Wonbong Choi
University of North Texas
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Publication
Featured researches published by Wonbong Choi.
Applied Physics Letters | 1999
Wonbong Choi; Deuk Seok Chung; J. H. Kang; Hyun-Sik Kim; Y. W. Jin; In Taek Han; Young Hee Lee; Ju-Hwan Jung; Naesung Lee; Gyeong-Su Park; Jun-Youn Kim
A fully sealed field-emission display 4.5 in. in size has been fabricated using single-wall carbon nanotube (CNT)-organic binders. The fabricated displays were fully scalable at low temperature, below 415 °C, and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1 V/μm and field emission current of 1.5 mA at 3 V/μm (J=90 μA/cm2) were observed. Brightness of 1800 cd/m2 at 3.7 V/μm was observed on the entire area of a 4.5 in. panel from the green phosphor-indium–tin–oxide glass. The fluctuation of the current was found to be about 7% over a 4.5 in. cathode area.
Critical Reviews in Solid State and Materials Sciences | 2010
Wonbong Choi; Indranil Lahiri; Raghunandan Seelaboyina; Yong Soo Kang
Graphene, one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has grabbed appreciable attention due to its exceptional electronic and optoelectronic properties. The reported properties and applications of this two-dimensional form of carbon structure have opened up new opportunities for the future devices and systems. Although graphene is known as one of the best electronic materials, synthesizing single sheet of graphene has been less explored. This review article aims to present an overview of the advancement of research in graphene, in the area of synthesis, properties and applications, such as field emission, sensors, electronics, and energy. Wherever applicable, the limitations of present knowledgebase and future research directions have also been highlighted.
Applied Physics Letters | 2001
Wonbong Choi; Y. W. Jin; Hyun-Sik Kim; S. J. Lee; Min-jae Yun; J. H. Kang; Yongsoo Choi; N. S. Park; Naesung Lee; Jun-Youn Kim
A triode-type field emission display has been fabricated using carbon nanotube emitters. Purified single walled carbon nanotubes were selectively deposited onto a cathode electrode in a triode-type structure by an electrophoresis. Emission current was modulated with gate potentials of 100–300 V. A high brightness of 1000 cd/m2 with uniform emission was obtained at 900 V at the anode and 200 V at the gate. The fluctuation of emission current was found to be less than 5% in a fully sealed field emission display. Selective deposition of carbon nanotubes by electrophoresis shows high feasibility for triode-type field emission displays.
Applied Physics Letters | 2000
Young Chul Choi; Young Min Shin; Young Hee Lee; Byung Soo Lee; Gyeong-Su Park; Wonbong Choi; Naesung Lee; Jong Min Kim
Vertically aligned carbon nanotubes were synthesized on Ni-deposited Si substrates using microwave plasma-enhanced chemical vapor deposition. The grain size of Ni thin films varied with the rf power density during the rf magnetron sputtering process. We found that the diameter, growth rate, and density of carbon nanotubes could be controlled systematically by the grain size of Ni thin films. With decreasing the grain size of Ni thin films, the diameter of the nanotubes decreased, whereas the growth rate and density increased. High-resolution transmission electron microscope images clearly demonstrated synthesized nanotubes to be multiwalled.
Chemical Physics Letters | 1999
Cheol Jin Lee; Dae Woon Kim; Tae Jae Lee; Young Chul Choi; Young Soo Park; Young Hee Lee; Wonbong Choi; Naesung Lee; Gyeong Su Park; Jong Min Kim
Aligned carbon nanotubes have been synthesized on transition metal-coated silicon substrates with C2H2 using thermal chemical vapor deposition. It was found that nanotubes can be mostly vertically aligned on a large area of plain Si substrates when the density of metal domains reaches a certain value. Pretreatment of Co–Ni alloy by HF dipping and etching with NH3 gas prior to the synthesis is crucial for vertical alignment. Steric hindrance between nanotubes at an initial stage of growth forces nanotubes to align vertically. Nanotubes are grown by a catalyst-cap growth mechanism. Applications to field emission displays are demonstrated with emission patterns.
