Wei Zhengjun

Analysis of performance and optimum configuration of two-stage semiconductor thermoelectric module

In this paper, the theoretical analysis and simulating calculation were conducted for a basic two-stage semiconductor thermoelectric module, which contains one thermocouple in the second stage and several thermocouples in the first stage. The study focused on the configuration of the two-stage semiconductor thermoelectric cooler, especially investigating the influences of some parameters, such as the current I1 of the first stage, the area A1 of every thermocouple and the number n of thermocouples in the first stage, on the cooling performance of the module. The obtained results of analysis indicate that changing the current I1 of the first stage, the area A1 of thermocouples and the number n of thermocouples in the first stage can improve the cooling performance of the module. These results can be used to optimize the configuration of the two-stage semiconductor thermoelectric module and provide guides for the design and application of thermoelectric cooler.

An autobias control system for the electro—optic modulator used in a quantum key distribution system

In a quantum key distribution system, it is crucial to keep the extinction ratio of the coherent pulses stable. This means that the direct current bias point of the electro—optic modulator (EOM) used for generating coherent pulses must be locked. In this paper, an autobias control system based on a lock-in-amplifier for the EOM is introduced. Its drift information extracting theory and control method are analyzed comprehensively. The long term drift of the extinction ratio of the coherent pulses is measured by a single photon detector, which indicates that the autobias control system is effective for stabilizing the bias point of the EOM.

A new synchronization scheme based on time division multiplexing and wavelength division multiplexing technology for practical quantum key distribution system

Three clock synchronization schemes for a quantum key distribution system are compared experimentally through the outdoor fibre and the interaction physical model of the the clock signal and the the quantum signal in the quantum key distribution system is analysed to propose a new synchronization scheme based on time division multiplexing and wavelength division multiplexing technology to reduce quantum bits error rates under some transmission rate conditions. The proposed synchronization scheme can not only completely eliminate noise photons from the bright background light of the the clock signal, but also suppress the fibre nonlinear crosstalk.

Numerical analysis of In0.53Ga0.47As/InP single photon avalanche diodes

A rigorous theoretical model for In0.53Ga0.47As/InP single photon avalanche diode is utilized to investigate the dependences of single photon quantum efficiency and dark count probability on structure and operation condition. In the model, low field impact ionizations in charge and absorption layers are allowed, while avalanche breakdown can occur only in the multiplication layer. The origin of dark counts is discussed and the results indicate that the dominant mechanism that gives rise to dark counts depends on both device structure and operating condition. When the multiplication layer is thicker than a critical thickness or the temperature is higher than a critical value, generation—recombination in the absorption layer is the dominative mechanism; otherwise band-to-band tunneling in the multiplication layer dominates the dark counts. The thicknesses of charge and multiplication layers greatly affect the dark count and the peak single photon quantum efficiency and increasing the multiplication layer width may reduce the dark count probability and increase the peak single photon quantum efficiency. However, when the multiplication layer width exceeds 1 μm, the peak single photon quantum efficiency increases slowly and it is finally saturated at the quantum efficiency of the single photon avalanche diodes.

Numerical analysis of In(0.53)Ga(0.47)As/InP single photon avalanche diodes

A rigorous theoretical model for In0.53Ga0.47As/InP single photon avalanche diode is utilized to investigate the dependences of single photon quantum efficiency and dark count probability on structure and operation condition. In the model, low field impact ionizations in charge and absorption layers are allowed, while avalanche breakdown can occur only in the multiplication layer. The origin of dark counts is discussed and the results indicate that the dominant mechanism that gives rise to dark counts depends on both device structure and operating condition. When the multiplication layer is thicker than a critical thickness or the temperature is higher than a critical value, generation—recombination in the absorption layer is the dominative mechanism; otherwise band-to-band tunneling in the multiplication layer dominates the dark counts. The thicknesses of charge and multiplication layers greatly affect the dark count and the peak single photon quantum efficiency and increasing the multiplication layer width may reduce the dark count probability and increase the peak single photon quantum efficiency. However, when the multiplication layer width exceeds 1 μm, the peak single photon quantum efficiency increases slowly and it is finally saturated at the quantum efficiency of the single photon avalanche diodes.

The analysis of the integral gated mode single photon detector

This paper critically analyses and simulates the circuit configuration of the integral gated mode single photon detector which is proposed for eliminating the transient spikes problem of conventional gated mode single photon detector. The relationship between the values of the circuit elements and the effect of transient spikes cancellation has been obtained. With particular emphasis, the bias voltage of the avalanche photodiode and the output signal voltage of the integrator have been calculated. The obtained analysis results indicate that the output signal voltage of the integrator only relates to the total quantity of electricity of the avalanche charges by choosing the correct values of the circuit elements and integral time interval. These results can be used to optimize the performance of single photon detectors and provide guides for the design of single photon detectors.