William Alan Thompson

Schottky Barrier Probe Tunneling into Superconductors

This paper describes some GaAs probe tunneling experiments which exhibit the usefulness and reliability of this bulk tunneling method. Tunneling characteristics were observed for all superconducting counter‐electrodes, and the measured ratios of superconducting energy gap to transition temperature were in good agreement with measurements by other techniques. Also described are the effects of contact pressure and a novel in situ surface cleaning technique for removing chemically contaminated surface layers.

A NEW METHOD FOR POINT TUNNELING INTO SUPERCONDUCTORS

A novel point tunneling technique for superconductors is reported. This technique employs the intrinsic barrier layer formed between a degenerate GaAs point and the superconducting metal surface. Excellent agreement between theoretical and experimental conductance curves is obtained for polycrystalline lead.