Wei Meng Lim

Design and Optimization of the Extended True Single-Phase Clock-Based Prescaler

The power consumption and operating frequency of the extended true single-phase clock (E-TSPC)-based frequency divider is investigated. The short-circuit power and the switching power in the E-TSPC-based divider are calculated and simulated. A low-power divide-by-2/3 unit of a prescaler is proposed and implemented using a CMOS technology. Compared with the existing design, a 25% reduction of power consumption is achieved. A divide-by-8/9 dual-modulus prescaler implemented with this divide-by-2/3 unit using a 0.18-mum CMOS process is capable of operating up to 4 GHz with a low-power consumption. The prescaler is implemented in low-power high-resolution frequency dividers for wireless local area network applications

A Low-Noise Multi-GHz CMOS Multiloop Ring Oscillator With Coarse and Fine Frequency Tuning

A 7-GHz CMOS voltage controlled ring oscillator that employs multiloop technique for frequency boosting is presented in this paper. The circuit permits lower tuning gain through the use of coarse/fine frequency control. The lower tuning gain also translates into a lower sensitivity to the voltage at the control lines. Fabricated in a standard 0.13-mum CMOS process, the proposed voltage-controlled ring oscillator exhibits a low phase noise of -103.4 dBc/Hz at 1 MHz offset from the center frequency of 7.64 GHz, while consuming a current of 40 mA excluding the buffer.

Design and Analysis of Ultra Low Power True Single Phase Clock CMOS 2/3 Prescaler

In this paper the power consumption and operating frequency of true single phase clock (TSPC) and extended true single phase clock (E-TSPC) frequency prescalers are investigated. Based on this study a new low power and improved speed TSPC 2/3 prescaler is proposed which is silicon verified. Compared with the existing TSPC architectures the proposed 2/3 prescaler is capable of operating up to 5 GHz and ideally, a 67% reduction of power consumption is achieved when compared under the same technology at supply voltage of 1.8 V. This extremely low power consumption is achieved by radically decreasing the sizes of transistors, reducing the number of switching stages and blocking the power supply to one of the D flip-flops (DFF) during Divide-by-2 operation. A divide-by-32/33 dual modulus prescaler implemented with this 2/3 prescaler using a chartered 0.18 ¿m CMOS technology is capable of operating up to 4.5 GHz with a power consumption of 1.4 mW.

Broad-Band Design Techniques for Transimpedance Amplifiers

In this paper, a novel bandwidth enhancement technique based on the combination of capacitive degeneration, broad-band matching network, and the regulated cascode (RGC) input stage is proposed and analyzed, which turns the transimpedance amplifier (TIA) design into a fifth-order low-pass filter with Butterworth response. This broad-band design methodology for TIAs is presented with an example implemented in CHRT 0.18-mum 1.8-V RF CMOS technology. Measurement data shows a -3-dB bandwidth of about 8 GHz with 0.25-pF photodiode capacitance. Comparing with the core RGC TIA without capacitive degeneration and broad-band matching network, this design achieves an overall bandwidth enhancement ratio of 3.6 with very small gain ripple. The transimpedance gain is 53 dBOmega with a group delay of 80plusmn20 ps. The chip consumes only 13.5-mW dc power and the measured average input-referred noise current spectral density is 18 pA/radicHz up to 10 GHz

Design of a CMOS Broadband Transimpedance Amplifier With Active Feedback

In this paper, a novel current-mode transimpedance amplifier (TIA) exploiting the common gate input stage with common source active feedback has been realized in CHRT 0.18 ¿m -1.8 V RFCMOS technology. The proposed active feedback TIA input stage is able to achieve a low input impedance similar to that of the well-known regulated cascode (RGC) topology. The proposed TIA also employs series inductive peaking and capacitive degeneration techniques to enhance the bandwidth and the gain. The measured transimpedance gain is 54.6 dB¿ with a -3 dB bandwidth of about 7 GHz for a total input parasitic capacitance of 0.3 pF. The measured average input referred noise current spectral density is about 17.5 pA/¿{Hz} up to 7 GHz. The measured group delay is within 65 ± 10 ps over the bandwidth of interest. The chip consumes 18.6 mW DC power from a single 1.8 V supply. The mathematical analysis of the proposed TIA is presented together with a detailed noise analysis based on the van der Ziel MOSFET noise model. The effect of the induced gate noise in a broadband TIA is included.

A 1.8-V 2.4/5.15-GHz dual-band LCVCO in 0.18-/spl mu/m CMOS technology

A dual band, fully integrated, low phase-noise and low-power LC voltage-controlled oscillator (VCO) operating at the 2.4-GHz industrial scientific and medical band and 5.15-GHz unlicensed national information infrastructure band has been demonstrated in an 0.18-/spl mu/m CMOS process. At 1.8-V power supply voltage, the power dissipation is only 5.4mW for a 2.4-GHz band and 8mW for a 5.15-GHz band. The proposed VCO features phase-noise of -135dBc/Hz at 3-MHz offset frequency away from the carrier frequency of 2.74GHz and -126dBc/Hz at 3-MHz offset frequency away from 5.49GHz. The oscillator is tuned from 2.2 to 2.85GHz in the low band (2.4-GHz band) and from 4.4 to 5.7GHz in the high band (5.15-GHz band).

