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Dive into the research topics where Wenhan Jiang is active.

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Featured researches published by Wenhan Jiang.


Journal of Modern Optics | 2000

Spatial and temporal characterization of phase fluctuations in non-Kolmogorov atmospheric turbulence

Changhui Rao; Wenhan Jiang; Ning Ling

Abstract Atmospheric turbulence severely limits the performance of ground-based imaging and laser propagation systems. Some observational results, showing atmospheric turbulence which does not obey Kolmogorovs theory, have prompted the study of optical propagation through non-Kolmogorov turbulence. This paper presents a theoretical approach to analyse the spatial and temporal characterizations of phase fluctuations in non-Kolmogorov turbulence. The spatial structure function, the temporal structure function and the temporal power spectrum of phase fluctuations are derived. The generalized coherence length ρ0, the characteristic frequency fR and the characteristic time TR are expressed as functions of the index structure constant along the propagation path and the wind velocity. The long exposure MTF, the short exposure MTF and the imaging Strehl ratio are computed.


Journal of Applied Physics | 2001

Thermal redistribution of photocarriers between bimodal quantum dots

Y. Zhang; Changbao Huang; F. Q. Liu; B. Xu; J. Wu; Y. H. Chen; D.W. Ding; Wenhan Jiang; Xiaoling Ye; Z.G. Wang

We study the photoluminescence (PL) properties of InAs/GaAs self-assembled quantum dots (QDs) by varying excitation power and temperature. Excitation power-dependent PL shows that there exists bimodal size distribution in the QD ensemble. Thermal carrier redistribution between the two branches of dots is observed and investigated in terms of the temperature dependence of their relative PL intensity. Based on a model in which carrier transfer between dots is facilitated by the wetting layer, the experimental results are well explained


Journal of Applied Physics | 2000

Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1−xAs (0⩽x⩽0.3)

Honglin Liu; Xuejuan Wang; J. Wu; B. Xu; Yunrong Wei; Wenhan Jiang; D.W. Ding; Xiaoling Ye; Fucheng Lin; Junji Zhang; J. B. Liang; Z.G. Wang

Optical and structural investigations of InAs quantum dots (QDs) covered by InxGa1-xAs (0 less than or equal to x less than or equal to 0.3) overgrowth layer have been systematically reported. The decrease of strain in the growth direction of InAs quantum dots covered by InGaAs layer instead of GaAs is demonstrated by transmission electron microscopy experiments. In addition, the atomic force microscopy measurement shows that the surface of InAs islands with 3-nm-thick In0.2Ga0.8As becomes flatter. However, the InGaAs islands nucleate on the top of quantum dots during the process of InAs islands covered with In0.3Ga0.7As. The significant redshift of the photoluminescence peak energy and reduction of photoluminescence linewidth of InAs quantum dots covered by InGaAs are observed. The energy gap change of InAs QDs covered by InGaAs could be explained in terms of reducing strain, suppressing compositional mixing, and increasing island height


Optics Express | 2007

Intracavity transverse modes controlled by a genetic algorithm based on Zernike mode coefficients

Ping Yang; Mingwu Ao; Yuan Liu; Bing Xu; Wenhan Jiang

A new adaptive optics (AO) system for controlling the mode profile of a diode-laser-pumped Nd:YAG solid laser has been set up in our laboratory. A 19-element piezoelectric deformable mirror (DM), which is used as the rear mirror of the solid-state laser, is controlled by a genetic algorithm (GA). To improve the system convergence rate, the GA optimizes the first 10 orders of Zernike mode coefficients rather than optimize 19 voltages on the DM. The transform matrix between the 19 voltages and the first 10 orders of Zernike mode coefficients is deduced. Comparative numerical results show that the convergence speed and the correction performance of the AO system based on optimizing Zernike mode coefficients is far better than that of optimizing voltages. Moreover, experimental results showed that this AO system could change TEM(10), TEM(11), and TEM(20) transverse modes into a TEM(00) mode successfully.


Journal of Crystal Growth | 2000

Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots

Huiyun Liu; Xuejuan Wang; Bo Xu; Ding Ding; Wenhan Jiang; Ju Wu; Z.G Wang

We have studied the optical and structural properties of InAs/GaAs QDs covered by InxGa1-xAs (0 less than or equal to x less than or equal to 0.3) layer using transmission electron microscopy, photoluminescence (PL) spectra and atomic force microscopy. We find that the strain reduces in the growth direction of InAs islands covered by InGaAs instead of GaAs layer. Significant redshift of PL peak energy and narrowing of PL linewidth are observed for the InAs QDs covered by 3 nm thick InGaAs layer. In addition, atomic force microscopy measurements indicate that the InGaAs islands will nucleate on top of InAs quantum dots, when 3 nm In0.3Ga0.7As overgrowth layer is deposited. This result can well explain the PL intensify degradation and linewidth increment of quantum dots with a higher In-mole-fraction InGaAs layer. The energy gap change of InAs QDs covered by InGaAs may be explained in terms of reducing strain, suppressing compositional mixing and increasing island height


