William L. McCardel

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Featured researches published by William L. McCardel.

IEEE Transactions on Electron Devices | 1995

Mark V. Wadsworth; Sebastian R. Borrello; John Dodge; Roland W. Gooch; William L. McCardel; George Nado; Michael Dean Shilhanek

Charge-coupled device (CCD) infrared detector arrays in 5 /spl mu/m cutoff HgCdTe have been demonstrated for low background applications. These fully monolithic 128 by 28 element CCD arrays incorporate time-delay-and-integrate (TDI) detection, serial readout multiplexing, charge-to-voltage conversion and buffer amplification in the HgCdTe detector chip. Operation of these devices at 77 K have produced average detectivity values exceeding 3/spl times/10/sup 13/ cm-Hz/sup 1/2//W for a background flux level of 6/spl times/10/sup 12/ photon/cm/sup 2/-sec in the 3.0 /spl mu/m to 5.5 /spl mu/m spectral band. Overall performance data indicates the monolithic HgCdTe CCD to be a promising alternative to present midwave infrared hybrid focal plane array technology. >

Proceedings of SPIE, the International Society for Optical Engineering | 2005

Athanasios John Syllaios; Miranda J. Ha; William L. McCardel; Thomas R. Schimert

A method is described for the direct measurement of the thermal time constant of microbolometer arrays: The emitted radiation from an array due to time varying Joule heating is monitored by a fast photodetector. Applying a bias voltage pulse to the array the thermal time constant is measured from the time dependence of the emission decay at the end of the pulse. In particular, we have used HgCdTe photodetector and digital signal acquisition and analysis to measure the thermal time constant of uncooled a-Si:H microbolometer 120 x 160 arrays with 50 micron pixels. Measured typical thermal time constant values for such arrays are in the range of 8ms to 10ms.

international electron devices meeting | 1993

Mark V. Wadsworth; Sebastian R. Borrello; John Dodge; Roland W. Gooch; William L. McCardel; George Nado; Michael Dean Shilhanek

Charge-coupled device (CCD) infrared detector arrays in 5 /spl mu/m cutoff HgCdTe have been demonstrated for low background applications. These fully monolithic CCD arrays incorporate time-delay-and-integrate (TDI) detection, serial readout multiplexing, charge-to-voltage conversion and buffer amplification in the HgCdTe detector chip. Performance data indicates the monolithic CCD to be a viable alternative to present hybrid focal plane array technology.<<ETX>>

Archive | 2006