Wolter Siemons

Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping

As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.

Misfit strain accommodation in epitaxial ABO3 perovskites: Lattice rotations and lattice modulations

We present a study of the lattice response to the compressive and tensile biaxial stress in La0.67Sr0.33MnO3 (LSMO) and SrRuO3 (SRO) thinfilms grown on a variety of single-crystal substrates: SrTiO3,DyScO3, NdGaO3, and (La,Sr)(Al,Ta)O3. The results show that, in thin films under misfit strain, both SRO and LSMO lattices, which in bulk form have orthorhombic (SRO) and rhombohedral (LSMO) structures, assume unit cells that are monoclinic under compressive stress and tetragonal under tensile stress. The applied stress effectively modifies the BO6 octahedra rotations, whose degree and direction can be controlled by the magnitude and sign of the misfit strain. Such lattice distortions change the B-O-B bond angles and therefore are expected to affect magnetic and electronic properties of the ABO3 perovskites.

Polar Kerr-effect measurements of the high-temperature YBa2Cu3O6+x superconductor: evidence for broken symmetry near the pseudogap temperature.

The polar Kerr effect in the high-T_(c) superconductor YBa2Cu3O6+x was measured at zero magnetic field with high precision using a cyogenic Sagnac fiber interferometer. We observed nonzero Kerr rotations of order approximately 1 microrad appearing near the pseudogap temperature T(*) and marking what appears to be a true phase transition. Anomalous magnetic behavior in magnetic-field training of the effect suggests that time reversal symmetry is already broken above room temperature.

Universal Ti-rich termination of atomically flat SrTiO3 (001), (110), and (111) surfaces

We have studied the surface termination of atomically flat SrTiO3 surfaces treated by chemical etching and subsequent thermal annealing, for all commercially available orientations (001), (110), and (111). Atomic force microscopy confirms that our treatment processes produce unit cell steps with flat terrace structures. We have also determined the topmost atomic layer of SrTiO3 surfaces through time-of-flight mass spectroscopy. We found that all three orientations exhibit a Ti-rich surface. Our observation opens doors for interface engineering along the [110] and [111] directions in addition to a well known [100] case, which widens the range of functional heterostructures and interfaces.

High-Temperature Magnetic Insulating Phase in Ultrathin La0.67Sr0.33MnO3 Films

We present a study of the thickness dependence of magnetism and electrical conductivity in ultrathin La0.67Sr0.33MnO3 films grown on SrTiO3 (110) substrates. We found a critical thickness of 10 unit cells below which the conductivity of the films disappeared and simultaneously the Curie temperature increased, indicating a magnetic insulating phase at room temperature. These samples have a Curie temperature of about 560 K with a significant saturation magnetization of 1.2±0.2μ(B)/Mn. The canted antiferromagnetic insulating phase in ultra thin films of n<10 coincides with the occurrence of a higher symmetry structural phase with a different oxygen octahedra rotation pattern. Such a strain engineered phase is an interesting candidate for an insulating tunneling barrier in room temperature spin polarized tunneling devices.

Parallel Electron-Hole Bilayer Conductivity from Electronic Interface Reconstruction

The perovskite SrTiO3-LaAlO3 structure has advanced to a model system to investigate the rich electronic phenomena arising at polar oxide interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO3 capping layer prevents atomic reconstruction at the LaAlO3 surface and triggers the electronic reconstruction at a significantly lower LaAlO3 film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.

Critical thickness for itinerant ferromagnetism in ultrathin films of SrRuO3

Ultrathin films of the itinerant ferromagnet

Phase Transitions, Phase Coexistence, and Piezoelectric Switching Behavior in Highly Strained BiFeO 3 Films

{\text{SrRuO}}_{3}

High-temperature thermoelectric response of double-doped SrTiO3 epitaxial films

were studied using the transport and magneto-optic polar Kerr effect. We find that below 4 monolayers, the films become insulating and their magnetic character changes as they loose their simple ferromagnetic behavior. We observe a strong reduction in the magnetic moment which for 3 monolayers and below lies in the plane of the film. Exchange-bias behavior is observed below the critical thickness and may point to induced antiferromagnetism in contact with ferromagnetic regions.

Thermal conductivity as a metric for the crystalline quality of SrTiO3 epitaxial layers

Highly strained BiFeO3 films transition into a true tetragonal state at 430 °C but remain polar to much higher temperatures (∼800 °C). Piezoelectric switching is only possible up to 300 °C, i.e., at temperatures for which strain stabilizes the stripe-like coexistence of multiple polymorphs.