Weng Wah Chow

Theory of laser gain in group‐III nitrides

A many‐body calculation of the nonlinear optical response of bulk group‐III nitrides is presented. For the example of GaN it is shown that the Coulomb effects contribute significantly to the magnitude and spectral extension, as well as the temperature and carrier density dependences of the optical gain and absorption.

Microscopic theory of gain for an InGaN/AlGaN quantum well laser

This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra.

Multi-band Bloch equations and gain spectra of highly excited II-VI semiconductor quantum wells

Quasi-equilibrium excitation dependent optical probe spectra of II-VI semiconductor quantum wells at room temperature are investigated within the framework of multi-band semioonductor Bloch equations. The calculations ---

Carrier correlation effects in a quantum-well semiconductor laser medium

This paper describes the results of a microscopic treatment of carrier-carrier scattering effects in the optical gain and refractive index spectra of a quantum-well semiconductor laser structure. The approach uses the Semiconductor Maxwell Bloch equations to describe the interaction between the carriers and the laser field, in the presence of many-body Coulomb interactions. Coulomb correlation effects are treated at the level of quantum kinetic theory in the Markovian limit. This approach shows the presence of nondiagonal Coulomb correlation contributions, in addition to the familiar diagonal contributions giving rise to polarization dephasing.

Excitation-induced dephasing in semiconductor quantum dots

A quantum kinetic theory is used to compute excitation induced dephasing in semiconductor quantum dots due to the Coulomb interaction with a continuum of states, such as a quantum well or a wetting layer. It is shown that a frequency dependent broadening together with nonlinear resonance shifts are needed for a microscopic explanation of the excitation induced dephasing in such a system, and that excitation induced dephasing for a quantum-dot excitonic resonance is different from quantum-well and bulk excitons.

Influences of unconfined states on the optical properties of quantum-well structures

The population of the unconfined states, with energies above the band edge of the barrier layers, can be significant in some regions of the active volume in high power lasers and amplifiers. This paper analyzes the influences of these states on optical properties, such as gain, refractive index, differential gain, and linewidth enhancement factor, for different quantum-well (QW) structures. Our results show that at high excitation levels, the unconfined band contributions to the real part of the optical susceptibility can be significant, especially in structures with weak quantum confinement potentials. This is in agreement with recent measurements of peak gain and carrier-induced refractive index change versus carrier density, for InGaAs-GaAs QW laser structures.

Gain Spectra of an (InGa)As Single Quantum Well Laser Diode

A new method using the broad spectrum of a 10 fs Ti:sapphire laser is demonstrated for measuring the gain spectra of semiconductor lasers with high and quantitative accuracy. Results are shown for an edge-emitting ridge-waveguide In0.05Ga0.95As single quantum well (SQW) laser. The device is studied from the absorption regime up to the strong gain regime recording both, TE and TM polarizations. The experiments are compared to the predictions of a microscopic model based on the semiconductor Bloch equations including microscopic scattering and dephasing terms. A very good quantitative agreement is obtained.

Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers

The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers.

4-wave mixing for phase-matching free nonlinear optics in quantum cascade structures : LDRD 08-0346 final report.

Optical nonlinearities and quantum coherences have the potential to enable efficient, high-temperature generation of coherent THz radiation. This LDRD proposal involves the exploration of the underlying physics using intersubband transitions in a quantum cascade structure. Success in the device physics aspect will give Sandia the state-of-the-art technology for high-temperature THz quantum cascade lasers. These lasers are useful for imaging and spectroscopy in medicine and national defense. Success may have other far-reaching consequences. Results from the in-depth study of coherences, dephasing and dynamics will eventually impact the fields of quantum computing, optical communication and cryptology, especially if we are successful in demonstrating entangled photons or slow light. An even farther reaching development is if we can show that the QC nanostructure, with its discrete atom-like intersubband resonances, can replace the atom in quantum optics experiments. Having such an artificial atom will greatly improve flexibility and preciseness in experiments, thereby enhancing the discovery of new physics. This is because we will no longer be constrained by what natural can provide. Rather, one will be able to tailor transition energies and optical matrix elements to enhance the physics of interest. This report summarizes a 3-year LDRD program at Sandia National Laboratories exploring opticalmorexa0» nonlinearities in intersubband devices. Experimental and theoretical investigations were made to develop a fundamental understanding of light-matter interaction in a semiconductor system and to explore how this understanding can be used to develop mid-IR to THz emitters and nonclassical light sources.«xa0less

THz quantum cascade lasers for standoff molecule detection.

Remote optical detection of molecules, agents, and energetic materials has many applications to national security interests. Currently there is significant interest in determining under what circumstances THz frequency coverage will aid in a complete sensing package. Sources of coherent THz frequency (i.e. 0.1 to 10 THz) electromagnetic radiation with requisite power levels, frequency agility, compactness and reliability represent the single greatest obstacle in establishing a THz technology base, but recent advances in semiconductor-based quantum cascade lasers (QCLs) offer huge improvements towards the ultimate THz source goals. This project advanced the development of narrow-linewidth THz quantum cascade lasers. We developed theoretical tools to guide the improvement of standard THz quantum cascade lasers, the investigation of nonlinear optics employing infrared QCLs, and the exploration of quantum coherence to improve QCL performance. The latter was aimed especially towards achieving high temperature operation. In addition we developed a computer algorithm capable of shifting the frequencies of an existing THz QCL to a different frequency and invented a new type of laser that may enable room temperature THz generation in a electrically driven solid-state source.