Winfield B. Perry

Valence electron binding energies of some silicon compounds from x-ray photoelectron spectroscopy

Abstract X-ray photoelectron spectra in the valence electron region were obtained for gaseous SiH 4 , SiH 3 CH 3 , Si(CH 3 ) 4 , SiH 3 Cl, and SiF 4 . The experimental ionization potentials and relative peak intensities are consistent with extended Huckel theory MO calculations. The data can be rationalized without assuming substantial participation of silicon d orbitals in the bonding of these compounds.

The use of X-ray photoelectron spectroscopy to assess d orbital participation in compounds of silicon and germanium

Abstract Chemical shifts in core binding energies have been determined for analogous gaseous compounds of carbon, silicon and germanium. These data, in conjunction with the atomic charge potential model and both CNDO/2 and electronegativity parameter charges, indicate that the silicon and germanium atoms in these compounds, except for SiH 4 and GeH 4 , have unexpectedly negative charges. The results are consistent with the existence of significant pπ—dπ bonding in these compounds.