Applied Physics Letters | 2010
Ved Prakash Verma; Santanu Das; Indranil Lahiri; Wonbong Choi
We present the fabrication and electrical characterization of large graphene structure on polyethylene terephthalate (PET) flexible substrate. Graphene film was grown on Cu foil by thermal chemical vapor deposition and transferred to PET by using hot press lamination. The graphene/PET film shows high quality, flexible transparent conductive structure with unique electrical-mechanical properties; ∼88.80% light transmittance and ∼1.1742 kΩ/sq sheet resistance. We demonstrate application of graphene/PET film as flexible and transparent electrode for field emission displays. Our proposed techniques can be tailored for any flexible substrate and large scale production, which could open up exciting device applications in foldable electronics.
ACS Nano | 2013
Zheng Yan; Lulu Ma; Yu Zhu; Indranil Lahiri; Myung Gwan Hahm; Zheng Liu; Shubin Yang; Changsheng Xiang; Wei Lu; Zhiwei Peng; Zhengzong Sun; Carter Kittrell; Jun Lou; Wonbong Choi; Pulickel M. Ajayan; James M. Tour
Graphene was grown directly on porous nickel films, followed by the growth of controlled lengths of vertical carbon nanotube (CNT) forests that seamlessly emanate from the graphene surface. The metal-graphene-CNT structure is used to directly fabricate field-emitter devices and double-layer capacitors. The three-dimensional nanostructured hybrid materials, with better interfacial contacts and volume utilization, can stimulate the development of several energy-efficient technologies.
ACS Nano | 2010
Indranil Lahiri; Sung-Woo Oh; Jun Y. Hwang; Sungjin Cho; Yang-Kook Sun; Rajarshi Banerjee; Wonbong Choi
We present a novel binder-free multiwall carbon nanotube (MWCNT) structure as an anode in Li ion batteries. The interface-controlled MWCNT structure, synthesized through a two-step process of catalyst deposition and chemical vapor deposition (CVD) and directly grown on a copper current collector, showed very high specific capacity, almost three times as that of graphite, excellent rate capability even at a charging/discharging rate of 3 C, and no capacity degradation up to 50 cycles. Significantly enhanced properties of this anode could be related to high Li ion intercalation on the carbon nanotube walls, strong bonding with the substrate, and excellent conductivity.
Applied Physics Letters | 1999
Cheol Jin Lee; Dae Woon Kim; Tae Jae Lee; Young Chul Choi; Young Soo Park; Won Kim; Young Hee Lee; Wonbong Choi; Naesung Lee; Jong Min Kim; Yong Gak Choi; Soo Chang Yu
We have synthesized carbon nanotubes by thermal chemical vapor deposition of C2H2 on transition metal-coated silicon substrates. Multiwalled carbon nanotubes are uniformly synthesized on a large area of the plain Si substrates, different from previously reported porous Si substrates. It is observed that surface modification of transition metals deposited on substrates by either etching with dipping in a HF solution and/or NH3 pretreatment is a crucial step for the nanotube growth prior to the reaction of C2H2 gas. We will demonstrate that the diameters of carbon nanotubes can be controlled by applying the different transition metals.
Nanotechnology | 2004
Wonbong Choi; Eun-ju Bae; Donghun Kang; Soo-doo Chae; Byung-ho Cheong; Ju-hye Ko; Eungmin Lee; Wanjun Park
We discuss the central issues to be addressed for realizing carbon nanotube (CNT) nanoelectronics. We focus on selective growth, electron energy bandgap engineering and device integration. We have introduced a nanotemplate to control the selective growth, length and diameter of CNTs. Vertically aligned CNTs are synthesized for developing a vertical CNT-field effect transistor (FET). The ohmic contact of the CNT/metal interface is formed by rapid thermal annealing. Diameter control, synthesis of Y-shaped CNTs and surface modification of CNTs open up the possibility for energy bandgap modulation. The concepts of an ultra-high density transistor based on the vertical-CNT array and a nonvolatile memory based on the top gate structure with an oxide–nitride–oxide charge trap are also presented. We suggest that the deposited memory film can be used for the quantum dot storage due to the localized electric field created by a nano scale CNT-electron channel.