Willy Beinvogl | Researchain

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Featured researches published by Willy Beinvogl.

Archive | 1983

Method of producing structures from double layers of metal silicide and polysilicon on integrated circuit substrates by RIE utilizing SF6 and Cl2

Willy Beinvogl

Archive | 1982

Method of producing polysilicon structure in the 1 μm range on substrates containing integrated semiconductor circuits by plasma etching

Willy Beinvogl; Barbara Hasler

Archive | 1985

Method for manufacturing VLSI MOS-transistor circuits

Willy Beinvogl; Gerhard Dipl.-Phys. Enders; Ernst-Guenter Mohr

Archive | 1984

Method for etching integrated semiconductor circuits containing double layers consisting of polysilicon and metal silicide

Willy Beinvogl; Barbara Hasler

Archive | 1981

Method of producing structures comprised of layers consisting of silicides or silicide-polysilicon by reactive sputter etching

Willy Beinvogl

Archive | 1987

Method for manufacturing insulation separating the active regions of a VLSI CMOS circuit

Willy Beinvogl

Archive | 1988

The Development of a 4 Mbit DRAM

Willy Beinvogl; Erwin Dipl.-Ing. Hopf

Archive | 1983

METHOD OF MAKING LAYER STRUCTURES FROM SILICIDES OR SILICIDES-POLYSILICON BY REACTIVE SPUTTER ETCHING

Willy Beinvogl

Archive | 1981

Process of manufacturing polysilicon structures having 1 micron dimensions on silicon substrates comprising integrated circuits using plasma etching

Willy Beinvogl; Barbara Hasler

Archive | 1984

Process for manufacturing structures comprising metallic silicides, especially silicide-polysilicon, for integrated semiconductor circuits using reactive ion etching

Willy Beinvogl; Barbara Hasler

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Barbara Hasler

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Ernst-Guenter Mohr

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Erwin Dipl.-Ing. Hopf

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Gerhard Dipl.-Phys. Enders

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Archive Network Publication Hotspot Collaboration

Network

Latest external collaboration on country level. Dive into details by clicking on the dots.

Hotspot

Dive into the research topics where Willy Beinvogl is active.

Publication

Featured researches published by Willy Beinvogl.

Method of producing structures from double layers of metal silicide and polysilicon on integrated circuit substrates by RIE utilizing SF6 and Cl2

Method of producing polysilicon structure in the 1 μm range on substrates containing integrated semiconductor circuits by plasma etching

Method for manufacturing VLSI MOS-transistor circuits

Method for etching integrated semiconductor circuits containing double layers consisting of polysilicon and metal silicide

Method of producing structures comprised of layers consisting of silicides or silicide-polysilicon by reactive sputter etching

Method for manufacturing insulation separating the active regions of a VLSI CMOS circuit

The Development of a 4 Mbit DRAM

METHOD OF MAKING LAYER STRUCTURES FROM SILICIDES OR SILICIDES-POLYSILICON BY REACTIVE SPUTTER ETCHING

Process of manufacturing polysilicon structures having 1 micron dimensions on silicon substrates comprising integrated circuits using plasma etching

Process for manufacturing structures comprising metallic silicides, especially silicide-polysilicon, for integrated semiconductor circuits using reactive ion etching

Collaboration

Dive into the Willy Beinvogl's collaboration.