Wilfredo Ibarra-Hernández

Investigation of novel crystal structures of Bi–Sb binaries predicted using the minima hopping method

Semi-conducting alloys BixSb1-x have emerged as a potential candidate for topological insulators and are well known for their novel thermoelectric properties. In this work, we present a systematic study of the low-energy phases of 35 different compositions of BixSb1-x (0 < x < 1) at zero temperature and zero pressure. We explore the potential energy surface of BixSb1-x as a function of Sb concentration by using the ab initio minima hopping structural search method. Even though Bi and Sb crystallize in the same R3[combining macron]m space group, our calculations indicate that BixSb1-x alloys can have several other thermodynamically stable crystal structures. In addition to the configurations on the convex hull, we find a large number of metastable structures which are dynamically stable. The electronic band structure calculations of several stable phases reveal the presence of strong spin-orbit interaction leading to the Rashba-Dresselhaus spin-splitting of bands which is of great interest for spintronics applications. We also find an orthorhombic structure of BiSb in the Imm2 space group which exhibits signatures of type-II Weyl semimetal. Additionally, we have studied the thermoelectric properties of the selected structures. Regarding thermoelectric properties, we find that the compositions which crystallize in the rhombohedral structure exhibit values of the Seebeck coefficient and the power factor similar to that of Bi2Te3 at room temperature, while the theoretical maximum figure of merit (ZeT) is smaller than that of Bi2Te3. We observe enhancement in the thermopower with the increase in the strength of the Rashba-Dresselhaus spin-splitting effect.

Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films

The Mn valence in thin film La0.7Sr0.3MnO3 was studied as a function of film thickness in the range of 1–16 unit cells with a combination of non-destructive bulk and surface sensitive X-ray absorption spectroscopy techniques. Using a layer-by-layer valence model, it was found that while the bulk averaged valence hovers around its expected value of 3.3, a significant deviation occurs within several unit cells of the surface and interface. These results were supported by first principles calculations. The surface valence increases to up to Mn3.7+, whereas the interface valence reduces down to Mn2.5+. The change in valence from the expected bulk value is consistent with charge redistribution due to the polar discontinuity at the film-substrate interface. The comparison with theory employed here illustrates how this layer-by-layer valence evolves with film thickness and allows for a deeper understanding of the microscopic mechanisms at play in this effect. These results offer insight on how the two-dimensional electron gas is created in thin film oxide alloys and how the magnetic ordering is reduced with dimensionality.

Isotopic Heft on the B1l Silent Mode in Ultra-Narrow Gallium Nitride Nanowires

Wurtzite semiconductor compounds have two silent modes, B1 l and B1 h. A silent mode is a vibrational mode that carries neither a dipole moment nor Raman polarizability. Thus, they are forbidden in both infrared reflectivity and Raman spectroscopy. Astonishingly, we detected the B1 l mode in high-quality, ultra-narrow GaN nanowires using resonant Raman scattering, although the B1 h was not observed, and there is no immediate explanation for this asymmetric finding. The Raman experiments were performed using several laser lines from 647 to 325 nm; the latter is a wavelength in which Raman becomes resonant. Actually, we observed the B1 l mode only in resonance, indicating that the appearance of this mode is related to Fröhlich electron-phonon interactions; i.e., a dipole moment emerging in the B1 l silent mode may not be present in the B1 h mode. To shed light onto the physical origin of these observations, we performed density functional theory calculations of the lattice dynamics in GaN. We performed a careful analysis of the different physical mechanisms that allow the forbidden mode to appear to explain the physics underlying the nonzero dipole moment in the B1 l mode, and the reason why this dipole moment is not present in the B1 h mode.