Weiwei Feng

Surface micro-machined high efficient and wideband cavity-backed patch antenna array for 60GHz radios

A wideband V-band cavity-backed circular patch antenna array is designed using a surface micromachining. The antenna array is excited by T-power divider. The T-power divider is designed using rectangular micro-coaxial transmission line. The antenna array with the specified size of 6.1mm×3mm×0.42mm and bandwidth shows around 10.3GHz (56.5~66.2GHz) under the condition of voltage standing wave ratio (VSWR) less than 2, which covers full-band standard of frequency range. Gain of the antenna array is up to 10.7 dBi gain at 61GHz, and the efficiency is 90%.

Design and Characterization of CMOS Transmission Lines in Sub-THz Region

ABSTRACT Microstrip line, coplanar waveguide, ground coplanar waveguide, and two kinds of slow-wave transmission lines (T-Line) are designed and realized based on a 0.13 μm Complementary Metal-Oxide-Semiconductor (CMOS) process. The radiation loss in the sub-THz region is evaluated by E-field distribution and attenuation coefficient versus the dimensions. Characterizations of these T-Lines up to sub-THz region is performed by sub artificial neural network (ANN) based on T-Line models and measurement results. The sub ANN-based model is capable of capturing the frequency-dependent effect of the resistance, inductance, conductance, and capacitance (RLGC) model up to sub-THz region, promising a compact and wideband modeling approach. The effect of dummy-filling on degrade of T-Lines performance in sub-THz region is also analyzed and evaluated by measurement and simulation results. Good agreement is obtained between the simulation, modeling, and measurement results.

Design of a SiGe BiCMOS on-chip slot antenna

This letter presents a 270-GHz on-chip cavity-backed slot antenna fabricated with 0.13-μm SiGe BiCMOS process. The proposed antenna, which consists of two parallel radiating slots at the top layer AM, is excited by a cross-shaped strip line at the second layer LY. The cross-shaped feeding strip line is connected with the CPW structure by via holes from AM to LY layer. The slot antenna is backed with a thin cavity formed by two inner metal layers and vias in between. The cavity prevents radiation from going inside the lossy silicon substrate and enhances the radiation of the slot antenna. The antenna shows a measured impedance bandwidth from 247.4 to 260.5GHz for S11 less than −10dB. The total area of this antenna is 0.46 × 0.48mm2.

Surface Micro-machined high gain cavity-backed patch antenna array for 60GHz radios

A high gain cavity-backed circular patch antenna array is designed by using surface micromachining technology. The antenna array is fed by eight-ways power divider, which is designed by using rectangular micro-coaxial transmission line. The antenna array with the specified size of 18.5mm×9.76mm×0.36mm and bandwidth shows around 6 GHz (59~65GHz) under the condition of voltage standing wave ratio (VSWR) less than 2, which covers China and Australia standard of frequency range. Gain of the antenna array is up to 18.2 dBi gain at 61.5GHz, and the efficiency achieves 85%.