Wenqing Liu

Enhancing Magnetic Ordering in Cr-Doped Bi2Se3 Using High-TC Ferrimagnetic Insulator

We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi(2-x)Cr(x)Se(3), via the proximity effect using a high-TC ferrimagnetic insulator Y(3)Fe(5)O(12). The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.

Spin and orbital moments of nanoscale Fe3O4 epitaxial thin film on MgO/GaAs(100)

Nanoscale Fe3O4 epitaxial thin film has been synthesized on MgO/GaAs(100) spintronic heterostructure, and studied with X-ray magnetic circular dichroism. We have observed a total magnetic moment (ml+s) of (3.32 ± 0.1)μB/f.u., retaining 83% of the bulk value. Unquenched orbital moment (ml) of (0.47 ± 0.05)μB/f.u. has been confirmed by carefully applying the sum rule. The results offer direct experimental evidence of the bulk-like total magnetic moment and a large orbital moment in the nanoscale fully epitaxial Fe3O4/MgO/GaAs(100) heterostructure, which is significant for spintronics applications.

Magnetic interactions in BiFe0.5Mn0.5O3 films and BiFeO3/BiMnO3 superlattices

The clear understanding of exchange interactions between magnetic ions in substituted BiFeO3 is the prerequisite for the comprehensive studies on magnetic properties. BiFe0.5Mn0.5O3 films and BiFeO3/BiMnO3 superlattices have been fabricated by pulsed laser deposition on (001) SrTiO3 substrates. Using piezoresponse force microscopy (PFM), the ferroelectricity at room temperature has been inferred from the observation of PFM hysteresis loops and electrical writing of ferroelectric domains for both samples. Spin glass behavior has been observed in both samples by temperature dependent magnetization curves and decay of thermo-remnant magnetization with time. The magnetic ordering has been studied by X-ray magnetic circular dichroism measurements, and Fe-O-Mn interaction has been confirmed to be antiferromagnetic (AF). The observed spin glass in BiFe0.5Mn0.5O3 films has been attributed to cluster spin glass due to Mn-rich ferromagnetic (FM) clusters in AF matrix, while spin glass in BiFeO3/BiMnO3 superlattices is due to competition between AF Fe-O-Fe, AF Fe-O-Mn and FM Mn-O-Mn interactions in the well ordered square lattice with two Fe ions in BiFeO3 layer and two Mn ions in BiMnO3 layer at interfaces.

Magnetic interactions in BiFe 0.5 Mn 0.5 O 3 films and BiFeO 3 /BiMnO 3 superlattices

The clear understanding of exchange interactions between magnetic ions in substituted BiFeO3 is the prerequisite for the comprehensive studies on magnetic properties. BiFe0.5Mn0.5O3 films and BiFeO3/BiMnO3 superlattices have been fabricated by pulsed laser deposition on (001) SrTiO3 substrates. Using piezoresponse force microscopy (PFM), the ferroelectricity at room temperature has been inferred from the observation of PFM hysteresis loops and electrical writing of ferroelectric domains for both samples. Spin glass behavior has been observed in both samples by temperature dependent magnetization curves and decay of thermo-remnant magnetization with time. The magnetic ordering has been studied by X-ray magnetic circular dichroism measurements, and Fe-O-Mn interaction has been confirmed to be antiferromagnetic (AF). The observed spin glass in BiFe0.5Mn0.5O3 films has been attributed to cluster spin glass due to Mn-rich ferromagnetic (FM) clusters in AF matrix, while spin glass in BiFeO3/BiMnO3 superlattices is due to competition between AF Fe-O-Fe, AF Fe-O-Mn and FM Mn-O-Mn interactions in the well ordered square lattice with two Fe ions in BiFeO3 layer and two Mn ions in BiMnO3 layer at interfaces.

High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling

High-mobility (Smx Bi1-x )2 Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 10(19) cm(-3) and the mobility can reach about 7200 cm(2) V(-1) s(-1) with pronounced Shubnikov-de Haas oscillations.

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.

Magnetic doping is the most common method for breaking time-reversal-symmetry surface states of topological insulators (TIs) to realize novel physical phenomena and to create beneficial technological applications. Here we present a study of the magnetic coupling of a prototype magnetic TI, that is, Cr-doped Bi2Se3, in its ultrathin limit which is expected to give rise to quantum anomalous Hall (QAH) effect. The high quality Bi2-xCrxSe3 epitaxial thin film was prepared using molecular beam epitaxy (MBE), characterized with scanning transimission electron microscopy (STEM), electrical magnetotransport, and X-ray magnetic circularly dichroism (XMCD) techniques, and the results were simulated using density functional theory (DFT) with spin-orbit coupling (SOC). We observed a sizable spin moment mspin = (2.05 ± 0.20) μB/Cr and a small and negative orbital moment morb = (-0.05 ± 0.02) μB/Cr of the Bi1.94Cr0.06Se3 thin film at 2.5 K. A remarkable fraction of the (CrBi-CrI)(3+) antiferromagnetic dimer in the Bi2-xCrxSe3 for 0.02 < x < 0.40 was obtained using first-principles simulations, which was neglected in previous studies. The spontaneous coexistence of ferro- and antiferromagnetic Cr defects in Bi2-xCrxSe3 explains our experimental observations and those based on conventional magnetometry which universally report magnetic moments significantly lower than 3 μB/Cr predicted by Hunds rule.

