Wim Bogaerts

Grating Couplers for Coupling between Optical Fibers and Nanophotonic Waveguides

Nanophotonic waveguides and components are promising for use in the large-scale integration of photonic circuits. Coupling light between nanophotonic waveguides and a single-mode fiber is an important problem and many different solutions have been proposed and demonstrated in recent years. In this paper, we discuss a grating coupler approach. Grating couplers can be placed anywhere on a circuit and can easily be integrated. We have experimentally demonstrated >30% coupling efficiency with a 1 dB bandwidth of 40 nm on standard wafers. Theoretically, the coupling efficiency can be improved to >90% using an optimized grating design and layer stack. The fabrication of the couplers in silicon-on-insulator and in indium phosphide membranes is also discussed.

Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography

We demonstrate single-mode photonic wires in silicon-on-insulator with propagation loss as low as 2.4 dB/cm, fabricated with deep ultraviolet lithography and dry etching. We have also made compact racetrack and ring resonators functioning as add-drop filters, attaining Q values larger than 3000 and low add-drop crosstalk.

Silicon-on-Insulator Spectral Filters Fabricated With CMOS Technology

We give an overview of recent progress in passive spectral filters and demultiplexers based on silicon-on-insulator photonic wire waveguides: ring resonators, interferometers, arrayed waveguide gratings, and echelle diffraction gratings, all benefit from the high-index contrast possible with silicon photonics. We show how the current generation of devices has improved crosstalk levels, insertion loss, and uniformity due to an improved fabrication process based on 193 nm lithography.

Compact Wavelength-Selective Functions in Silicon-on-Insulator Photonic Wires

We present a number of compact wavelength-selective elements implemented in silicon-on-insulator (SOI) photonic wires. These include arrayed waveguide gratings (AWGs), Mach-Zehnder lattice filters (MZLFs), and ring resonators. The circuits were fabricated with deep UV lithography. We also address the sensitivity of photonic wires to phase noise by selectively broadening the waveguides, and demonstrate this in a compact AWG with -20 dB crosstalk and an insertion loss of 2.2 dB for the center channels

High-efficiency fiber-to-chip grating couplers realized using an advanced CMOS-compatible Silicon-On-Insulator platform

A new generation of Silicon-on-Insulator fiber-to-chip grating couplers which use a silicon overlay to enhance the directionality and thereby the coupling efficiency is presented. Devices are realized on a 200 mm wafer in a CMOS pilot line. The fabricated fiber couplers show a coupling efficiency of -1.6 dB and a 3 dB bandwidth of 80 nm.

Low-loss, low-cross-talk crossings for silicon-on-insulator nanophotonic waveguides

We present compact crossings for silicon-on-insulator photonic wires. The waveguides are broadened using a 3 microm parabolic taper in each arm. By locally applying a lower index contrast using a double-etch technique, loss of confinement is reduced and 97.5% transmission (-1.7 dB) is achieved with only -40 dB cross talk.

Basic structures for photonic integrated circuits in Silicon-on-insulator

For the compact integration of photonic circuits, wavelength-scale structures with a high index contrast are a key requirement. We developed a fabrication process for these nanophotonic structures in Silicon-on-insulator using CMOS processing techniques based on deep UV lithography. We have fabricated both photonic wires and photonic crystal waveguides and show that, with the same fabrication technique, photonic wires have much less propagation loss than photonic crystal waveguides. Measurements show losses of 0.24dB/mm for photonic wires, and 7.5dB/mm for photonic crystal waveguides. To tackle the coupling to fiber, we studied and fabricated vertical fiber couplers with coupling efficiencies of over 21%. In addition, we demonstrate integrated compact spot-size converters with a mode-to-mode coupling efficiency of over 70%.

Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193-nm Optical Lithography

High-index contrast silicon-on-insulator technology enables wavelength-scale compact photonic circuits. We report fabrication of photonic circuits in silicon-on-insulator using complementary metal-oxide-semiconductor processing technology. By switching from advanced optical lithography at 248 to 193 nm, combined with improved dry etching, a substantial improvement in process window, linearity, and proximity effect is achieved. With the developed fabrication process, propagation and bending loss of photonic wires were characterized. Measurements indicate a propagation loss of 2.7 dB/cm for 500-nm photonic wire and an excess bending loss of 0.013 dB/90deg bend of 5-mum radius. Through this paper, we demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits.

Subnanometer Linewidth Uniformity in Silicon Nanophotonic Waveguide Devices Using CMOS Fabrication Technology

We report subnanometer linewidth uniformity in silicon nanophotonics devices fabricated using high-volume CMOS fabrication tools. We use wavelength-selective devices such as ring resonators, Mach-Zehnder interferometers, and arrayed waveguide gratings to assess the device nonuniformity within and between chips. The devices were fabricated using 193 or 248 nm optical lithography and dry etching in silicon-on-insulator wafer technology. Using 193 nm optical lithography, we have achieved a linewidth uniformity of 2 nm (after lithography) and 2.6 nm (after dry etch) over 200 mm wafer. Furthermore, with the developed fabrication process, using wavelength-selective devices, we have demonstrated a linewidth control better than 0.6 nm within chip and better than 2 nm chip-to-chip. The necessity for high-resolution optical lithography is demonstrated by comparing device nonuniformity between the 248 and 193 nm optical lithography processes.

Athermal Silicon-on-insulator ring resonators by overlaying a polymer cladding on narrowed waveguides

Athermal silicon ring resonators are experimentally demonstrated by overlaying a polymer cladding on narrowed silicon wires. The ideal width to achieve athermal condition for the TE mode of 220 nm-height SOI waveguides is found to be around 350 nm. After overlaying a polymer layer, the wavelength temperature dependence of the silicon ring resonator is reduced to less than 5 pm/degrees C, almost eleven times less than that of normal silicon waveguides. The optical loss of a 350-nm bent waveguide (with a radius of 15 microm) is extracted from the ring transmission spectrum. The scattering loss is reduced to an acceptable level of about 50 dB/cm after overlaying a polymer cladding.