Journal of Applied Physics | 2000

Anomalous temperature dependence of photoluminescence from InAs quantum dots

Wenhan Jiang; Xiaoling Ye; B. Xu; Huaizhe Xu; D.W. Ding; J. B. Liang; Z.G. Wang

Self-assembled InAs quantum dots are fabricated on a GaAs substrate by molecular beam epitaxy. The dots are covered by several monolayers of In0.2Ga0.8As before a GaAs cap layer and an in situ postgrowth annealing is performed to tune the emission to higher energy. The temperature dependence of photoluminescence from this structure demonstrates a slower redshift rate of the peak position, a gradual broadening of the linewidth and an abnormal enhancement of integrated intensity as the temperature is increased from 15 to 300 K. These phenomena are closely related to the introduction of an InGaAs layer and to the intermixing of In and Ga atoms during annealing. We propose a model to explain the unusual increase in PL intensity, which fits the experimental data well


Applied Optics | 2006

Double-deformable-mirror adaptive optics system for phase compensation

Shijie Hu; Bing Xu; Xuejun Zhang; Jing Hou; Jian Wu; Wenhan Jiang

Two kinds of algorithm for an adaptive optics (AO) system that uses two deformable mirrors (DMs), one with large stroke and the other with high spatial frequency, to correct different aberrations are described. The algorithms are based on modal method and direction-gradient method, respectively. Numerical simulations for the algorithms have been made. The simulation results indicate that the two DMs in the AO system can correct different aberrations with different characteristics, and the closed-loop performance of a double-DM AO system will be almost the same as that of an AO system that uses a single DM with an ideal stroke.


Proceedings of SPIE | 1991

Fitting capability of deformable mirror

Wenhan Jiang; Ning Ling; Xuejun Rao; Fan Shi

Deformable mirror is the key element for adaptive optical wavefront correction. The number of actuators decides the complexity and cost of adaptive optical system. In this paper computer simulations of wavefront error for fitting different Zernike terms by deformable mirror with different number of actuators are presented. The arrangement of actuator and the influence function of mirror are discussed in respect of fitting error. The minimum number of actuators for fitting different Zernike orders of wavefront are given. Some optical experiments of fitting capability have been done with 19 and 37-element deformable mirrors and a Zygo interferometer.


Optics Letters | 1999

Measuring the power-law exponent of an atmospheric turbulence phase power spectrum with a Shack Hartmann wave-front sensor.

Changhui Rao; Wenhan Jiang; Ning Ling

For non-Kolmogorov turbulence we develop a differential angle-of-arrival fluctuation coefficient, which is the ratio between the transverse and longitudinal differential angle-of-arrival variances, and a slope structure-correlation coefficient, which is the ratio between the transverse and longitudinal differences of the slope correlation function and the slope structure function, to measure the power-law exponent of a phase power spectrum with a Shack-Hartmann wave-front sensor: The differential arrival-of-angle fluctuation coefficient and the slope structure-correlation coefficient are both related to power-law exponent beta and are independent of strength parameter rho(0) of the turbulence. We compare the methods developed and use them to evaluate beta in recently completed horizontal atmospheric experiments for 1000-m laser beam propagation.


Optics Express | 2010

Enhancement of the beam quality of non-uniform output slab laser amplifier with a 39-actuator rectangular piezoelectric deformable mirror

Ping Yang; Yu Ning; Xiang Lei; Bing Xu; Xinyang Li; Lizhi Dong; Hu Yan; Wenjing Liu; Wenhan Jiang; Lei Liu; Chao Wang; Xingbo Liang; Xiaojun Tang

We present a slab laser amplifier beam cleanup experimental system based on a 39-actuator rectangular piezoelectric deformable mirror. Rather than use a wave-front sensor to measure distortions in the wave-front and then apply a conjugation wave-front for compensating them, the system uses a Stochastic Parallel Gradient Descent algorithm to maximize the power contained within a far-field designated bucket. Experimental results demonstrate that at the output power of 335W, more than 30% energy concentrates in the 1x diffraction-limited area while the beam quality is enhanced greatly.

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Changhui Rao

Chinese Academy of Sciences

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Ning Ling

Chinese Academy of Sciences

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Yudong Zhang

Chinese Academy of Sciences

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Chunlin Guan

Chinese Academy of Sciences

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Mei Li

Chinese Academy of Sciences

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Xuejun Rao

Chinese Academy of Sciences

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Xinyang Li

Chinese Academy of Sciences

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Xuejun Zhang

Chinese Academy of Sciences

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Xiaoling Ye

Chinese Academy of Sciences

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