Wenxin Wang
Chinese Academy of Sciences
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Publication
Featured researches published by Wenxin Wang.
Chinese Physics Letters | 2013
Hudong Chang; Gui-Ming Liu; Bing Sun; Wei Zhao; Wenxin Wang; Honggang Liu
We demonstrate a high performance implant-free n-type In0.7Ga0.3As channel MOSFET with a 4-nm InP barrier layer fabricated on a semi-insulating substrate employing a 10-nm Al2O3 as gate dielectric. The maximum effective channel mobility is 1862 cm(2)/V.s extracted by the split C V method. Devices with 0.8 mu m gate length exhibit a peak extrinsic transconductance of 85mS/mm and a drive current of more than 200mA/mm. A short-circuit current gain cutoff frequency f(T) of 24.5 GHz and a maximum oscillation frequency f(max) of 54 GHz are achieved for the 0.8 mu m gate-length device. The research is helpful to obtain higher performance In0.7Ga0.3As MOSFETs for radio-frequency applications.
Semiconductor Science and Technology | 2004
X.Z. Shang; Wenxin Wang; Shao-Yi Wu; Z G Xing; L.W. Guo; Wanyan Wang; Q. Huang; J.M. Zhou
The effects of indium doping on the optical properties of AlAs/GaAs quantum wells (QWs) and the electrical properties of inverted AlGaAs/GaAs two-dimensional electron gas (2DEG) were investigated. It is found that incorporation of a small amount of In in AlAs layers can decrease the photoluminescence linewidths of AlAs/GaAs QWs drastically and a small amount of In doping in AlGaAs layers can increase significantly the electron mobilities of inverted AlGaAs/GaAs 2DEG at 77 K. All these results demonstrate that In doping can improve the interface roughness because In as a surfactant can enhance the surface migration of Al adatoms during molecular beam epitaxy.
Journal of Crystal Growth | 2001
H.Q. Jia; H. Chen; Wenxin Wang; Weijing Wang; Wei-Guang Li; Q. Huang; Jiunming Zhou
A structure in which a 1000 Angstrom thick AlAs layer is sandwiched between 1000 Angstrom thick GaAs cap layer and 2000 A GaAs buffer layer was subsequently grown by molecular beam epitaxy on the GaAs substrate. The AlAs layer was laterally oxidized in N-2 bubbled H2O vapor ambient at 400 degreesC for 20, 30, 40, 60, and 120 min. It was found that the thermal stability of the mesas is very dependent on the removal rate of volatile products, such as As and As2O3. The removal of volatile products is dependent on the oxidation time and temperature. The Raman spectra presented here proved that the spectra were different from samples, oxidized for different time durations
Chinese Physics Letters | 2016
Qingling Sun; Lu Wang; Yang Jiang; Ziguang Ma; Wenqi Wang; Ling Sun; Wenxin Wang; Haiqiang Jia; Junming Zhou; Hong Chen
The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p—n junction. It is observed directly in experiment that most of the photo-excited carriers in quantum wells with a p—n junction escape from quantum wells and form photocurrent rather than relax to the ground state of the quantum wells. The photo absorption coefficient of multiple quantum wells is also enhanced by a p—n junction. The results pave a novel way for solar cells and photodetectors making use of low-dimensional structure.
Applied Surface Science | 2008
Zhongwei Jiang; Wenxin Wang; Hanchao Gao; Linshen Liu; Hong Chen; Junming Zhou
Journal of Crystal Growth | 2007
Hanchao Gao; Wenxin Wang; Zhongwei Jiang; Linsheng Liu; Junming Zhou; Hong Chen
Applied Physics A | 2011
Lu Wang; Meicheng Li; Wenxin Wang; Haitao Tian; Zhigang Xing; Min Xiong; Liancheng Zhao
Science China-physics Mechanics & Astronomy | 2010
Lu Wang; Meicheng Li; Wenxin Wang; Hanchao Gao; Haitao Tian; Min Xiong; Liancheng Zhao
Science China-physics Mechanics & Astronomy | 2011
Hui Li; Tao He; Longgui Dai; XiaoLi Wang; Wenxin Wang; Hong Chen
Journal of Nanoscience and Nanotechnology | 2010
Lu Wang; Meicheng Li; Min Xiong; Wenxin Wang; Hanchao Gao; Liancheng Zhao