Atomic-Scale Interfacial Magnetism in Fe/Graphene Heterojunction

Successful spin injection into graphene makes it a competitive contender in the race to become a key material for quantum computation, or the spin-operation-based data processing and sensing. Engineering ferromagnetic metal (FM)/graphene heterojunctions is one of the most promising avenues to realise it, however, their interface magnetism remains an open question up to this day. In any proposed FM/graphene spintronic devices, the best opportunity for spin transport could only be achieved where no magnetic dead layer exists at the FM/graphene interface. Here we present a comprehensive study of the epitaxial Fe/graphene interface by means of X-ray magnetic circular dichroism (XMCD) and density functional theory (DFT) calculations. The experiment has been performed using a specially designed FM1/FM2/graphene structure that to a large extent restores the realistic case of the proposed graphene-based transistors. We have quantitatively observed a reduced but still sizable magnetic moments of the epitaxial Fe ML on graphene, which is well resembled by simulations and can be attributed to the strong hybridization between the Fe 3dz2 and the C 2pz orbitals and the sp-orbital-like behavior of the Fe 3d electrons due to the presence of graphene.

X-ray magnetic circular dichroism study of epitaxial magnetite ultrathin film on MgO(100)

The spin and orbital magnetic moments of the Fe3O4 epitaxial ultrathin film synthesized by plasma assisted simultaneous oxidization on MgO(100) have been studied with X-ray magnetic circular dichroism. The ultrathin film retains a rather large total magnetic moment, i.e., (2.73 ± 0.15) μB/f.u., which is ∼70% of that for the bulk-like Fe3O4. A significant unquenched orbital moment up to 0.54 ± 0.05 μB/f.u. was observed, which could come from the symmetry breaking at the Fe3O4/MgO interface. Such sizable orbital moment will add capacities to the Fe3O4-based spintronics devices in the magnetization reversal by the electric field.

Robust Interfacial Exchange Bias and Metal-Insulator Transition Influenced by the LaNiO3 Layer Thickness in La0.7Sr0.3MnO3/LaNiO3 Superlattices

Artificial heterostructures based on LaNiO3 (LNO) have been widely investigated with the aim to realize the insulating antiferromagnetic state of LNO. In this work, we grew [(La0.7Sr0.3MnO3)5-(LaNiO3)n]12 superlattices on (001)-oriented SrTiO3 substrates by pulsed laser deposition and observed an unexpected exchange bias effect in field-cooled hysteresis loops. Through X-ray absorption spectroscopy and magnetic circular dichroism experiments, we found that the charge transfer at the interfacial Mn and Ni ions can induce a localized magnetic moment. A remarkable increase of exchange bias field and a transition from metal to insulator were simultaneously observed upon decreasing the thickness of the LNO layer, indicating the antiferromagnetic insulator state in 2 unit cells LNO ultrathin layers. The robust exchange bias of 745 Oe in the superlattice is caused by an interfacial localized magnetic moment and an antiferromagnetic state in the ultrathin LNO layer, pinning the ferromagnetic La0.7Sr0.3MnO3 layers together. Our results demonstrate that artificial interface engineering is a useful method to realize novel magnetic and transport properties.

Enhancing the Spin–Orbit Coupling in Fe3O4 Epitaxial Thin Films by Interface Engineering

By analyzing the in-plane angular dependence of ferromagnetic resonance linewidth, we show that the Gilbert damping constant in ultrathin Fe3O4 epitaxial films on GaAs substrate can be enhanced by thickness reduction and oxygen vacancies in the interface. At the same time, the uniaxial magnetic anisotropy due to the interface effect becomes significant. Using the element-specific technique of X-ray magnetic circular dichroism, we find that the orbital-to-spin moment ratio increases with decreasing film thickness, in full agreement with the increase in the Gilbert damping obtained for these ultrathin single-crystal films. Combined with the first-principle calculations, the results suggest that the bonding with Fe and Ga or As ions and the ionic distortion near the interface, as well as the FeO defects and oxygen vacancies, may increase the spin-orbit coupling in ultrathin Fe3O4 epitaxial films and in turn provide an enhanced damping.