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Dive into the research topics where Wenxiong Zhou is active.

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Featured researches published by Wenxiong Zhou.


ACS Nano | 2016

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

S. W. Zeng; Weiming Lü; Zhen Huang; Z. Q. Liu; Kun Han; K. Gopinadhan; Changjian Li; Rui Guo; Wenxiong Zhou; Haijiao Harsan Ma; Linke Jian; T. Venkatesan; Ariando

Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here, we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO3/SrTiO3 (LAO/STO) interface through ionic liquid-assisted electric field effect. With a change of the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19 380 cm(2)/(V s) are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces, which exhibit quantum phenomena, could be obtained by ionic liquid-assisted field effect.


Scientific Reports | 2016

Controlling Kondo-like Scattering at the SrTiO3-based Interfaces.

Kun Han; N. Palina; S. W. Zeng; Z. Huang; Changjian Li; Wenxiong Zhou; D.-Y. Wan; Lingchao Zhang; Xiao Chi; Rui Guo; J. S. Chen; T. Venkatesan; Andrivo Rusydi; Ariando

The observation of magnetic interaction at the interface between nonmagnetic oxides has attracted much attention in recent years. In this report, we show that the Kondo-like scattering at the SrTiO3-based conducting interface is enhanced by increasing the lattice mismatch and growth oxygen pressure PO2. For the 26-unit-cell LaAlO3/SrTiO3 (LAO/STO) interface with lattice mismatch being 3.0%, the Kondo-like scattering is observed when PO2 is beyond 1 mTorr. By contrast, when the lattice mismatch is reduced to 1.0% at the (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3 (LSAT/STO) interface, the metallic state is always preserved up to PO2 of 100 mTorr. The data from Hall measurement and X-ray absorption near edge structure (XANES) spectroscopy reveal that the larger amount of localized Ti3+ ions are formed at the LAO/STO interface compared to LSAT/STO. Those localized Ti3+ ions with unpaired electrons can be spin-polarized to scatter mobile electrons, responsible for the Kondo-like scattering observed at the LAO/STO interface.


Nano Letters | 2016

The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces

Zhen Huang; Kun Han; S. W. Zeng; M. Motapothula; Albina Y. Borisevich; Saurabh Ghosh; Weiming Lü; Changjian Li; Wenxiong Zhou; Z. Q. Liu; Michael Coey; T. Venkatesan; Ariando

Since the discovery of two-dimensional electron gas (2DEG) at the oxide interface of LaAlO3/SrTiO3 (LAO/STO), improving carrier mobility has become an important issue for device applications. In this paper, by using an alternate polar perovskite insulator (La0.3Sr0.7) (Al0.65Ta0.35)O3 (LSAT) for reducing lattice mismatch from 3.0% to 1.0%, the low-temperature carrier mobility has been increased 30 fold to 35,000 cm(2) V(-1) s(-1). Moreover, two critical thicknesses for the LSAT/STO (001) interface are found, one at 5 unit cells for appearance of the 2DEG and the other at 12 unit cells for a peak in the carrier mobility. By contrast, the conducting (110) and (111) LSAT/STO interfaces only show a single critical thickness of 8 unit cells. This can be explained in terms of polar fluctuation arising from LSAT chemical composition. In addition to lattice mismatch and crystal symmetry at the interface, polar fluctuation arising from composition has been identified as an important variable to be tailored at the oxide interfaces to optimize the 2DEG transport.


