organic photovoltaic cells.

Selective electron collection by an interfacial layer modified indium tin oxide cathode is critically important for achieving high-efficiency inverted structure organic photovoltaic (OPV) cells. Here, we demonstrate that solution-processed alkali carbonates, such as Li2CO3, Na2CO3, K2CO3, Rb2CO3, Cs2CO3, are good interfacial layer materials. Both carbonate concentration and annealing conditions can affect cathode work function and surface roughness. By proper optimization, different alkali carbonates can be almost equally effective as the cathode interfacial layer. Furthermore, good device performance can be achieved at a low annealing temperature (<50u2009° C), which allows for potential applications in solution-processed inverted OPV cells on plastic substrates. This work indicates that alkali carbonates, not just cesium carbonate, are valid choices as the cathode interlayer in inverted OPV devices.

Spectrum Analysis of 2-D Plasmon in GaN-Based High Electron Mobility Transistors

We have investigated terahertz (THz) resonant absorption spectra in grating-gate GaN high electron mobility transistors. The results indicate that both the symmetrical plasmon mode and the asymmetrical plasmon mode play an important role in the strong absorption of THz waves. The excitation process and dynamic response of these plasmons are investigated in detail. Our results also indicate that the asymmetrical plasmon is induced by the surface polarization field of the electrodes and the resonant strength of this plasmon is reduced significantly by the decay of the polarization field. Variations in the resonant strength of the plasmonic peaks are consistent with the surface resonant layer model showing that the method we used can be utilized for the study of coupling between THz radiation and plasmons in the channel. In order to achieve wider tunability, more advanced device structures can be explored such as a device that contains double channel layers, in which complicated plasmons can be excited.

The resonant tunability, enhancement, and damping of plasma waves in the two-dimensional electron gas plasmonic crystals at terahertz frequencies

The ability to manipulate plasma waves in the two-dimensional-(2D)-electron-gas based plasmonic crystals is investigated in this work. It is demonstrated that the plasmon resonance of 2D plasmonic crystal can be tuned easily at terahertz frequency due to the wavevector quantization induced by the size effect. After calculating self-consistently by taking into account several potential mechanisms for the resonant damping of plasma waves, it can be concluded that the plasmon-plasmon scattering plays the dominant role. Based on the calculations, we can predict the scattering or inter-excitation among the oblique plasmons in the 2D crystal. The results can be extended to study 2D-electron-gas plasmonic waveguides, terahertz modulators, and detectors with electrostatic gating.

Tailoring Active Far-Infrared Resonator with Graphene Metasurface and Its Complementary

Far-infrared part of electromagnetic spectrum and its technological details have been highly sought after due to its myriad applications including imaging, spectroscopy, industry control, and communication. However, lack of efficient components of electronic and photonic sources/detectors working in this particular spectrum has impeded its widespread application. One of the bottlenecks lies in the compact far-infrared polarization-sensitive resonator/modulator in compatible with pixel-detector for far-infrared spectroscopy. In this work, we demonstrate strong electric resonance response in perforated graphene sheet at this particular electromagnetic region. The results demonstrate inherently different natures for the strong electromagnetic response between graphene-based and metallic metamaterials. Unlike the metallic metamaterials relying on the geometrical inductance for magnetic response, the electric resonance caused by localized dipole/multipolar modes is found to be dominated in graphene and thus enabling sub-wavelength confinement of electromagnetic field. The Babinet’s principle is proposed to be applied for broadband far-infrared modulation and resonant filters design of graphene-based metamaterial. The active tunable electric resonance through electrostatic doping on the graphene-based patterns provides efficient route for compact biosensing, far-infrared imaging, and detection.

Intrinsic photo-conductance triggered by the plasmonic effect in graphene for terahertz detection

Terahertz (THz) technology is becoming more eminent for applications in diverse areas including biomedical imaging, communication, security and astronomy. However, THz detection still has some challenges due to the lack of sources and detectors despite decades of considerable effort. The appearance of graphene and its gapless spectrum enable their applications in sensitive detection of light over a very wide energy spectrum from ultraviolet, infrared to terahertz. Several mechanisms in graphene for THz detection have been proposed, such as photo-thermoelectric, Dyakonov-Shur (DS) and bolometric effects. Here, we propose a photoconductive mechanism assisted by plasma wave in a graphene field-effect transistor (FET). Sensitive response to THz radiation can be realized far below the interband transition at room temperature. The response is due to the contributions of both plasma drag and convection effects. The two effects can both trigger multiple potential wells along the channel, which are different from other quantum-transition mechanisms. The photoconductive effects can be explored in both periodic and non-periodic systems and can be substantially enhanced under the electric field. They could reduce the burden of structural complexity compared to other mechanisms like unilateral thermoelectric and DS detection. This paves the way forxa0more judicious photo-detector design for versatile THz applications.