Wei Shuyi

Synchrotron X-ray diffraction study of phenacite at high pressure

We report the results of a natural phenacite from 0 to 30.9 GPa using in situ angle-dispersive X-ray diffraction and a diamond anvil cell at the National Synchrotron Light Source, Brookhaven National Laboratory. Over this pressure range, no phase change or disproportionation has been observed. The isothermal equation of state was determined. The values of V0 , K0 , and K0 refined with a third-order Birch-Murnaghan equation of state are V0 =1116.1 ± 1.2 3 , K0 =223±9 GPa, and K 0 =5.5 ± 0.8. Furthermore, we confirm that the linear compressibilities (β) along a and c directions of phenacite are elastically isotropic (βa =1.50 × 10-3 and βc =1.34 × 10-3 GPa-1). Consequently, it can be concluded that the compressibility of phenacite under high pressures has been accurately constrained.

Experiments and Simulation of electron emission form screen printed nanostructure ZnO film

The Nano-ZnO and nanographite was mixed with other vehicles to form paste. The mixture of nanographite, sintering and anneal treatment process was performed to intentionally improve the electron tunneling and electron emission of screen printed Nano-ZnO film. According to the Fowelr--Nordheim equation, the Matlab simulation programming model was established. Compared the 2D and 3D graphics obtained through the simulation to the curves of the experiments, the direction and shape of the curves is basically similar and confirm the results of experiments.

The screen printed nano-SiC film for field emission

In this paper, the low-cost screen printed method was adopted preparation uniform nano-SiC films on large areas of glass. The reunited nano-SiC was dispersed by ultrasonic before fabricating paste. After fabricating paste, the nano-SiC was further ultrasonic dispersed. The nano-SiC paste was screen printed on glass. Then nano-SiC films was sintered by the furnace controlled artificial intelligence, the anneal test was take to improve the field emission characteristics. The samples of nano-SiC film were micro-analyzed and tested the I-V characteristics. After above experiments and technics, the uniformity and stability of field emission characteristics for nano-SiC film was obtained.