Wu Qingyang
Shenzhen University
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Publication
Featured researches published by Wu Qingyang.
ieee international nanoelectronics conference | 2016
Luo Sheng; He Wei; Zhang Zhun; He Lingxian; Cao Jianmin; Wu Qingyang
Pulse quenching is evaluate at device-level. Simulation results present that unsynchronized flipping time of adjacent pMOS causing by overmuch distance of adjacent pMOS leads to double peak voltage.
Advances in Optoelectronics and Micro/nano-optics | 2010
Hui Bin; Li Jingzhen; Wu Qingyang
Infrared imaging system with high resolution and large depth of focus play an important role in optical remote sensors. In this paper we design a phase mask infrared imaging system with ZEMAX optical software. The phase mask reduces the sensitivity of the infrared imaging system to the change of defocus. The infrared imaging system combines optical coding and image restoration to provide improved imaging performance and large depth of focus.
ieee international conference on integration technology | 2007
Hui Bin; Li Jingzhen; Wu Qingyang; Wen Desheng
In the domain of reconnaissance, remote sensing, etc., people want to get high resolution images. There is a conflict between the resolution and the optical system defocus. In order to acquire high resolution images, some methods are taken to minish the defocus, but these ways affect the cost and weight of the system. In this paper, a novel technology was described for extending the depth of focus of the incoherent optical system; meanwhile this technology does not decrease the resolution of the images. In this technology, the aspheric optical element is used to encode the images as well as the digital signal processing is used to decode the images. It is significant for optical remote sensors to acquire high resolution images under complicated space environment.
ieee international conference on solid state and integrated circuit technology | 2016
Luo Sheng; He Wei; Zhang Zhun; He Lingxiang; Cao Jianmin; Wu Qingyang
A layout technique via pulse quenching is tested in this paper. The limitation of layout technique is found by 3D device experiment. The new requirement of layout technique can be affirmed that layout technique via pulse quenching is more suitable in nMOS under 90nm technology.
Archive | 2017
Wu Qingyang; Zeng Zeng; Li Ling; Zhang Baichun; Li Jingzhen
Archive | 2017
He Wei; He Lingxiang; Zhang Zhun; Luo Sheng; Wu Qingyang
Archive | 2017
Wu Qingyang; Zeng Zeng; Li Ling; Zhang Baichun; Li Jingzhen
Archive | 2017
He Wei; He Lingxiang; Zhang Zhun; Luo Sheng; Wu Qingyang
Archive | 2017
He Wei; He Lingxiang; Zhang Zhun; Luo Sheng; Wu Qingyang
Archive | 2016
Li Jingzhen; Huang Debo; Cai Yi; Lu Xiaowei; Wu Qingyang; Hui Bin; Ai Yuexia