Advanced Materials | 2017

Multi‐Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Weiming Lü; Changjian Li; Limei Zheng; Juanxiu Xiao; Weinan Lin; Qiang Li; Xiao Renshaw Wang; Zhen Huang; S. W. Zeng; Kun Han; Wenxiong Zhou; Kaiyang Zeng; J. S. Chen; Ariando; Wenwu Cao; T. Venkatesan

Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric switching offer two promising approaches. OVM in oxide films/heterostructures can exhibit high/low resistive state via conducting filament forming/deforming, while the resistive switching of ferroelectric tunnel junctions (FTJs) arises from barrier height or width variation while ferroelectric polarization reverses between asymmetric electrodes. Here the authors demonstrate a coexistence of OVM and ferroelectric induced resistive switching in a BaTiO3 FTJ by comparing BaTiO3 with SrTiO3 based tunnel junctions. This coexistence results in two distinguishable loops with multi-nonvolatile resistive states. The primary loop originates from the ferroelectric switching. The second loop emerges at a voltage close to the SrTiO3 switching voltage, showing OVM being its origin. BaTiO3 based devices with controlled oxygen vacancies enable us to combine the benefits of both OVM and ferroelectric tunneling to produce multistate nonvolatile memory devices.


ACS Nano | 2017

The Mechanism of Electrolyte Gating on High-Tc Cuprates: the Role of Oxygen Migration and Electrostatics

Lingchao Zhang; S. W. Zeng; Xinmao Yin; Teguh Citra Asmara; Ping Yang; Kun Han; Yu Cao; Wenxiong Zhou; Dongyang Wan; Chi Sin Tang; Andrivo Rusydi; Ariando; T. Venkatesan

Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2, and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controversy about the gating mechanism, and it is therefore vital to reveal the relationship between the role of electrolyte gating and the intrinsic properties of materials. Here, we report entirely different mechanisms of electrolyte gating on two high-Tc cuprates, NdBa2Cu3O7-δ (NBCO) and Pr2-xCexCuO4 (PCCO), with different crystal structures. We show that field-induced oxygen vacancy formation in CuO chains of NBCO plays the dominant role, while it is mainly an electrostatic field effect in the case of PCCO. The possible reason is that NBCO has mobile oxygen in CuO chains, while PCCO does not. Our study helps clarify the controversy relating to the mechanism of electrolyte gating, leading to a better understanding of the role of oxygen electro migration which is very material specific.


Physical Review B | 2017

Giant crystalline anisotropic magnetoresistance in nonmagnetic perovskite oxide heterostructures

H. J. Harsan Ma; Jigang Zhou; M Jang; Y Liu; Sw Zheng; Wenxiong Zhou; Lc Zhang; T. Venkatesan; Yuan Ping Feng; Ariando


Physical Review B | 2016

Electron-soft phonon scattering in n-type SrTiO3

Wenxiong Zhou; Jigang Zhou; Changjian Li; S. W. Zeng; Z. Huang; H. J. Harsan Ma; Kun Han; Zhishiuh Lim; Dongyang Wan; Lc Zhang; T. Venkatesan; Yuan Ping Feng; Ariando


Bulletin of the American Physical Society | 2018

Intertwining ferroelectricity and two-dimensional electron gas at oxide interfaces

Ariando Ariando; Wenxiong Zhou; Haijun Wu; Jun Zhou; T. Venkatesan; J. S. Chen; Yuan Feng; Stephen J. Pennycook


Bulletin of the American Physical Society | 2018

Ferroelectricity-induced interfacial ferromagnetism in non-magnetic heterostructures

Wenxiong Zhou; Haiyan Wang; Tula R. Paudel; Haijun Wu; T. Venkatesan; Stephen J. Pennycook; Evgeny Y. Tsymbal; J. S. Chen; Ariando Ariando


Bulletin of the American Physical Society | 2016

Controlling Kondo Scattering at the Conducting Oxide Interfaces via Lattice Mismatch and Growth Oxygen Pressure

Kun Han; Shengwei Zheng; Zhen Huang; Changjian Li; Wenxiong Zhou; T. Venkatesan; Ariando Ariando

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T. Venkatesan

National University of Singapore

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Kun Han

National University of Singapore

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S. W. Zeng

National University of Singapore

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Ariando

National University of Singapore

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Changjian Li

National University of Singapore

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Ariando Ariando

National University of Singapore

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Zhen Huang

National University of Singapore

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J. S. Chen

National University of Singapore

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Weiming Lü

Harbin Institute of Technology

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Andrivo Rusydi

National University of Singapore

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