Wontae Noh

Nanoenergetic materials: boron nanoparticles from the pyrolysis of decaborane and their functionalisation

The surfaces of boron nanoparticles 10-150 nm in diameter, prepared by gas phase pyrolysis of decaborane vapour at 1 atm and 700-900 degrees C, can be halogenated by treatment with Br2 or XeF2; the surface halogenation somewhat increases the onset temperature for the oxidation of the particles under O2.

Mono(cycloheptatrienyl) tantalum chemistry: synthesis and characterization of new tantalum halide, hydride, and alkyl species.

The new tantalum(II) complex (eta (6)-C 7H 8)TaCl 2(PMe 3) 2 ( 1) was synthesized by the reduction of TaCl 5 with n-butyllithium in the presence of PMe 3 and cycloheptatriene. Compound 1 adopts a four-legged piano stool structure in which the tantalum center is bound to a eta (6)-cycloheptatriene ring in addition to two chlorides and two phosphine ligands in a transoid arrangement. Treatment of 1 with methyllithium results in a loss of the equivalents of HCl and formation of the eta (7)-cycloheptatrienyl complex (eta (7)-C 7H 7)TaCl(PMe 3) 2 ( 2), whereas treatment of 1 with sodium or sodium borohydride affords small amounts of the eta (5)-cycloheptadienyl complex (eta (5)-C 7H 9)TaCl 2(PMe 3) 2 ( 3). Compound 2 adopts a three-legged piano stool structure; the eta (7)-C 7H 7 ring is fully aromatic and planar. The molecular structure of 3 is similar to that of 1, except for the eta (5) binding mode of the seven-membered ring. Treatment of the previously described sandwich compound (C 5Me 5)Ta(C 7H 7) with allyl bromide affords the tantalum(V) product (C 5Me 5)Ta(C 7H 7)Br ( 4), which reacts with LiAlH 4 to give the tantalum(V) hydride (C 5Me 5)Ta(C 7H 7)H ( 5). Compound 4 also reacts with alkylating agents to generate the methyl, allyl, and cyclopropyl complexes (C 5Me 5)Ta(C 7H 7)Me ( 6), (C 5Me 5)Ta(C 7H 7)(eta (1)-CH 2CHCH 2) ( 7), and (C 5Me 5)Ta(C 7H 7)(c-C 3H 5) ( 8). Compounds 4- 8 all adopt bent sandwich structures in which the dihedral angle between the two carbocyclic rings is 34.9 degrees for the bromo compound 4, 26.6 degrees for the hydride 5, 33.1 degrees for the methyl compound 6, 34.2 degrees for the allyl compound 7, and 37.5 degrees for the cyclopropyl compound 8. (1)H and (13)C NMR data are reported for the diamagnetic compounds.

Low Temperature CVD of Ru from C6H8Ru(CO) 3

Thin ruthenium films were deposited using chemical vapor deposition from the single-source precursor tricarbonyl(1,3-cyclohexadiene)Ru(0) onto silicon, silicon dioxide and c-plane sapphire substrates in the absence of a carrier gas by thermolysis. Growth rate, resistivity, purity, crystallinity and microstructure were determined. Tricarbonyl(1,3-cyclohexadiene)Ru(0) gave metallic ruthenium films with near bulk resistivities (11-21μΩ-cm), high growth rates (up to 20 nm/min), and nearly featureless microstructures. Nucleation was rapid on all substrates tested. These results suggest that tricarbonyl(1,3-cyclohexadiene)Ru(0) is an excellent, practical precursor to use for practical applications that require depositing thin ruthenium films.

Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O

The growth characteristics of Ta2O5 thin films by atomic layer deposition (ALD) were examined using Ta(NtBu)(NEt2)3 (TBTDET) and Ta(NtBu)(NEt2)2Cp (TBDETCp) as Ta-precursors, where tBu, Et, and Cp represent tert-butyl, ethyl, and cyclopentadienyl groups, respectively, along with water vapor as oxygen source. The grown Ta2O5 films were amorphous with very smooth surface morphology for both the Ta-precursors. The saturated ALD growth rates of Ta2O5 films were 0.77 Å cycle-1 at 250 °C and 0.67 Å cycle-1 at 300 °C using TBTDET and TBDETCp precursors, respectively. The thermal decomposition of the amido ligand (NEt2) limited the ALD process temperature below 275 °C for TBTDET precursor. However, the ALD temperature window could be extended up to 325 °C due to a strong Ta-Cp bond for the TBDETCp precursor. Because of the improved thermal stability of TBDETCp precursor, excellent nonuniformity of ∼2% in 200 mm wafer could be achieved with a step coverage of ∼90% in a deep hole structure (aspect ratio 5:1) which is promising for 3-dimensional architecture to form high density memories. Nonetheless, a rather high concentration (∼7 at. %) of carbon impurities was incorporated into the Ta2O5 film using TBDETCp, which was possibly due to readsorption of dissociated ligands as small organic molecules in the growth of Ta2O5 film by ALD. Despite the presence of high carbon concentration which might be an origin of large leakage current under electric fields, the Ta2O5 film using TBDETCp showed a promising resistive switching performance with an endurance cycle as high as ∼17 500 for resistance switching random access memory application. The optical refractive index of the deposited Ta2O5 films was 2.1-2.2 at 632.8 nm using both the Ta-precursors, and indirect optical band gap was estimated to be ∼4.1 eV for both the cases.