Wolfram H. P. Pernice

Harnessing optical forces in integrated photonic circuits

The force exerted by photons is of fundamental importance in light–matter interactions. For example, in free space, optical tweezers have been widely used to manipulate atoms and microscale dielectric particles. This optical force is expected to be greatly enhanced in integrated photonic circuits in which light is highly concentrated at the nanoscale. Harnessing the optical force on a semiconductor chip will allow solid state devices, such as electromechanical systems, to operate under new physical principles. Indeed, recent experiments have elucidated the radiation forces of light in high-finesse optical microcavities, but the large footprint of these devices ultimately prevents scaling down to nanoscale dimensions. Recent theoretical work has predicted that a transverse optical force can be generated and used directly for electromechanical actuation without the need for a high-finesse cavity. However, on-chip exploitation of this force has been a significant challenge, primarily owing to the lack of efficient nanoscale mechanical transducers in the photonics domain. Here we report the direct detection and exploitation of transverse optical forces in an integrated silicon photonic circuit through an embedded nanomechanical resonator. The nanomechanical device, a free-standing waveguide, is driven by the optical force and read out through evanescent coupling of the guided light to the dielectric substrate. This new optical force enables all-optical operation of nanomechanical systems on a CMOS (complementary metal-oxide-semiconductor)-compatible platform, with substantial bandwidth and design flexibility compared to conventional electrical-based schemes.

High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits.

Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics.

Tunable bipolar optical interactions between guided lightwaves

Attractive and repulsive optical forces between coupled photonic waveguides are demonstrated – previously, only attractive forces had been observed. The sign of the force can be controlled by varying the relative phase between the guided modes. This effect could be used in planar light-force devices on a CMOS-compatible platform.

Broadband all-photonic transduction of nanocantilevers

Nanoelectromechanical systems based on cantilevers have consistently set records for sensitivity in measurements of displacement, force and mass over the past decade. Continued progress will require the integration of efficient transduction on a chip so that nanoelectromechanical systems may be operated at higher speeds and sensitivities. Conventional electrical schemes have limited bandwidth, and although optical methods are fast, they are subject to the diffraction limit. Here, we demonstrate the integration of nanocantilevers on a silicon photonic platform with a non-interferometric transduction scheme that avoids the diffraction limit by making use of near-field effects in optomechanical interactions. The use of a non-interferometric method means that a coherent light source is not required, making the monolithic integration of optomechanical systems with on-chip light sources feasible. We further demonstrate optomechanical multiplexing of an array of ten nanocantilevers with a displacement sensitivity of 40 fm Hz(-1/2).

Low-Loss, Silicon Integrated, Aluminum Nitride Photonic Circuits and Their Use for Electro-Optic Signal Processing

Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for optical signal processing and on-chip optical networks. However, silicon is limited to wavelengths above 1.1 μm and does not provide the desired lowest order optical nonlinearity for active signal processing. Here we report the integration of aluminum nitride (AlN) films on silicon substrates to bring active functionalities to chip-scale photonics. Using CMOS-compatible sputtered thin films we fabricate AlN-on-insulator waveguides that exhibit low propagation loss (0.6 dB/cm). Exploiting AlNs inherent Pockels effect we demonstrate electro-optic modulation up to 4.5 Gb/s with very low energy consumption (down to 10 fJ/bit). The ultrawide transparency window of AlN devices also enables high speed modulation at visible wavelengths. Our low cost, wideband, carrier-free photonic circuits hold promise for ultralow power and high-speed signal processing at the microprocessor chip level.

Active Silicon Integrated Nanophotonics: Ferroelectric BaTiO3 Devices

The integration of complex oxides on silicon presents opportunities to extend and enhance silicon technology with novel electronic, magnetic, and photonic properties. Among these materials, barium titanate (BaTiO3) is a particularly strong ferroelectric perovskite oxide with attractive dielectric and electro-optic properties. Here we demonstrate nanophotonic circuits incorporating ferroelectric BaTiO3 thin films on the ubiquitous silicon-on-insulator (SOI) platform. We grow epitaxial, single-crystalline BaTiO3 directly on SOI and engineer integrated waveguide structures that simultaneously confine light and an RF electric field in the BaTiO3 layer. Using on-chip photonic interferometers, we extract a large effective Pockels coefficient of 213 ± 49 pm/V, a value more than six times larger than found in commercial optical modulators based on lithium niobate. The monolithically integrated BaTiO3 optical modulators show modulation bandwidth in the gigahertz regime, which is promising for broadband applications.

Waveguide integrated low noise NbTiN nanowire single-photon detectors with milli-Hz dark count rate

Superconducting nanowire single-photon detectors are an ideal match for integrated quantum photonic circuits due to their high detection efficiency for telecom wavelength photons. Quantum optical technology also requires single-photon detection with low dark count rate and high timing accuracy. Here we present very low noise superconducting nanowire single-photon detectors based on NbTiN thin films patterned directly on top of Si3N4 waveguides. We systematically investigate a large variety of detector designs and characterize their detection noise performance. Milli-Hz dark count rates are demonstrated over the entire operating range of the nanowire detectors which also feature low timing jitter. The ultra-low dark count rate, in combination with the high detection efficiency inherent to our travelling wave detector geometry, gives rise to a measured noise equivalent power at the 10−20 W/Hz1/2 level.

Second harmonic generation in phase matched aluminum nitride waveguides and micro-ring resonators

We demonstrate second order optical nonlinearity in aluminum nitride on insulator substrates. Using sputter-deposited aluminum nitride thin films, we realize nanophotonic waveguides and critically coupled micro-ring resonators that simultaneously support high Q cavity resonant modes for both visible and infrared light. Using phase matched devices, we achieve efficient second-harmonic generation and produce up to 0.55 μW of visible light on the chip with a conversion efficiency of −46 dB with 22 mW input waveguide pump power. From the measured response, we obtain a second order nonlinear susceptibility (χ2) of 4.7 pm/V. Our platform provides a viable route for realizing wideband linear and nonlinear optical devices on a chip.

Diamond-integrated optomechanical circuits

Diamond integrated photonic devices are promising candidates for applications in nanophotonics and optomechanics. Here I present active modulation of diamond-based devices by exploiting mechanical degrees of freedom in free-standing electro-optomechanical resonators.

Theoretical investigation of the transverse optical force between a silicon nanowire waveguide and a substrate

We present a study of transverse optical forces arising in a free-standing silicon nanowire waveguide. A theoretical framework is provided for the calculation of the optical forces existing between a waveguide and a dielectric substrate. The force is evaluated using a numerical procedure based on finite-element simulations. In addition, an analytical formalism is developed which allows for a simple approximate analysis of the problem. We find that in this configuration optical forces on the order of pN can be obtained, sufficient to actuate nano-mechanical devices.