An 8-bit 200-MSample/s Pipelined ADC With Mixed-Mode Front-End S/H Circuit

This paper describes an 8-bit pipelined analog-to-digital converter (ADC) using a mixed-mode sample-and-hold (S/H) circuit at the front-end. The mixed-mode sampling technique reduces signal swings in pipelined ADCs while maintaining the signal-to-noise ratio. The reduction of signal swings relaxes the operational amplifier (opamp) gain, slew rate, bandwidth, and capacitor-matching requirements in pipelined ADCs. Due to the mixed-mode S/H technique, the single-stage opamps and small capacitor sizes can be used in this pipelined ADC, leading to a high speed and low-power consumption. Fabricated in a 0.18-mum CMOS process, the 8-bit pipelined ADC consumes 22 mW with 1.8-V supply voltage. When sampling at 200 MSample/s, the prototype ADC achieves 54-dB spurious free dynamic range and 45-dB signal-to-noise and distortion ratio. The measured integral nonlinearity and differential nonlinearity are 0.34 LSB and 0.3 LSB, respectively.

A 57.9-to-68.3 GHz 24.6 mW Frequency Synthesizer With In-Phase Injection-Coupled QVCO in 65 nm CMOS Technology

A fully integrated 60 GHz frequency synthesizer with an in-phase injection-coupled quadrature voltage-controlled oscillator (IPIC-QVCO) is proposed. Through a particular symmetrical coupling network formed by diode-connected transistors, the in-phase coupling is realized in the IPIC-QVCO, which reduces both phase noise and phase error. A compact inductor-less divider chain is designed to reduce power consumption. A self-correcting low spur charge pump is employed to reduce reference spur. A standalone 60 GHz IPIC-QVCO and a fully integrated PLL are implemented in standard 65 nm low power CMOS technology. The measurement results show that the QVCO covers a frequency range from 57.88 to 68.33 GHz while consuming 11.4 mW power from a 1.2 V supply. The phase noise of the QVCO is -92 ~ -95 dBc/Hz at 1 MHz offset. The FOM and FOM T of the QVCO are -178.1 ~ -179.7 and -182.5 ~ -184.1 dBc/Hz respectively. The tuning range of the frequency synthesizer is from 57.9 to 68.3 GHz, and the power consumption is 24.6 mW. The phase noise of the frequency synthesizer is -89.8 ~ -91.5 dBc/Hz at 1 MHz offset across the frequency band.

16.6- and 28-GHz Fully Integrated CMOS RF Switches With Improved Body Floating

This paper presents two fully integrated CMOS transmit/receive (T/R) switches with improved body-floating operations. The first design exploits an improved transistor layout with asymmetric drain-source region, which reduces the drain-source feed-through for body-floated RF switches. In the second design, a switched body-floating technique is proposed, which reconfigures the body-floating condition of a switch transistor in the ON and OFF states. Both designs are fabricated in a standard 0.13-mum triple-well CMOS process. With regard to 2-dB insertion loss, the switch with asymmetric drain-source achieves 28-GHz bandwidth, which is among the highest reported frequencies for CMOS T/R switches. The bandwidth of the switched body-floating design is 16.6 GHz. There is approximately 5 dB better isolation obtained in the switched body-floating design. With the resistive double-well body-floating technique, 26.5- and 25.5-dBm input 1-dB compression point (P1dB) are obtained, respectively. Both designs consume only 150 mum times 100 mum die area. The demonstrated T/R switches are suitable for high-frequency and wideband transceivers.

A 57.9-to-68.3GHz 24.6mW frequency synthesizer with in-phase injection-coupled QVCO in 65nm CMOS

Under the influence of increasing demand for high-data-rate communication systems such as 60GHz band applications, the requirements of PLLs keep getting higher. In a mm-Wave direct-conversion transceiver, the quadrature LO signal generation is challenging. The conventional techniques to generate quadrature LO signals suffer from many problems. The method of using a divide-by-2 divider after a VCO with double LO frequency is popular in multi-GHz designs, but it is difficult to be realized at mm-Wave frequencies. Employing passive RC complex filters is another way to generate quadrature signals, but high power is required to compensate its loss. The conventional parallel-coupled QVCO seems to be a good choice for mm-Wave application. However, the approach suffers from poor phase noise. This work presents a fully integrated 57.9-to-68.3GHz frequency synthesizer, which employs an in-phase injection-coupled QVCO (IPIC-QVCO) to produce low-phase-noise quadrature signals with low power.